Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In) GaN epitaxial layers grown on semipolar (11 2\= 2) GaN free standing substrates

TitlePartial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In) GaN epitaxial layers grown on semipolar (11 2\= 2) GaN free standing substrates
Publication TypeJournal Article
Year of Publication2009
AuthorsTyagi, A., F. Wu, E. C. Young, A. Chakraborty, H. Ohta, R. Bhat, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck
JournalApplied Physics Letters
Volume95
Pagination251905