Publications

Found 1586 results
Author Title Type [ Year(Asc)]
2012
Zhao, Y., Q. Yan, C-Y. Huang, S-C. Huang, P. Shan Hsu, S. Tanaka, C-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, et al., "Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells", Applied Physics Letters, vol. 100, no. 20: AIP, pp. 201108, 2012.
Farahani, SK. Vasheghani, TD. Veal, AM. Sanchez, O. Bierwagen, ME. White, S. Gorfman, PA. Thomas, JS. Speck, and CF. McConville, "Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO 2 on sapphire", Physical Review B, vol. 86, no. 24: American Physical Society, pp. 245315, 2012.
Zhang, Z., CA. Hurni, AR. Arehart, JS. Speck, and SA. Ringel, "Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 101, no. 15: AIP, pp. 152104, 2012.
Wu, Y-R., C-P. Wang, K-C. Wang, and J. S. Speck, "Influences of Indium Fluctuation to carrier transport and the Current-voltage Turn-on Behavior in the InGaN Quantum Well LEDs", CLEO: Applications and Technology: Optical Society of America, pp. JTh2A–72, 2012.
D'evelyn, M. P., and J. S. Speck, Large Area Nitride Crystal and Method for Making It, 2012.
Baker, T. J., B. A. Haskell, J. S. Speck, and S. Nakamura, Lateral growth method for defect reduction of semipolar nitride films, apr # " 3", 2012.
Baker, T. J., B. A. Haskell, J. S. Speck, and S. Nakamura, Lateral growth method for defect reduction of semipolar nitride films, 2012.
Lee, C. Hoon, J. S. Speck, H. San Kim, J. Jo Kim, S. Han Kim, and J. Ho Lee, Light emitting device for AC power operation, 2012.
Speck, J. S., C. C. A. Weisbuch, and E. de Nazaret Matioli, Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices, jan # " 26", 2012.
Huang, C-Y., S. Nakamura, S. P. DenBaars, and J. S. Speck, Magnesium doping in barriers in multiple quantum well structures of iii-nitride-based light emitting devices, may # " 3", 2012.
Farrell, RM., EC. Young, F. Wu, SP. DenBaars, and JS. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices", Semiconductor Science and Technology, vol. 27, no. 2: IOP Publishing, pp. 024001, 2012.
Schmidt, M. C., K. Choong Kim, H. Sato, S. P. DenBaars, J. S. Speck, and S. Nakamura, Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices, 2012.
Chung, R. B., H. Tse Chen, C-C. Pan, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for fabrication of (al, in, ga) nitride based vertical light emitting diodes with enhanced current spreading of n-type electrode, jun # " 7", 2012.
Sato, H., H. Hirasawa, R. B. Chung, S. P. DenBaars, J. S. Speck, and S. Nakamura, Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes, 2012.
Chung, R. B., C. Han, S. P. DenBaars, J. S. Speck, and S. Nakamura, METHOD FOR REDUCTION OF EFFICIENCY DROOP USING AN (Al, In, Ga) N/Al (x) In (1-x) N SUPERLATTICE ELECTRON BLOCKING LAYER IN NITRIDE BASED LIGHT EMITTING DIODES, jun # " 7", 2012.
Bierwagen, O., and J. S. Speck, "Mg acceptor doping of In2O3 and overcompensation by oxygen vacancies", Applied Physics Letters, vol. 101, no. 10: AIP, pp. 102107, 2012.
Wong, M. Hoi, F. Wu, C. A. Hurni, S. Choi, J. S. Speck, and U. K. Mishra, "Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source", Applied Physics Letters, vol. 100, no. 7: AIP, pp. 072107, 2012.
Lang, J. R., and J. S. Speck, "NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy", Journal of Crystal Growth, vol. 346, no. 1: North-Holland, pp. 50–55, 2012.
Cardwell, DW., AR. Arehart, C. Poblenz, Y. Pei, JS. Speck, UK. Mishra, SA. Ringel, and JP. Pelz, "Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor", Applied Physics Letters, vol. 100, no. 19: AIP, pp. 193507, 2012.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. S. Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, may # " 29", 2012.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, NON-POLAR (Al, B, In, Ga) N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES, 2012.
Choi, S., F. Wu, R. Shivaraman, E. C. Young, and J. S. Speck, "Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 23: AIP, pp. 232102, 2012.
Choi, S-B., S-Y. Bae, D-S. Lee, B. Hyun Kong, H. Koun Cho, J-H. Song, B-J. Ahn, J. F. Keading, S. Nakamura, S. P. DenBaars, et al., "Optical Characterization of Double Peak Behavior in 101Ø1 Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates", Japanese Journal of Applied Physics, vol. 51, no. 5R: IOP Publishing, pp. 052101, 2012.
Hodges, C., N. Killat, SW. Kaun, MH. Wong, F. Gao, T. Palacios, UK. Mishra, JS. Speck, D. Wolverson, and M. Kuball, "Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers", Applied Physics Letters, vol. 100, no. 11: AIP, pp. 112106, 2012.
Matioli, E. de Nazaret, C. C. A. Weisbuch, J. S. Speck, and E. L. Hu, Optoelectronic devices with embedded void structures, 2012.

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