Publications

Found 158 results
Author Title Type [ Year(Desc)]
Filters: Author is Mishra, Umesh K  [Clear All Filters]
1991
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Proc. Bipolar Circuits and Technology Meet., 1991 Proc. Bipolar Circuits and Technology Meet., 1991 188, 1991", Proc. Bipolar Circuits and Technology Meet, vol. 188, 1991.
1996
Keller, S., D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. DenBaars, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
Chen, C-H., E. L. Hu, U. K. Mishra, J. P. Ibbetson, X. Wu, and J. S. Speck, "Improvement in low energy ion-induced damage with a low temperature GaAs capping layer", Applied physics letters, vol. 69, no. 12: AIP, pp. 1728–1730, 1996.
1997
Mishra, U. K., P. Parikh, P. Chavarkar, J. Yen, J. Champlain, B. Thibeault, H. Reese, S. Stone Shi, E. Hu, L. Zhu, et al., "Oxide based compound semiconductor electronics", Electron Devices Meeting, 1997. IEDM'97. Technical Digest., International: IEEE, pp. 545–548, 1997.
1998
Keller, S., F. Cabané, MS. Minsky, X. Hui Wu, MP. Mack, J. S. Speck, E. Hu, LA. Coldren, U. K. Mishra, and S. P. DenBaars, "MOCVD growth and properties of InGaN/GaN multi-quantum wells", Materials Science Forum, vol. 264: Trans Tech Publications, pp. 1157–1160, 1998.
Abare, A. C., M. P. Mack, M. W. Hansen, K. R Sink, P. Kozodoy, S. L. Keller, E. L. Hu, J. S. Speck, J. Edward Bowers, U. K. Mishra, et al., "Pulsed operation of (Al, Ga, In) N blue laser diodes", In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, vol. 3284: International Society for Optics and Photonics, pp. 103–113, 1998.
1999
Chavarkar, P. M., L. Zhao, S. Keller, A. Fisher, J. S. Speck, and U. K. Mishra, "Strain relaxation in InxGa1-xAs lattice engineered substrates", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1050–1051, 1999.
2000
Mishra, U. K., R. Ventury, L. McCarthy, Y. Smorchkova, S. Keller, H. Xing, N. Zhang, JS. Speck, R. York, S. DenBaars, et al., "AlGaN-GaN HEMTs and HBTs for microwave power", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 35–36, 2000.
Hansen, M., A. C. Abare, P. Kozodoy, T. M. Katona, M. D. Craven, J. S. Speck, U. K. Mishra, L. A. Coldren, and S. P. DenBaars, "Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 14–19, 2000.
Elsass, C. R., I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, et al., "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
2001
Link, A., O. Ambacher, IP. Smorchkova, U. K. Mishra, J. S. Speck, M. Stutzmann, and others, "Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures", Materials Science Forum, vol. 353: Trans Tech Publications Ltd., Zurich-Uetikon, Switzerland, pp. 787–790, 2001.
Elsass, C. R., C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamrib, et al., "Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 40, no. 11R: IOP Publishing, pp. 6235, 2001.
Xing, H., DS. Green, L. McCarthy, IP. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. DenBaars, J. Speck, and U. K. Mishra, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.
2002
Jena, D., S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, et al., "Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys", Applied Physics Letters, vol. 81, no. 23: AIP, pp. 4395–4397, 2002.
2003
Ringel, SA., A. Armstrong, A. Arehart, B. Moran, U. K. Mishra, and JS. Speck, "Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy", Compound Semiconductors, 2003. International Symposium on: IEEE, pp. 4–5, 2003.
Jena, D., S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher, "Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN", Physical Review B, vol. 67, no. 15: APS, pp. 153306, 2003.
Heikman, S., S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures", Journal of applied physics, vol. 93, no. 12: AIP, pp. 10114–10118, 2003.
Jena, D., S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher, "Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN (4", Physical Review-Section B-Condensed Matter, vol. 67, no. 15: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 153306–153306, 2003.
2004
Speck, J. S., and U. K. Mishra, Low Noise Amplifiers Based on Lattice Engineered Substrates: DTIC Document, 2004.
Rajan, S., P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE", IEEE Electron Device Letters, vol. 25, no. 5: IEEE, pp. 247–249, 2004.
Waltereit, P., C. Poblenz, S. Rajan, F. Wu, U. K. Mishra, and J. S. Speck, "Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors", Japanese journal of applied physics, vol. 43, no. 12A: IOP Publishing, pp. L1520, 2004.
2005
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates", Japanese journal of applied physics, vol. 44, no. 1L: IOP Publishing, pp. L173, 2005.
Heikman, S., S. Keller, S. Newman, Y. Wu, C. Moe, B. Moran, M. Schmidt, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates", Japanese journal of applied physics, vol. 44, no. 3L: IOP Publishing, pp. L405, 2005.
Hansen, P. J., Y. Terao, Y. Wu, R. A. York, U. K. Mishra, and JS. Speck, "LiNbO 3 thin film growth on (0001)-GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 1: AVS, pp. 162–167, 2005.
Rajan, S., A. Chakraborty, U. K. Mishra, C. Poblenz, P. Waltereit, and J. S. Speck, "MBE-Grown AIGaN/GaN HEMTs on SiC", High Performance Devices, pp. 108–113, 2005.

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