Publications

Found 1602 results
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2015
Hsu, P. Shan, K. M. Kelchner, R. M. Farrell, D. A. Haeger, H. Ohta, A. Tyagi, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than+/-15 degrees in the c-direction, 2015.
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface, 2015.
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, SP. DenBaars, JS. Speck, and S. Nakamura, "Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts", Journal of Applied Physics, vol. 118, no. 14: AIP Publishing, pp. 145304, 2015.
Galiano, K., D. Gleason, P. Krishna Paul, Z. Zhang, D. Cardwell, B. McSkimming, J. Speck, A. Arehart, S. Ringel, and J. Pelz, "Spatial Localization and Variation in Defect-Related Electron Traps in GaN Materials", Bulletin of the American Physical Society: APS, 2015.
Marcinkevičius, S., K. Gelžinyt\.e, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Spatial variations of optical properties of semipolar InGaN quantum wells", Gallium Nitride Materials and Devices X, vol. 9363: International Society for Optics and Photonics, pp. 93631U, 2015.
Speck, J. S., "Special Issue: Nitride Semiconductors", Phys. Status Solidi A, vol. 212, no. 5: Wiley Online Library, pp. 885–891, 2015.
Kelchner, KM., LY. Kuritzky, S. Nakamura, SP. DenBaars, and JS. Speck, "Stable vicinal step orientations in m-plane GaN", Journal of Crystal Growth, vol. 411: Elsevier, pp. 56–62, 2015.
Efros, A. L., E. Fortunato, C. Felser, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Felser, C., E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Holder, C. O., D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser, sep # " 15", 2015.
Wu, Y-R., C-K. Wu, C-K. Li, D. A. Browne, and J. S. Speck, "Study of percolation transport in the InGaN/AlGaN LEDs with random alloy fluctuation", Conference on Lasers and Electro-Optics/Pacific Rim: Optical Society of America, pp. 25H2_2, 2015.
Zhang, Z., E. Farzana, WY. Sun, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, B. McSkimming, ECH. Kyle, JS. Speck, et al., "Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN", Journal of Applied Physics, vol. 118, no. 15: AIP Publishing, pp. 155701, 2015.
Xue, J., Y. Zhao, S-H. Oh, W. F. Herrington, J. S. Speck, S. P. DenBaars, S. Nakamura, and R. J. Ram, "Thermally enhanced blue light-emitting diode", Applied Physics Letters, vol. 107, no. 12: AIP Publishing, pp. 121109, 2015.
Young, E. C., B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic () AlGaN/GaN buffer layers", Journal of Crystal Growth, vol. 425: North-Holland, pp. 389–392, 2015.
Young, E. C., B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯ 1) AlGaN/GaN buffer layers", Journal of Crystal Growth: Elsevier BV, 2015.
Speck, J., "Unraveling the Efficiency Limits of GaN-Based Emitters and the Surprising Connection to Electron Devices", Meeting Abstracts, no. 23: The Electrochemical Society, pp. 1449–1449, 2015.
Kaun, S. W., F. Wu, J. S. Speck, and others, "β-(Al ${$sub x$}$ Ga ${$sub 1- x$}$)${$sub 2$}$ O ${$sub 3$}$/Ga ${$sub 2$}$ O ${$sub 3$}$(010) heterostructures grown on β-Ga ${$sub 2$}$ O ${$sub 3$}$(010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, vol. 33, no. 4, 2015.
Kaun, S. W., F. Wu, and J. S. Speck, "β-(AlxGa1- x) 2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 33, no. 4: AVS, pp. 041508, 2015.
2014
Hsu, P. Shan, J. J. Weaver, S. P. DenBaars, J. S. Speck S. Speck, and S. Nakamura, (Al, In, B, Ga) N BASED SEMIPOLAR AND NONPOLAR LASER DIODES WITH POLISHED FACETS, 2014.
Da Lin, Y-., H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck, Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes, jun # " 24", 2014.
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations, 2014.
Feneberg, M., C. Lidig, K. Lange, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, and R. Goldhahn, "Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 82–86, 2014.
Hu, Y-L., E. Rind, and J. S. Speck, "Antiphase boundaries and rotation domains in In2O3 (001) films grown on yttria-stabilized zirconia (001)", Journal of Applied Crystallography, vol. 47, no. 1: International Union of Crystallography, pp. 443–448, 2014.
Mazumder, B., X. Liu, R. Yeluri, F. Wu, U. K. Mishra, and J. S. Speck, "Atom probe tomography studies of Al2O3 gate dielectrics on GaN", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 134101, 2014.
Zhao, Y., F. Wu, T. Jui Yang, Y. Renn Wu, S. Nakamura, and J. S. Speck, "Atomic-scale nanofacet structure in semipolar (202̄1̄) and (202̄1) InGaN single quantum wells", Applied Physics Express, vol. 7, 2, 2014.

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