Publications
"Proc. Bipolar Circuits and Technology Meet., 1991 Proc. Bipolar Circuits and Technology Meet., 1991 188, 1991", Proc. Bipolar Circuits and Technology Meet, vol. 188, 1991.
, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
, "Improvement in low energy ion-induced damage with a low temperature GaAs capping layer", Applied physics letters, vol. 69, no. 12: AIP, pp. 1728–1730, 1996.
, "Oxide based compound semiconductor electronics", Electron Devices Meeting, 1997. IEDM'97. Technical Digest., International: IEEE, pp. 545–548, 1997.
, "MOCVD growth and properties of InGaN/GaN multi-quantum wells", Materials Science Forum, vol. 264: Trans Tech Publications, pp. 1157–1160, 1998.
, "Pulsed operation of (Al, Ga, In) N blue laser diodes", In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, vol. 3284: International Society for Optics and Photonics, pp. 103–113, 1998.
, "Strain relaxation in InxGa1-xAs lattice engineered substrates", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1050–1051, 1999.
, "AlGaN-GaN HEMTs and HBTs for microwave power", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 35–36, 2000.
, "Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 14–19, 2000.
, "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
, "Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures", Materials Science Forum, vol. 353: Trans Tech Publications Ltd., Zurich-Uetikon, Switzerland, pp. 787–790, 2001.
, "Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 40, no. 11R: IOP Publishing, pp. 6235, 2001.
, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.
, "Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys", Applied Physics Letters, vol. 81, no. 23: AIP, pp. 4395–4397, 2002.
, "Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy", Compound Semiconductors, 2003. International Symposium on: IEEE, pp. 4–5, 2003.
, "Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN", Physical Review B, vol. 67, no. 15: APS, pp. 153306, 2003.
, "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures", Journal of applied physics, vol. 93, no. 12: AIP, pp. 10114–10118, 2003.
, "Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN (4", Physical Review-Section B-Condensed Matter, vol. 67, no. 15: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 153306–153306, 2003.
, Low Noise Amplifiers Based on Lattice Engineered Substrates: DTIC Document, 2004.
, "Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE", IEEE Electron Device Letters, vol. 25, no. 5: IEEE, pp. 247–249, 2004.
, "Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors", Japanese journal of applied physics, vol. 43, no. 12A: IOP Publishing, pp. L1520, 2004.
, "Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates", Japanese journal of applied physics, vol. 44, no. 1L: IOP Publishing, pp. L173, 2005.
, "Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates", Japanese journal of applied physics, vol. 44, no. 3L: IOP Publishing, pp. L405, 2005.
, "LiNbO 3 thin film growth on (0001)-GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 1: AVS, pp. 162–167, 2005.
, "MBE-Grown AIGaN/GaN HEMTs on SiC", High Performance Devices, pp. 108–113, 2005.
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