Publications

Found 1586 results
Author Title Type [ Year(Desc)]
Filters: 3670 is   [Clear All Filters]
2014
Ahmadi, E., R. Shivaraman, F. Wu, S. Wienecke, S. W. Kaun, S. Keller, J. S. Speck, and U. K. Mishra, "Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime", Applied Physics Letters, vol. 104, no. 7: AIP, pp. 072107, 2014.
Von Dollen, P., S. Pimputkar, and J. S. Speck, "Es werde Licht–mit Galliumnitrid: der Nobelpreis für Physik 2014", Angewandte Chemie, vol. 126, no. 51: Wiley Online Library, pp. 14198–14200, 2014.
Woodward, N., R. Enck, C. S. Gallinat, L. E. Rodak, G. D. Metcalfe, J. S. Speck, H. Shen, and M. Wraback, "Evidence of lateral electric fields in c-plane III-V nitrides via terahertz emission", physica status solidi (c), vol. 11, no. 3-4: Wiley Online Library, pp. 686–689, 2014.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition, 2014.
Kaun, S. W., E. Ahmadi, B. Mazumder, F. Wu, E. C. H. Kyle, P. G. Burke, U. K. Mishra, and J. S. Speck, "GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 29, no. 4: IOP Publishing, pp. 045011, 2014.
Okumura, H., B. M. McSkimming, T. Huault, C. Chaix, and J. S. Speck, "Growth diagram of N-face GaN (000 1) grown at high rate by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 104, no. 1: AIP, pp. 012111, 2014.
Imer, B. M., J. S. Speck, S. P. DenBaars, and S. Nakamura, Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD), 2014.
Linez, F., M. Ritt, C. Rauch, L. Kilanski, S. Choi, J. Räisänen, JS. Speck, and F. Tuomisto, "He implantation induced defects in InN", Journal of Physics: Conference Series, vol. 505, no. 1: IOP Publishing, pp. 012012, 2014.
Saito, M., S-ichiro. Kawabata, D. S. Kamber, S. P. DenBaars, J. S. Speck, and S. Nakamura, Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same, 2014.
Kyle, E. C. H., S. W. Kaun, P. G. Burke, F. Wu, Y-R. Wu, and J. S. Speck, "High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy", Journal of applied physics, vol. 115, no. 19: AIP, pp. 193702, 2014.
Marcinkevičius, S., R. Ivanov, Y. Zhao, S. Nakamura, SP. DenBaars, and JS. Speck, "Highly polarized photoluminescence and its dynamics in semipolar (20 2\= 1\=) InGaN/GaN quantum well", Applied Physics Letters, vol. 104, no. 11: AIP, pp. 111113, 2014.
Young, NG., EE. Perl, RM. Farrell, M. Iza, S. Keller, JE. Bowers, S. Nakamura, SP. DenBaars, and JS. Speck, "High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration", Applied Physics Letters, vol. 104, no. 16: AIP, pp. 163902, 2014.
Peretti, J., C. Weisbuch, J. Iveland, M. Piccardo, L. Martinelli, and J. S. Speck, "Identification of Auger effect as the dominant mechanism for efficiency droop of LEDs", Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, vol. 9003: International Society for Optics and Photonics, pp. 90030Z, 2014.
Hardy, M. T., F. Wu, C-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes", IEEE Photonics Technology Letters, vol. 26, no. 1: IEEE, pp. 43–46, 2014.
Hardy, M. T., F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes", IEEE Photonics Technology Letters, vol. 26, pp. 43-46, Jan, 2014.
Pimputkar, S., S. Kawabata, JS. Speck, and S. Nakamura, "Improved growth rates and purity of basic ammonothermal GaN", Journal of Crystal Growth, vol. 403: Elsevier, pp. 7–17, 2014.
Koslow, I. L., C. McTaggart, F. Wu, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Improved performance of long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1- xN buffer layers", Applied Physics Express, vol. 7, no. 3: IOP Publishing, pp. 031003, 2014.
Yang, T-J., J. S. Speck, and Y-R. Wu, "Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model", Gallium Nitride Materials and Devices IX, vol. 8986: International Society for Optics and Photonics, pp. 89861I, 2014.
Yang, T-J., R. Shivaraman, J. S. Speck, and Y-R. Wu, "The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior", Journal of Applied Physics, vol. 116, no. 11: AIP Publishing, pp. 113104, 2014.
Chakraborty, A., K-C. Kim, J. S. Speck, S. P. DenBaars, and U. K. Mishra, In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In) N, 2014.
Watanabe, K., T. Ohsawa, I. Sakaguchi, O. Bierwagen, M. E. White, M-Y. Tsai, R. Takahashi, E. M. Ross, Y. Adachi, J. S. Speck, et al., "Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions", Applied Physics Letters, vol. 104, no. 13: AIP, pp. 132110, 2014.
Von Dollen, P., S. Pimputkar, and J. S. Speck, "Let There Be LightóWith Gallium Nitride: The 2014 Nobel Prize in Physics", Angewandte Chemie International Edition, vol. 53, no. 51: Wiley Online Library, pp. 13978–13980, 2014.
Lee, C. Hoon, J. S. Speck, H. San Kim, J. Jo Kim, S. Han Kim, and J. Ho Lee, Light emitting device for AC power operation, oct # " 21", 2014.
Speck, J. S., A. Tyagi, S. P. DenBaars, and S. Nakamura, Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning, 2014.
Yeluri, R., J. Lu, D. Browne, C. A. Hurni, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers", Device Research Conference (DRC), 2014 72nd Annual: IEEE, pp. 253–254, 2014.

Pages