Publications

Found 17 results
Author Title Type [ Year(Asc)]
Filters: Author is Wu, Feng and First Letter Of Title is G  [Clear All Filters]
2017
Oshima, Y., E. Ahmadi, S. Kaun, F. Wu, and J. S. Speck, "Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 33, no. 1: IOP Publishing, pp. 015013, 2017.
2014
Kaun, S. W., E. Ahmadi, B. Mazumder, F. Wu, E. C. H. Kyle, P. G. Burke, U. K. Mishra, and J. S. Speck, "GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 29, no. 4: IOP Publishing, pp. 045011, 2014.
2013
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (2021) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, no. 6: IOP Publishing, pp. 062102, 2013.
2012
Dasgupta, S., F. Wu, J. S. Speck, U. K. Mishra, and others, "Growth and Characterization of N-Polar GaN Films on Si (111) by Plasma Assisted Molecular Beam Epitaxy", Japanese Journal of Applied Physics, vol. 51, no. 11R: IOP Publishing, pp. 115503, 2012.
2011
Keller, S., Y. Dora, S. Chowdhury, F. Wu, X. Chen, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2086–2088, 2011.
Dasgupta, S., S. Choi, F. Wu, J. S. Speck, U. K. Mishra, and others, "Growth, structural, and electrical characterizations of N-polar InAlN by plasma-assisted molecular beam epitaxy", Applied physics express, vol. 4, no. 4: IOP Publishing, pp. 045502, 2011.
Chung, R. B., F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Growth study and impurity characterization of AlxIn1- xN grown by metal organic chemical vapor deposition", Journal of Crystal Growth, vol. 324, no. 1: North-Holland, pp. 163–167, 2011.
2009
Matioli, E., M. Iza, Y-S. Choi, F. Wu, S. Keller, H. Masui, E. Hu, J. Speck, and C. Weisbuch, "GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
Matioli, E., S. Keller, F. Wu, Y-S. Choi, E. Hu, J. Speck, and C. Weisbuch, "Growth of embedded photonic crystals for GaN-based optoelectronic devices", Journal of Applied Physics, vol. 106, no. 2: AIP, pp. 024309, 2009.
2008
Brown, D. F., S. Keller, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 104, no. 2: AIP, pp. 024301, 2008.
2007
Hashimoto, T., F. Wu, J. S. Speck, and S. Nakamura, "A GaN bulk crystal with improved structural quality grown by the ammonothermal method", Nature materials, vol. 6, no. 8: Nature Publishing Group, pp. 568, 2007.
Imer, B., F. Wu, J. S. Speck, and S. P. DenBaars, "Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)", Journal of Crystal Growth, vol. 306, no. 2: Elsevier, pp. 330–338, 2007.
Hashimoto, T., F. Wu, J. S. Speck, and S. Nakamura, "Growth of bulk GaN crystals by the basic ammonothermal method", Japanese Journal of Applied Physics, vol. 46, no. 10L: IOP Publishing, pp. L889, 2007.
Hashimoto, T., F. Wu, J. S. Speck, and S. Nakamura, "Growth of bulk GaN with low dislocation density by the ammonothermal method using polycrystalline GaN nutrient", Japanese journal of applied physics, vol. 46, no. 6L: IOP Publishing, pp. L525, 2007.
2006
Brown, J. S., G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and J. S. Speck, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction", Journal of applied physics, vol. 99, no. 7: AIP, pp. 074902, 2006.
2005
Hashimoto, T., K. Fujino, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "GaN and Related Alloys", MRS Symposia, vol. 831, Pittsburgh, Materials Research Society, 2005.
Rajan, S., M. Wong, Y. Fu, F. Wu, JS. Speck, and UK. Mishra, "Growth and electrical characterization of N-face AlGaN/GaN heterostructures", Japanese journal of applied physics, vol. 44, no. 11L: IOP Publishing, pp. L1478, 2005.