Publications
Found 21 results
Author Title Type [ Year
] Filters: Author is DenBaars, Steven P and First Letter Of Title is I [Clear All Filters]
, "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320P, 2018.
, "Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time-and spatially-resolved near-field photoluminescence", Optical Materials Express, vol. 7, no. 9: Optical Society of America, pp. 3116–3123, 2017.
, "Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes", Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2017 Conference on: IEEE, pp. 1–2, 2017.
, "Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition", Semiconductor Science and Technology, vol. 31, no. 8: IOP Publishing, pp. 085003, 2016.
, "Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes", IEEE Photonics Technology Letters, vol. 26, no. 1: IEEE, pp. 43–46, 2014.
, "Improved performance of long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1- xN buffer layers", Applied Physics Express, vol. 7, no. 3: IOP Publishing, pp. 031003, 2014.
, "Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes", Applied Physics Letters, vol. 103, no. 8: AIP, pp. 081103, 2013.
, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
, Iii-nitride flip-chip solar cells, jul # " 19", 2012.
, "Influence of Mg-doped barriers on semipolar (20 2\= 1) multiple-quantum-well green light-emitting diodes", Applied Physics Letters, vol. 99, no. 14: AIP, pp. 141114, 2011.
, "Integrated non-III-nitride/III-nitride tandem solar cell", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 265–266, 2011.
, "InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 052702, 2010.
, "Impact of point defects on the luminescence properties of (Al, Ga) N", Materials Science Forum, vol. 590: Trans Tech Publications, pp. 233–248, 2008.
, "InGaN/GaN laser diodes on semipolar (10$$\backslash$bar 1$ $$\backslash$bar 1$) bulk GaN substrates", physica status solidi (c), vol. 5, no. 6: WILEY-VCH Verlag, pp. 2108–2110, 2008.
, "Impact of substrate miscut on the characteristic of m-plane InGaN/GaN light emitting diodes", Japanese Journal of Applied Physics, vol. 46, no. 12L: IOP Publishing, pp. L1117, 2007.
, "Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 3: Wiley Online Library, pp. 125–127, 2007.
, "Improved quality (11 2\= 0) a-plane GaN with sidewall lateral epitaxial overgrowth", Applied physics letters, vol. 88, no. 6: AIP, pp. 061908, 2006.
, "Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 40, no. 11R: IOP Publishing, pp. 6235, 2001.
, "Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 8–13, 2000.