Publications
Found 700 results
Author Title Type [ Year
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, "Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates", Japanese journal of applied physics, vol. 44, no. 3L: IOP Publishing, pp. L405, 2005.
, "Ga adlayer governed surface defect evolution of (0001) GaN films grown by plasma-assisted molecular beam epitaxy", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L906, 2005.
, "High-power AlGaN/GaN HEMTs for Ka-band applications", IEEE Electron Device Letters, vol. 26, no. 11: IEEE, pp. 781–783, 2005.
, "Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN", physica status solidi (a), vol. 202, no. 5: Wiley Online Library, pp. 846–849, 2005.
, "Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts", IEEE electron device letters, vol. 26, no. 5: IEEE, pp. 283–285, 2005.
, "Localized exciton dynamics in nonpolar (11 2\= 0) In x Ga 1- x N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Applied Physics Letters, vol. 86, no. 15: AIP, pp. 151918, 2005.
, "Metalorganic chemical vapor deposition conditions for efficient silicon doping in high Al-composition AlGaN films", Japanese journal of applied physics, vol. 44, no. 10R: IOP Publishing, pp. 7227, 2005.
, "Metalorganic chemical vapor deposition conditions for efficient silicon doping in high Al-composition AlGaN films", Japanese journal of applied physics, vol. 44, no. 10R: IOP Publishing, pp. 7227, 2005.
, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L958, 2005.
, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese Journal of Applied Physics, vol. 44, pp. L958, 2005.
, "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.
, "Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide", Japanese journal of applied physics, vol. 44, no. 4L: IOP Publishing, pp. L502, 2005.
, "Properties of nonpolar a-plane InGaN/ GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN", Applied Physics Letters, vol. 86, no. 3: AIP, pp. 031901, 2005.
, "Properties of nonpolar a-plane InGaN/ GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN", Applied Physics Letters, vol. 86, no. 3: AIP, pp. 031901, 2005.
, "Publisherís Note:ìDopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealingî[Appl. Phys. Lett. 85, 5254 (2004)]", Applied Physics Letters, vol. 86, no. 5: AIP, pp. 5254, 2005.
, "Quantification of Ga surface coverages and their desorption kinetics on GaN (0001) and (000-1) surfaces", physica status solidi (c), vol. 2, no. 7: Wiley Online Library, pp. 2178–2182, 2005.
, "Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr; 0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique", physica status solidi (c), vol. 2, no. 7: WILEY-VCH Verlag, pp. 2700–2703, 2005.
, "Role of inclined threading dislocations in stress relaxation in mismatched layers", Journal of applied physics, vol. 97, no. 10: AIP, pp. 103534, 2005.
, Selected topics in applied physics III-Physics of UV materials and devices and their applications: JAPAN SOC APPLIED PHYSICS KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, 102-0073, JAPAN, 2005.
, Selected topics in applied physics III-Physics of UV materials and devices and their applications: JAPAN SOC APPLIED PHYSICS KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, 102-0073, JAPAN, 2005.
, "Temperature-dependent Radiative Lifetimes of Excitons in Non-polar GaN/AlGaN Quantum Wells", Semiconductor Device Research Symposium, 2005 International: IEEE, pp. 225–226, 2005.
, "Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%", Applied physics letters, vol. 84, no. 15: AIP, pp. 2748–2750, 2004.
, "Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN", Applied physics letters, vol. 85, no. 8: AIP, pp. 1350–1352, 2004.
, "Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing", Applied physics letters, vol. 85, no. 22: AIP, pp. 5254–5256, 2004.
, "Effect of nitridation on polarity, microstructure, and morphology of AlN films", Applied physics letters, vol. 84, no. 6: AIP, pp. 912–914, 2004.