Publications

Found 2112 results
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2011
Schmidt, M. C., C. Poblenz, Y-C. Chang, B. Li, M. J. Mondry, J. Iveland, M. R. Krames, R. Craig, J. W. Raring, J. S. Speck, et al., "High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates", Laser Technology for Defense and Security VII, vol. 8039: International Society for Optics and Photonics, pp. 80390D, 2011.
Farrell, RM., DA. Haeger, PS. Hsu, MC. Schmidt, K. Fujito, DF. Feezell, SP. DenBaars, JS. Speck, and S. Nakamura, "High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes", Applied Physics Letters, vol. 99, no. 17: AIP, pp. 171113, 2011.
Farrell, RM., DA. Haeger, PS. Hsu, MC. Schmidt, K. Fujito, DF. Feezell, SP. DenBaars, JS. Speck, and S. Nakamura, "High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes", Applied Physics Letters, vol. 99, no. 17: AIP, pp. 171113, 2011.
Zhao, Y., S. Tanaka, C-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2", Applied physics express, vol. 4, no. 8: IOP Publishing, pp. 082104, 2011.
Rangel, E., E. Matioli, J. S. Speck, C. Weisbuch, and E. Hu, "Impact of the vertical layer structure on the emission directionality of thin-film InGaN photonic crystal LEDs", CLEO: Science and Innovations: Optical Society of America, pp. CMA3, 2011.
Huang, C-Y., Q. Yan, Y. Zhao, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Influence of Mg-doped barriers on semipolar (20 2\= 1) multiple-quantum-well green light-emitting diodes", Applied Physics Letters, vol. 99, no. 14: AIP, pp. 141114, 2011.
Ťapajna, M., SW. Kaun, MH. Wong, F. Gao, T. Palacios, UK. Mishra, JS. Speck, and M. Kuball, "Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 22: AIP, pp. 223501, 2011.
Farrell, R. M., C. J. Neufeld, S. C. Cruz, NG. Young, M. Iza, J. R. Lang, Y-L. Hu, D. Simeonov, N. Singh, E. E. Perl, et al., "InGaN-Based Solar Cells for Ultrahigh Efficiency Multijunction Solar Cell Applications", UC Solar Symposlum, 2011.
Farrell, R. M., C. J. Neufeld, S. C. Cruz, NG. Young, M. Iza, J. R. Lang, Y-L. Hu, D. Simeonov, N. Singh, E. E. Perl, et al., "InGaN-Based Solar Cells for Ultrahigh Efficiency Multijunction Solar Cell Applications", UC Solar Symposlum, 2011.
Toledo, N. G., S. C. Cruz, C. J. Neufeld, J. R. Lang, M. A. Scarpulla, T. Buehl, A. C. Gossard, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Integrated non-III-nitride/III-nitride tandem solar cell", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 265–266, 2011.
Toledo, N. G., S. C. Cruz, C. J. Neufeld, J. R. Lang, M. A. Scarpulla, T. Buehl, A. C. Gossard, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Integrated non-III-nitride/III-nitride tandem solar cell", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 265–266, 2011.
Browne, D., E. Young, and J. Speck, "Investigation of Indium and Impurity Incorporation of InGaN Films on Polar, Nonpolar, and Semipolar GaN Orientations Grown by Ammonia MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Poblenz, C., J. S. Speck, and D. S. Kamber, Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture, 2011.
Lee, C. Hoon, H. San Kim, and J. S. Speck, Light emitting device having a plurality of light emitting cells and method of fabricating the same, 2011.
Lee, C. Hoon, H. San Kim, and J. S. Speck, Light emitting device having a plurality of light emitting cells and method of fabricating the same, 2011.
Hurni, C., P. Burke, J. Lang, B. McSkimming, E. Young, U. Mishra, and J. Speck, "Low temperature p-GaN grown by NH 3-MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Hirai, A., J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for increasing the area of non-polar and semi-polar nitride substrates, 2011.
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Method of controlling stress in group-iii nitride films deposited on substrates, 2011.
Wu, F., A. Tyagi, EC. Young, AE. Romanov, K. Fujito, SP. DenBaars, S. Nakamura, and JS. Speck, "Misfit dislocation formation at heterointerfaces in (Al, In) GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates", Journal of Applied Physics, vol. 109, no. 3: AIP, pp. 033505, 2011.
Hsu, P. Shan, E. Young, A. Romanov, K. Fujito, J. Speck, and S. Nakamura, "Misfit Dislocation Formation in Partially Strain-Relaxed(11-22) Semipolar InGaN", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Hsu, P. Shan, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Misfit dislocation formation via pre-existing threading dislocation glide in (11 2\= 2) semipolar heteroepitaxy", Applied Physics Letters, vol. 99, no. 8: AIP, pp. 081912, 2011.
Haeger, D. A., C. Holder, R. M. Farrell, P. Shan Hsu, K. M. Kelchner, K. Fujito, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 261–262, 2011.
Arehart, AR., AC. Malonis, C. Poblenz, Y. Pei, JS. Speck, UK. Mishra, and SA. Ringel, "Next generation defect characterization in nitride HEMTs", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2242–2244, 2011.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, 2011.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Novel vessel designs and relative placements of the source material and seed crystals with respect to the vessel for the ammonothermal growth of group-iii nitride crystals, 2011.

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