Publications

Found 367 results
Author Title Type [ Year(Desc)]
Filters: Author is Nakamura, Shuji  [Clear All Filters]
2011
Farrell, R. M., D. A. Haeger, P. Shan Hsu, U. K. Mishra, S. P. DenBaars, J. S. Speck, and S. Nakamura, STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga, Al, In, B) N LASER DIODES, 2011.
Farrell, R. M., M. T. Hardy, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure for Improving the Mirror Facet Cleaving Yield of (Ga, Al, In, B) N Laser Diodes Grown on Nonpolar or Semipolar (Ga, Al, In, B) N Substrates, 2011.
Hardy, M. T., Y-. Da Lin, H. Ohta, S. P. DenBaars, J. S. Speck, S. Nakamura, and K. M. Kelchner, Superluminescent diodes by crystallographic etching, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10R: IOP Publishing, pp. 101001, 2011.
2012
Haeger, D. A., E. C. Young, R. B. Chung, F. Wu, N. A. Pfaff, M. Tsai, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., "384 nm laser diode grown on a (20 2\= 1) semipolar relaxed AlGaN buffer layer", Applied Physics Letters, vol. 100, no. 16: AIP, pp. 161107, 2012.
Haeger, D., E. Young, R. Chung, F. Wu, S. Nakamura, S. DenBaars, J. S. Speck, A. Romanov, and D. A. Cohen, "384nm AlGaN Diode Lasers on Relaxed Semipolar Buffers", CLEO: Science and Innovations: Optical Society of America, pp. CTu2N–4, 2012.
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, 2012.
Henry, T. A., A. Armstrong, K. M. Kelchner, S. Nakamura, SP. DenBaars, and JS. Speck, "Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 100, no. 8: AIP, pp. 082103, 2012.
Brinkley, S. E., C. Lalau Keraly, J. Sonoda, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Chip shaping for light extraction enhancement of bulk c-plane light-emitting diodes", Applied Physics Express, vol. 5, no. 3: IOP Publishing, pp. 032104, 2012.
Young, E. C., F. Wu, A. E. Romanov, D. A. Haeger, S. Nakamura, S. P. DenBaars, D. A. Cohen, and J. S. Speck, "Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission", Applied Physics Letters, vol. 101, no. 14: AIP, pp. 142109, 2012.
Kim, K. C., M. C. Schmidt, F. Wu, A. Hirai, M. B. McLaurin, S. P. DenBaars, S. Nakamura, and J. S. Speck, CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B) N ON VARIOUS SUBSTRATES, mar # " 22", 2012.
Hardy, M. T., P. Shan Hsu, I. L. Koslow, D. Feezell, S. Nakamura, J. S. Speck, and S. DenBaars, "Demonstration of a Relaxed Waveguide Semipolar (202Ø1) InGaN/GaN Laser Diode", CLEO: Science and Innovations: Optical Society of America, pp. CTu2N–2, 2012.
Hardy, M. T., P. S. Hsu, I. Koslow, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode", Lasers and Electro-Optics (CLEO), 2012 Conference on: IEEE, pp. 1–2, 2012.
Holder, C., J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, "Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers", Applied Physics Express, vol. 5, no. 9: IOP Publishing, pp. 092104, 2012.
Craven, M. D., S. P. DenBaars, J. S. Speck, and S. Nakamura, Dislocation reduction in non-polar iii-nitride thin films, 2012.
Jewell, J., D. Simeonov, S-C. Huang, Y-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, "Double embedded photonic crystals for extraction of guided light in light-emitting diodes", Applied Physics Letters, vol. 100, no. 17: AIP, pp. 171105, 2012.
Hu, Y-L., R. M. Farrell, C. J. Neufeld, M. Iza, S. C. Cruz, N. Pfaff, D. Simeonov, S. Keller, S. Nakamura, S. P. DenBaars, et al., "Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 100, no. 16: AIP, pp. 161101, 2012.
Masui, H., H. Yamada, K. Iso, A. Hirai, M. Saito, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut, 2012.
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation, 2012.
Pimputkar, S., J. S. Speck, and S. Nakamura, Group-iii nitride crystal ammonothermally grown using an initially off-oriented non-polar or semi-polar growth surface of a group-iii nitride seed crystal, 2012.
Zhao, Y., S. Tanaka, C-Y. Huang, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, High indium uptake and high polarization ratio for group-iii nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrate, 2012.
Speck, J. S., S. P. DenBaars, U. K. Mishra, and S. Nakamura, High Performance InGaN-Based Solar Cells: DTIC Document, 2012.
Matioli, E., S. Brinkley, K. M. Kelchner, Y-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, "High-brightness polarized light-emitting diodes", Light: Science & Applications, vol. 1, no. 8: Nature Publishing Group, pp. e22, 2012.
Pan, C-C., S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, "High-power, low-efficiency-droop semipolar (2021) single-quantum-well blue light-emitting diodes", Applied Physics Express, vol. 5, no. 6: IOP Publishing, pp. 062103, 2012.
Farrell, R. M., C. J. Neufeld, N. G. Toledo, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. Nakamura, Iii-nitride flip-chip solar cells, jul # " 19", 2012.

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