Publications

Found 673 results
Author Title Type [ Year(Asc)]
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2011
Toledo, N. G., S. C. Cruz, C. J. Neufeld, J. R. Lang, M. A. Scarpulla, T. Buehl, A. C. Gossard, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Integrated non-III-nitride/III-nitride tandem solar cell", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 265–266, 2011.
Poblenz, C., J. S. Speck, and D. S. Kamber, Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture, 2011.
Lee, C. Hoon, H. San Kim, and J. S. Speck, Light emitting device having a plurality of light emitting cells and method of fabricating the same, 2011.
Hirai, A., J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for increasing the area of non-polar and semi-polar nitride substrates, 2011.
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Method of controlling stress in group-iii nitride films deposited on substrates, 2011.
Hsu, P. Shan, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Misfit dislocation formation via pre-existing threading dislocation glide in (11 2\= 2) semipolar heteroepitaxy", Applied Physics Letters, vol. 99, no. 8: AIP, pp. 081912, 2011.
Haeger, D. A., C. Holder, R. M. Farrell, P. Shan Hsu, K. M. Kelchner, K. Fujito, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 261–262, 2011.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Novel vessel designs and relative placements of the source material and seed crystals with respect to the vessel for the ammonothermal growth of group-iii nitride crystals, 2011.
Rajan, S., C. Soo Suh, J. S. Speck, and U. K. Mishra, N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor, 2011.
Dasgupta, S., S. Keller, J. S. Speck, U. K. Mishra, and others, "N-Polar GaN/AlN MIS-HEMT With $ f_ ${$$\backslash$rm MAX$}$ $ of 204 GHz for Ka-Band Applications", IEEE Electron Device Letters, vol. 32, no. 12: IEEE, pp. 1683–1685, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells", Applied Physics Letters, vol. 99, no. 7: AIP, pp. 071104, 2011.
Chung, R. B., Z. Chen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys, 2011.
Iso, K., H. Yamada, M. Saito, A. Hirai, S. P. DenBaars, J. S. Speck, and S. Nakamura, Planar nonpolar group iii-nitride films grown on miscut substrates, 2011.
Brinkley, S. E., Y-. Da Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes", Applied Physics Letters, vol. 98, no. 1: AIP, pp. 011110, 2011.
Speck, J. S., "Progress in nonpolar and semipolar GaN materials and devices", Semiconductor Device Research Symposium (ISDRS), 2011 International: IEEE, pp. 1–1, 2011.
Gao, F., B. Lu, L. Li, S. Kaun, J. S. Speck, C. V. Thompson, and T. Palacios, "Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 22: AIP, pp. 223506, 2011.
Dasgupta, S., D. F. Brown, U. Singisetti, S. Keller, J. S. Speck, U. K. Mishra, and others, "Self-aligned technology for N-polar GaN/Al (Ga) N MIS-HEMTs", IEEE Electron Device Letters, vol. 32, no. 1: IEEE, pp. 33–35, 2011.
Young, E. C., A. E. Romanov, and J. S. Speck, "Semiconductors, dielectrics, and organic materials-061001 Determination of Composition and Lattice Relaxation in Semipolar Ternary (In, Al, Ga) N Strained Layers from Symmetric X-ray Diffraction Measurements", Applied Physics Express, vol. 4, no. 6, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Semiconductors, dielectrics, and organic materials-101001 Temperature Dependent Capacitance-Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82 In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10, 2011.
Chung, R. B., E. C. Young, D. A. Haeger, S. P. DenBaars, J. S. Speck, and D. A. Cohen, "Semipolar AlN on bulk GaN for UV-C diode lasers", Quantum Electronics and Laser Science Conference: Optical Society of America, pp. JTuB2, 2011.
Tyagi, A., R. M. Farrell, C-Y. Huang, P. Shan Hsu, D. A. Haeger, K. M. Kelchner, H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semipolar iii-nitride laser diodes with etched mirrors, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, U. K. Mishra, S. P. DenBaars, J. S. Speck, and S. Nakamura, STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga, Al, In, B) N LASER DIODES, 2011.
Farrell, R. M., M. T. Hardy, H. Ohta, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure for Improving the Mirror Facet Cleaving Yield of (Ga, Al, In, B) N Laser Diodes Grown on Nonpolar or Semipolar (Ga, Al, In, B) N Substrates, 2011.
Hardy, M. T., Y-. Da Lin, H. Ohta, S. P. DenBaars, J. S. Speck, S. Nakamura, and K. M. Kelchner, Superluminescent diodes by crystallographic etching, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10R: IOP Publishing, pp. 101001, 2011.

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