Publications

Found 1586 results
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2011
Feezell, D., J. Speck, S. DenBaars, and S. Nakamura, "Optoelectronic Devices Grown on Nonpolar and Semipolar Free-Standing GaN Substrates", 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011, 01, 2011.
Iso, K., H. Yamada, M. Saito, A. Hirai, S. P. DenBaars, J. S. Speck, and S. Nakamura, Planar nonpolar group iii-nitride films grown on miscut substrates, 2011.
Matioli, E., S. Brinkley, K. M. Kelchner, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, "Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals", Applied Physics Letters, vol. 98, no. 25: AIP, pp. 251112, 2011.
Brinkley, S. E., Y-. Da Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes", Applied Physics Letters, vol. 98, no. 1: AIP, pp. 011110, 2011.
Speck, J. S., "Progress in nonpolar and semipolar GaN materials and devices", Semiconductor Device Research Symposium (ISDRS), 2011 International: IEEE, pp. 1–1, 2011.
Raring, JW., MC. Schmidt, C. Poblenz, Y. Lin, C. Bai, P. Rudy, JS. Speck, SP. DenBaars, and S. Nakamura, "Recent progress in InGaN-based laser diodes fabricated on nonpolar/semipolar substrates", Photonics Conference (PHO), 2011 IEEE: IEEE, pp. 503–504, 2011.
Gao, F., B. Lu, L. Li, S. Kaun, J. S. Speck, C. V. Thompson, and T. Palacios, "Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 22: AIP, pp. 223506, 2011.
Dasgupta, S., DF. Brown, JS. Speck, UK. Mishra, and others, "Scaling behavior and velocity enhancement in self-aligned N-polar GaN/AlGaN HEMTs with maximum fT of 163 GHz", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 141–142, 2011.
Dasgupta, S., D. F. Brown, U. Singisetti, S. Keller, J. S. Speck, U. K. Mishra, and others, "Self-aligned technology for N-polar GaN/Al (Ga) N MIS-HEMTs", IEEE Electron Device Letters, vol. 32, no. 1: IEEE, pp. 33–35, 2011.
Young, E. C., A. E. Romanov, and J. S. Speck, "Semiconductors, dielectrics, and organic materials-061001 Determination of Composition and Lattice Relaxation in Semipolar Ternary (In, Al, Ga) N Strained Layers from Symmetric X-ray Diffraction Measurements", Applied Physics Express, vol. 4, no. 6, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Semiconductors, dielectrics, and organic materials-101001 Temperature Dependent Capacitance-Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82 In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10, 2011.
Chung, R., E. Young, D. Haeger, S. DenBaars, J. Speck, and D. Cohen, "Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Chung, R. B., E. C. Young, D. A. Haeger, S. P. DenBaars, J. S. Speck, and D. A. Cohen, "Semipolar AlN on bulk GaN for UV-C diode lasers", Quantum Electronics and Laser Science Conference: Optical Society of America, pp. JTuB2, 2011.
Tyagi, A., R. M. Farrell, C-Y. Huang, P. Shan Hsu, D. A. Haeger, K. M. Kelchner, H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semipolar iii-nitride laser diodes with etched mirrors, 2011.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Ingeborg Stass: Wiley Online Library, 2011.
Koslow, I., M. Hardy, P-S. Hsu, E. Young, S. Nakamura, J. Speck, and S. DenBaars, "Strain Relaxation in Semipolar Nitrides for Optoelectronic Device Applications", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, U. K. Mishra, S. P. DenBaars, J. S. Speck, and S. Nakamura, STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga, Al, In, B) N LASER DIODES, 2011.
Farrell, R. M., M. T. Hardy, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure for Improving the Mirror Facet Cleaving Yield of (Ga, Al, In, B) N Laser Diodes Grown on Nonpolar or Semipolar (Ga, Al, In, B) N Substrates, 2011.
Hardy, M. T., Y-. Da Lin, H. Ohta, S. P. DenBaars, J. S. Speck, S. Nakamura, and K. M. Kelchner, Superluminescent diodes by crystallographic etching, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10R: IOP Publishing, pp. 101001, 2011.
Roy, T., EX. Zhang, YS. Puzyrev, X. Shen, DM. Fleetwood, RD. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, et al., "Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 20: AIP, pp. 203501, 2011.
Dasgupta, S., J. Lu, F. Wu, S. Keller, JS. Speck, UK. Mishra, and others, "Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic g m of 1105 mS/mm", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 279–280, 2011.
Singisett, U., M. Hoi Wong, J. S. Speck, and U. K. Mishra, "Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm g m and 0.76 Ω-mm R on", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 1–2, 2011.
Toledo, N., C. Neufeld, M. Scarpulla, T. Buehl, S. Cruz, A. Gossard, S. DenBaars, J. Speck, and U. Mishra, "Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Wong, MH., DF. Brown, ML. Schuette, H. Kim, V. Balasubramanian, W. Lu, JS. Speck, and UK. Mishra, "X-band power performance of N-face GaN MIS-HEMTs", Electronics Letters, vol. 47, no. 3: IET Digital Library, pp. 214–215, 2011.

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