Publications

Found 1586 results
Author Title Type [ Year(Desc)]
2013
Connelly, B., N. Woodward, G. D. Metcalfe, L. E. Rodak, N. C. Das, M. Reed, A. V. Sampath, H. Shen, M. Wraback, R. M. Farrell, et al., "Temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", CLEO: Science and Innovations: Optical Society of America, pp. CTh1M–7, 2013.
Metcalfe, G. D., A. Hirai, E. C. Young, J. S. Speck, H. Shen, and M. Wraback, "Terahertz studies of carrier localization in spontaneously forming polar lateral heterostructures", physica status solidi (RRL)-Rapid Research Letters, vol. 7, no. 11: Wiley Online Library, pp. 993–996, 2013.
Pfaff, N. A., K. M. Kelchner, D. F. Feezell, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolar m-Plane InGaN Light-Emitting Diodes", Applied Physics Express, vol. 6, no. 9: IOP Publishing, pp. 092104, 2013.
Hardy, M. T., F. Wu, P. Shan Hsu, D. A. Haeger, S. Nakamura, J. S. Speck, and S. P. DenBaars, "True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy", Journal of Applied Physics, vol. 114, no. 18: AIP, pp. 183101, 2013.
Pimputkar, S., P. M. Von Dollen, J. S. Speck, and S. Nakamura, Use of alkaline-earth metals to reduce impurity incorporation into a group-iii nitride crystal grown using the ammonothermal method, apr # " 25", 2013.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals, 2013.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals, 2013.
2014
Hsu, P. Shan, J. J. Weaver, S. P. DenBaars, J. S. Speck S. Speck, and S. Nakamura, (Al, In, B, Ga) N BASED SEMIPOLAR AND NONPOLAR LASER DIODES WITH POLISHED FACETS, 2014.
Da Lin, Y-., H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck, Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes, jun # " 24", 2014.
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations, 2014.
Feneberg, M., C. Lidig, K. Lange, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, and R. Goldhahn, "Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 82–86, 2014.
Hu, Y-L., E. Rind, and J. S. Speck, "Antiphase boundaries and rotation domains in In2O3 (001) films grown on yttria-stabilized zirconia (001)", Journal of Applied Crystallography, vol. 47, no. 1: International Union of Crystallography, pp. 443–448, 2014.
Mazumder, B., X. Liu, R. Yeluri, F. Wu, U. K. Mishra, and J. S. Speck, "Atom probe tomography studies of Al2O3 gate dielectrics on GaN", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 134101, 2014.
Zhao, Y., F. Wu, T. Jui Yang, Y. Renn Wu, S. Nakamura, and J. S. Speck, "Atomic-scale nanofacet structure in semipolar (202̄1̄) and (202̄1) InGaN single quantum wells", Applied Physics Express, vol. 7, 2, 2014.
Zhao, Y., F. Wu, T-J. Yang, Y-R. Wu, S. Nakamura, and J. S. Speck, "Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells", Applied Physics Express, vol. 7, no. 2: IOP Publishing, pp. 025503, 2014.
Iveland, J., J. Speck, L. Martinelli, J. Peretti, and C. Weisbuch, "Auger effect identified as main cause of efficiency droop in leds", SPIE Newsroom, pp. 1–4, 2014.
Marcinkevičius, S., K. Gelžinyt\.e, Y. Zhao, S. Nakamura, SP. DenBaars, and JS. Speck, "Carrier redistribution between different potential sites in semipolar (20 2\= 1) InGaN quantum wells studied by near-field photoluminescence", Applied Physics Letters, vol. 105, no. 11: AIP Publishing, pp. 111108, 2014.
Korhonen, E., F. Tuomisto, O. Bierwagen, JS. Speck, and Z. Galazka, "Compensating vacancy defects in Sn-and Mg-doped In 2 O 3", Physical Review B, vol. 90, no. 24: American Physical Society, pp. 245307, 2014.
Ahmadi, E., H. Chalabi, S. W. Kaun, R. Shivaraman, J. S. Speck, and U. K. Mishra, "Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 133702, 2014.
Sasikumar, A., AR. Arehart, SW. Kaun, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, and SA. Ringel, "Defects in GaN based transistors", Gallium Nitride Materials and Devices IX, vol. 8986: International Society for Optics and Photonics, pp. 89861C, 2014.
Piccardo, M., L. Martinelli, J. Iveland, N. Young, S. P. DenBaars, S. Nakamura, J. S. Speck, C. Weisbuch, and J. Peretti, "Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy", Physical Review B, vol. 89, no. 23: APS, pp. 235124, 2014.
Zhang, Z., C. M. Jackson, A. R. Arehart, B. McSkimming, J. S. Speck, and S. A. Ringel, "Direct Determination of Energy Band Alignments of Ni/Al 2 O 3/GaN MOS Structures Using Internal Photoemission Spectroscopy", Journal of electronic materials, vol. 43, no. 4: Springer US, pp. 828–832, 2014.
Craven, M. D., S. P. DenBaars, J. S. Speck, and S. Nakamura, Dislocation reduction in non-polar III-nitride thin films, 2014.
Mogilatenko, A., H. Kirmse, O. Bierwagen, M. Schmidbauer, M-Y. Tsai, I. Häusler, M. E. White, and J. S. Speck, "Effect of heavy Ga doping on defect structure of SnO2 layers", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 87–92, 2014.
Giddings, AD., TJ. Prosa, A. Merkulov, FA. Stevie, HG. Francois-Saint-Cyr, NG. Young, JS. Speck, and DJ. Larson, "Elemental Quantification and Visualization of GaN Structures using APT and SIMS", Microscopy and Microanalysis, vol. 20, no. S3: Cambridge University Press, pp. 2112–2113, 2014.

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