Publications

Found 2112 results
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2010
Raring, J. W., E. M. Hall, M. C. Schmidt, C. Poblenz, B. Li, N. Pfister, D. Kebort, Y-C. Chang, D. F. Feezell, R. Craig, et al., "State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Laser Technology for Defense and Security VI, vol. 7686: International Society for Optics and Photonics, pp. 76860L, 2010.
Nagata, T., O. Bierwagen, M. E. White, M-Y. Tsai, and J. S. Speck, "Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO 2 (101) thin films", Journal of Applied Physics, vol. 107, no. 3: AIP, pp. 033707, 2010.
Linhart, WM., TD. Veal, PDC. King, G. Koblmüller, CS. Gallinat, JS. Speck, and CF. McConville, "Surface, bulk, and interface electronic properties of nonpolar InN", Applied Physics Letters, vol. 97, no. 11: AIP, pp. 112103, 2010.
White, M. E., O. Bierwagen, M-Y. Tsai, and J. S. Speck, "Synthesis and characterization of highly resistive epitaxial indium-doped SnO2", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 051101, 2010.
Baker, T. J., B. A. Haskell, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Technique for the growth of planar semi-polar gallium nitride, 2010.
Metcalfe, G. D., H. Shen, M. Wraback, G. Koblmüller, C. Gallinat, F. Wu, and J. S. Speck, "Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field", Applied Physics Express, vol. 3, pp. 092201, 2010.
Metcalfe, G. D., H. Shen, M. Wraback, G. Koblmüller, C. Gallinat, F. Wu, and J. S. Speck, "Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field", Applied Physics Express, vol. 3, pp. 092201, 2010.
Dasgupta, S., D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others, "T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art f MAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs", Device Research Conference (DRC), 2010: IEEE, pp. 155–156, 2010.
Miller, N., JW. Ager III, HM. Smith III, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, J. Speck, and others, "Thermopower of parallel conducting structures", APS March Meeting Abstracts, 2010.
Miller, N., JW. Ager III, HM. Smith III, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, J. Speck, and others, "Thermopower of parallel conducting structures", APS March Meeting Abstracts, 2010.
DenBaars, S. P., S. Nakamura, and J. S. Speck, Transparent mirrorless light emitting diode, 2010.
DenBaars, S. P., S. Nakamura, and J. S. Speck, Transparent mirrorless light emitting diode, nov # " 11", 2010.
Dasgupta, S., Nidhi, D. F. Brown, F. Wu, S. Keller, J. S. Speck, and U. K. Mishra, "Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth", Applied physics letters, vol. 96, no. 14: AIP, pp. 143504, 2010.
Dasgupta, S., DF. Nidhi, TE. Mates, S. Keller, JS. Speck, and UK. Mishra, "Ultra-low ohmic contacts to N-polar GaN HEMTs by In (Ga) N based source-drain regrowth by Plasma MBE", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 111–114, 2010.
Tsai, M-Y., O. Bierwagen, M. E. White, and J. S. Speck, "β-Ga 2 O 3 growth by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 28, no. 2: AVS, pp. 354–359, 2010.
2009
Suh, I., P. Roblin, Y. Ko, C-K. Yang, A. Malonis, A. Arehart, S. Ringel, C. Poblenz, Y. Pei, J. Speck, et al., "Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source", Microwave Measurement Symposium, 2009 74th ARFTG: IEEE, pp. 1–5, 2009.
Suh, I., P. Roblin, Y. Ko, C-K. Yang, A. Malonis, A. Arehart, S. Ringel, C. Poblenz, Y. Pei, J. Speck, et al., "Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source", Microwave Measurement Symposium, 2009 74th ARFTG: IEEE, pp. 1–5, 2009.
Da Lin, Y-., A. Chakraborty, S. Brinkley, H. Chih Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Characterization of blue-green m-plane InGaN light emitting diodes", Applied Physics Letters, vol. 94, no. 26: AIP, pp. 261108, 2009.
Yang, C-K., P. Roblin, A. Malonis, A. Arehart, S. Ringel, C. Poblenz, Y. Pei, J. Speck, and U. Mishra, "Characterization of traps in AlGaN/GaN HEMTs with a combined large signal network analyzer/deep level optical spectrometer system", Microwave Symposium Digest, 2009. MTT'09. IEEE MTT-S International: IEEE, pp. 1209–1212, 2009.
Garrett, G. A., H. Shen, M. Wraback, A. Tyagi, M. C. Schmidt, J. S. Speck, S. P. DenBaars, and S. Nakamaura, "Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
Garrett, G. A., H. Shen, M. Wraback, A. Tyagi, M. C. Schmidt, J. S. Speck, S. P. DenBaars, and S. Nakamaura, "Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
Garrett, G. A., H. Shen, M. Wraback, A. Tyagi, M. C. Schmidt, J. S. Speck, S. P. DenBaars, and S. Nakamaura, "Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides", Applied physics express, vol. 2, no. 2: IOP Publishing, pp. 021002, 2009.
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides", Applied physics express, vol. 2, no. 2: IOP Publishing, pp. 021002, 2009.
Koehl, WF., MH. Wong, C. Poblenz, B. Swenson, UK. Mishra, JS. Speck, and DD. Awschalom, "Current-induced spin polarization in gallium nitride", Applied Physics Letters, vol. 95, no. 7: AIP, pp. 072110, 2009.

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