Publications

Found 16 results
Author Title Type [ Year(Asc)]
Filters: Author is Mishra, Umesh K and First Letter Of Title is N  [Clear All Filters]
2015
Ahmadi, E., F. Wu, H. Li, S. W. Kaun, M. Tahhan, K. Hestroffer, S. Keller, J. S. Speck, and U. K. Mishra, "N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055012, 2015.
2012
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, NON-POLAR (Al, B, In, Ga) N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES, 2012.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. S. Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, may # " 29", 2012.
2011
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, 2011.
Rajan, S., C. Soo Suh, J. S. Speck, and U. K. Mishra, N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor, 2011.
Dasgupta, S., S. Keller, J. S. Speck, U. K. Mishra, and others, "N-Polar GaN/AlN MIS-HEMT With $ f_ ${$$\backslash$rm MAX$}$ $ of 204 GHz for Ka-Band Applications", IEEE Electron Device Letters, vol. 32, no. 12: IEEE, pp. 1683–1685, 2011.
2010
Wong, M. Hoi, Y. Pei, D. Brown, J. S. Speck, U. K. Mishra, M. L. Schuette, H. Kim, V. Balasubramanian, and W. Lu, "N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 189–192, 2010.
Dasgupta, S., Y. Pei, B. L. Swenson, S. Keller, J. S. Speck, U. K. Mishra, and others, "N-polar GaN/AlN MIS-HEMT for Ka-band power applications", IEEE Electron Device Letters, vol. 31, no. 12: IEEE, pp. 1437–1439, 2010.
Mishra, U. K., M. Hoi Wong, S. Dasgupta, D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and others, "N-polar GaN-based MIS-HEMTs for mixed signal applications", Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International: IEEE, pp. 1130–1133, 2010.
2009
Dasgupta, S., D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others, "N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art f T. L G product of 16.8 GHz-μm", Electron Devices Meeting (IEDM), 2009 IEEE International: IEEE, pp. 1–3, 2009.
2008
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-face metal–insulator–semiconductor high-electron-mobility transistors with AlN back-barrier", IEEE Electron Device Letters, vol. 29, no. 10: IEEE, pp. 1101–1104, 2008.
2007
Wong, M. Hoi, S. Rajan, RM. Chu, T. Palacios, C-S. Suh, L. S. McCarthy, S. Keller, J. S. Speck, and U. K. Mishra, "N-face high electron mobility transistors with a GaN-spacer", physica status solidi (a), vol. 204, no. 6: Wiley Online Library, pp. 2049–2053, 2007.
Rajan, S., A. Chini, M. Hoi Wong, J. S. Speck, and U. K. Mishra, "N-polar Ga N/ Al Ga N/ Ga N high electron mobility transistors", Journal of Applied Physics, vol. 102, no. 4: AIP, pp. 044501, 2007.
Rajan, S., E. Hsieh, M. Hoi Wong, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-polar GaN Electronics", Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on: IEEE, pp. 368–368, 2007.
2006
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, 2006.
Chakraborty, A., B. A. Haskell, H. Masui, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 739, 2006.