Publications
"Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells", Applied Physics Letters, vol. 100, no. 20: AIP, pp. 201108, 2012.
, "Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO 2 on sapphire", Physical Review B, vol. 86, no. 24: American Physical Society, pp. 245315, 2012.
, "Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 101, no. 15: AIP, pp. 152104, 2012.
, "Influences of Indium Fluctuation to carrier transport and the Current-voltage Turn-on Behavior in the InGaN Quantum Well LEDs", CLEO: Applications and Technology: Optical Society of America, pp. JTh2A–72, 2012.
, , Lateral growth method for defect reduction of semipolar nitride films, apr # " 3", 2012.
, , , Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices, jan # " 26", 2012.
, Magnesium doping in barriers in multiple quantum well structures of iii-nitride-based light emitting devices, may # " 3", 2012.
, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices", Semiconductor Science and Technology, vol. 27, no. 2: IOP Publishing, pp. 024001, 2012.
, , Method for fabrication of (al, in, ga) nitride based vertical light emitting diodes with enhanced current spreading of n-type electrode, jun # " 7", 2012.
, , METHOD FOR REDUCTION OF EFFICIENCY DROOP USING AN (Al, In, Ga) N/Al (x) In (1-x) N SUPERLATTICE ELECTRON BLOCKING LAYER IN NITRIDE BASED LIGHT EMITTING DIODES, jun # " 7", 2012.
, "Mg acceptor doping of In2O3 and overcompensation by oxygen vacancies", Applied Physics Letters, vol. 101, no. 10: AIP, pp. 102107, 2012.
, "Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source", Applied Physics Letters, vol. 100, no. 7: AIP, pp. 072107, 2012.
, "NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy", Journal of Crystal Growth, vol. 346, no. 1: North-Holland, pp. 50–55, 2012.
, "Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor", Applied Physics Letters, vol. 100, no. 19: AIP, pp. 193507, 2012.
, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, may # " 29", 2012.
, , "Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 23: AIP, pp. 232102, 2012.
, "Optical Characterization of Double Peak Behavior in 101Ø1 Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates", Japanese Journal of Applied Physics, vol. 51, no. 5R: IOP Publishing, pp. 052101, 2012.
, "Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers", Applied Physics Letters, vol. 100, no. 11: AIP, pp. 112106, 2012.
, ,