Publications
] , "Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells", Applied Physics Express, vol. 7, no. 2: IOP Publishing, pp. 025503, 2014.
, "Auger effect identified as main cause of efficiency droop in leds", SPIE Newsroom, pp. 1–4, 2014.
, "Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 102, no. 11: AIP, pp. 111603, 2013.
, "Atom probe characterization of an AlN interlayer within HEMT structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition", Bulletin of the American Physical Society, vol. 58: American Physical Society, 2013.
, "Atom Probe Tomography of III-Nitrides Based Semiconducting Devices", Microscopy and Microanalysis, vol. 19, no. S2: Cambridge University Press, pp. 956–957, 2013.
, "Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs", IEEE Electron Device Letters, vol. 33, no. 5: IEEE, pp. 658–660, 2012.
, "Advances in GaN semiconductors for energy efficient solid state lighting", Photonics Conference (IPC), 2012 IEEE: IEEE, pp. 427–428, 2012.
, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, 2012.
, "AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy", physica status solidi (a), vol. 209, no. 1: Wiley Online Library, pp. 216–220, 2012.
, "Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure", Applied Physics Letters, vol. 101, no. 8: AIP, pp. 083505, 2012.
, "Anomalous output conductance in N-polar GaN high electron mobility transistors", IEEE Transactions on Electron Devices, vol. 59, no. 11: IEEE, pp. 2988–2995, 2012.
, "Anti Reflection (AR) Coating for Indium Gallium Nitride (InGaN) Solar Cells", Army Research Laboratory Report, 08/2012.
, "Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 100, no. 8: AIP, pp. 082103, 2012.
, "Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 9: AIP, pp. 091601, 2012.
, "Atom probe tomography of compound semiconductors for photovoltaic and light-emitting device applications", Microscopy Today, vol. 20, no. 3: Cambridge University Press, pp. 18–24, 2012.
, "Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers", Applied Physics Letters, vol. 101, no. 11: AIP, pp. 112102, 2012.
, "Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers", Applied Physics Letters, vol. 101, pp. 112102, 2012.
, "Abnormal Behavior of MOCVD Grown Al x In 1-x N Observed by Various Material Characterizations", 한국재료학회, vol. 17, 10/2011.
, Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group-iii nitride crystals, sep # " 1", 2011.
, "AlGaN-Cladding-Free m -Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers", Applied Physics Express, vol. 4, pp. 092105, 2011.
, "AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-type AlGaN etch stop layers", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 092105, 2011.
, "Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy", physica status solidi (c), vol. 8, no. 5: Wiley Online Library, pp. 1463–1466, 2011.
, "Anomalous output conductance in N-polar GaN-based MIS-HEMTs", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 211–212, 2011.