Publications

Found 2112 results
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2020
Zhang, H., H. Li, P. Li, J. Song, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Room-Temperature Continuous-Wave Electrically Driven Semipolar (202̅1) Blue Laser Diodes Heteroepitaxially Grown on a Sapphire Substrate", ACS Photonics, vol. 7, pp. 1662-1666, 2020.
Li, P., H. Zhang, H. Li, M. Iza, Y. Yao, M. S. Wong, N. Palmquist, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition", Opt. Express, vol. 28, pp. 18707–18712, Jun, 2020.
Poliani, E., D. Seidlitz, M. Ries, S. J. Choi, J. S. Speck, A. Hoffmann, and M. R. Wagner, "Strong Near-Field Light–Matter Interaction in Plasmon-Resonant Tip-Enhanced Raman Scattering in Indium Nitride", The Journal of Physical Chemistry C, vol. 124, pp. 28178-28185, 2020.
Poliani, E., D. Seidlitz, M. Ries, S. J. Choi, J. S. Speck, A. Hoffmann, and M. R. Wagner, "Strong Near-Field Light–Matter Interaction in Plasmon-Resonant Tip-Enhanced Raman Scattering in Indium Nitride", The Journal of Physical Chemistry C, vol. 124, pp. 28178-28185, 2020.
Monavarian, M., J. Xu, M. N. Fireman, N. Nookala, F. Wu, B. Bonef, K. S. Qwah, E. C. Young, M. A. Belkin, and J. S. Speck, "Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions", Applied Physics Letters, vol. 116, pp. 201103, 2020.
Zollner, C. J., A. S. Almogbel, Y. Yao, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Superlattice hole injection layers for UV LEDs grown on SiC", Opt. Mater. Express, vol. 10, pp. 2171–2180, Sep, 2020.
Lheureux, G., M. Monavarian, R. Anderson, R. A. Decrescent, J. Bellessa, C. Symonds, J. A. Schuller, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics", Opt. Express, vol. 28, pp. 17934–17943, Jun, 2020.
Lheureux, G., M. Monavarian, R. Anderson, R. A. Decrescent, J. Bellessa, C. Symonds, J. A. Schuller, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics", Opt. Express, vol. 28, pp. 17934–17943, Jun, 2020.
Lheureux, G., M. Monavarian, R. Anderson, R. A. Decrescent, J. Bellessa, C. Symonds, J. A. Schuller, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics", Opt. Express, vol. 28, pp. 17934–17943, Jun, 2020.
Qwah, K. S., M. Monavarian, G. Lheureux, J. Wang, Y.-R. Wu, and J. S. Speck, "Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder", Applied Physics Letters, vol. 117, pp. 022107, 2020.
Marcinkevičius, S., and J. S. Speck, "Ultrafast dynamics of hole self-localization in β-Ga2O3", Applied Physics Letters, vol. 116, pp. 132101, 2020.
Yapparov, R., Y. Chao Chow, C. Lynsky, F. Wu, S. Nakamura, J. S. Speck, and S. Marcinkevičius, "Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells", Journal of Applied Physics, vol. 128, pp. 225703, 2020.
Zhang, Y., A. Mauze, F. Alema, A. Osinsky, T. Itoh, and J. S. Speck, "β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels", Japanese Journal of Applied Physics, vol. 60, pp. 014001, dec, 2020.
2019
Mauze, A., Y. Zhang, and J. Speck, "(010) β-Ga2O3 Metal Oxide Catalyzed Epitaxy (MOCATAXY) growth and Sn doping in plasma-assisted molecular beam epitaxy", 2019 Compound Semiconductor Week (CSW), May, 2019.
Seres, J., E. Seres, C. Serrat, E. C. Young, J. S. Speck, and T. Schumm, "All-solid-state VUV frequency comb at 160 nm using high-harmonic generation in nonlinear femtosecond enhancement cavity", Opt. Express, vol. 27, pp. 6618–6628, Mar, 2019.
Seres, J., E. Seres, C. Serrat, E. C. Young, J. S. Speck, and T. Schumm, "All-solid-state VUV frequency comb at 160 nm using high-harmonic generation in nonlinear femtosecond enhancement cavity", Opt. Express, vol. 27, pp. 6618–6628, Mar, 2019.
Seres, J., E. Seres, C. Serrat, E. C. Young, J. S. Speck, and T. Schumm, "All-solid-state VUV frequency comb at 160 nm using high-harmonic generation in nonlinear femtosecond enhancement cavity", Opt. Express, vol. 27, pp. 6618–6628, Mar, 2019.
Seres, J., E. Seres, C. Serrat, E. C. Young, J. S. Speck, and T. Schumm, "All-solid-state VUV frequency comb at 160 nm using high-harmonic generation in nonlinear femtosecond enhancement cavity", Opt. Express, vol. 27, pp. 6618–6628, Mar, 2019.
Seres, J., E. Seres, C. Serrat, E. C. Young, J. S. Speck, and T. Schumm, "All-solid-state VUV frequency comb at 160 nm using high-harmonic generation in nonlinear femtosecond enhancement cavity", Opt. Express, vol. 27, pp. 6618–6628, Mar, 2019.
Fireman, M. N., and J. S. Speck, "Ammonia Molecular Beam Epitaxy of III‐Nitrides", Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics: John Wiley & Sons Ltd, 2019.
Zhang, Y., A. Mauze, and J. S. Speck, "Anisotropic etching of β-Ga2O3 using hot phosphoric acid", Applied Physics Letters, vol. 115, pp. 013501, 2019.
Feneberg, M., C. Lidig, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, Z. Galazka, and R. Goldhahn, "Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift", APL Materials, vol. 7, pp. 022508, 2019.
Cramer, R. C., E. C. H. Kyle, and J. S. Speck, "Band gap bowing for high In content InAlN films", Journal of Applied Physics, vol. 126, pp. 035703, 2019.
Cramer, R. C., J. English, B. Bonef, and J. S. Speck, "BBr3 as a boron source in plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A, vol. 37, pp. 061502, 2019.
Reilly, C. E., B. Bonef, S. Nakamura, J. S. Speck, S. P. DenBaars, and S. Keller, "Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition", Semiconductor Science and Technology, vol. 34, pp. 125002, oct, 2019.

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