Publications
] , "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy", Applied Physics Letters, vol. 94, no. 12: AIP, pp. 121906, 2009.
, "Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding", Applied physics express, vol. 2, no. 7: IOP Publishing, pp. 071003, 2009.
, "Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In) GaN epitaxial layers grown on semipolar (11 2\= 2) GaN free standing substrates", Applied Physics Letters, vol. 95, no. 25: AIP, pp. 251905, 2009.
, "Spontaneous formation of ${$1 1Ø 0 1$}$ InGaN quantum wells on a (1 1 2Ø 2) GaN template and their electroluminescence characteristics", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015003, 2009.
, "Ammonothermal growth of bulk GaN", Journal of Crystal Growth, vol. 310, no. 17: Elsevier, pp. 3907–3910, 2008.
, "Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN", Japanese Journal of Applied Physics, vol. 47, no. 7R: IOP Publishing, pp. 5429, 2008.
, "Dislocation reduction in AlGaN/GaN heterostructures on 4H-SiC by molecular beam epitaxy in the thermal decomposition regime", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061103, 2008.
, "Enhanced terahertz radiation from high stacking fault density nonpolar GaN", Applied Physics Letters, vol. 92, no. 24: AIP, pp. 241106, 2008.
, "Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 104, no. 2: AIP, pp. 024301, 2008.
, "Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)", physica status solidi (a), vol. 205, no. 7: WILEY-VCH Verlag, pp. 1705–1712, 2008.
, "Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth", Applied Physics Letters, vol. 93, no. 14: AIP, pp. 142108, 2008.
, "Optical properties of yellow light-emitting diodes grown on semipolar (11 2 2) bulk GaN substrates", Applied Physics Letters, vol. 92, no. 22: AIP, pp. 221110, 2008.
, "Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093710, 2008.
, "Status and perspectives of the ammonothermal growth of GaN substrates", Journal of Crystal Growth, vol. 310, no. 5: Elsevier, pp. 876–880, 2008.
, "Study of interface barrier of SiN x/GaN interface for nitrogen-polar GaN based high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 12: AIP, pp. 124508, 2008.
, "A GaN bulk crystal with improved structural quality grown by the ammonothermal method", Nature materials, vol. 6, no. 8: Nature Publishing Group, pp. 568, 2007.
, "Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)", Journal of Crystal Growth, vol. 306, no. 2: Elsevier, pp. 330–338, 2007.
, "Growth of bulk GaN crystals by the basic ammonothermal method", Japanese Journal of Applied Physics, vol. 46, no. 10L: IOP Publishing, pp. L889, 2007.
, "Growth of bulk GaN with low dislocation density by the ammonothermal method using polycrystalline GaN nutrient", Japanese journal of applied physics, vol. 46, no. 6L: IOP Publishing, pp. L525, 2007.
, "High power and high efficiency blue light emitting diode on freestanding semipolar (10 1 1) bulk GaN substrate", Applied physics letters, vol. 90, no. 23: AIP, pp. 233504, 2007.
, "Impact of $$\backslash$hbox ${$CF$}$ _ ${$4$}$ $ Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9: IEEE, pp. 781–783, 2007.
, "Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 3: Wiley Online Library, pp. 125–127, 2007.
, "Seeded growth of GaN by the basic ammonothermal method", Journal of crystal growth, vol. 305, no. 2: Elsevier, pp. 311–316, 2007.