| Title | N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art f T. L G product of 16.8 GHz-μm |
| Publication Type | Conference Paper |
| Year of Publication | 2009 |
| Authors | Dasgupta, S., D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others |
| Conference Name | Electron Devices Meeting (IEDM), 2009 IEEE International |
| Publisher | IEEE |