Publications

Found 48 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, James S and First Letter Of Title is M  [Clear All Filters]
2016
Feneberg, M., J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, and J. S. Speck, "Many-electron effects on the dielectric function of cubic In 2 O 3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift", Physical Review B, vol. 93, no. 4: APS, pp. 045203, 2016.
Becerra, D. L., L. Y. Kuritzky, J. Nedy, A. Saud Abbas, A. Pourhashemi, R. M. Farrell, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2\= 1\=) III-nitride laser diodes with chemically assisted ion beam etched facets", Applied Physics Letters, vol. 108, no. 9: AIP Publishing, pp. 091106, 2016.
D'evelyn, M. P., and J. S. Speck, Method for synthesis of high quality large area bulk gallium based crystals, 2016.
2015
D'evelyn, M. P., and J. S. Speck, Method for synthesis of high quality large area bulk gallium based crystals, 2015.
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Method of controlling stress in group-III nitride films deposited on substrates, sep # " 8", 2015.
Wu, Y-R., C-K. Wu, C-C. Hsu, and J. S. Speck, "Multidimensional Numerical Modeling on the Influence of Random Alloy Fluctuation in InGaN Quantum Well LED to the Transport Behavior", Applied Mathematics and Simulation for Semiconductors, Berlin, WIAS, 03/2015.
2014
Hirai, A., J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for increasing the area of non-polar and semi-polar nitride substrates, 2014.
Farrell, R. M., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, METHOD OF IMPROVING SURFACE MORPHOLOGY OF (Ga, Al, In, B) N THIN FILMS AND DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga, Al, In, B) N SUBSTRATES, 2014.
Farrell, R. M., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method of improving surface morphology of (Ga, Al, In, B) N thin films and devices grown on nonpolar or semipolar (Ga, Al, In, B) N substrates, aug # " 5", 2014.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Miscut semipolar optoelectronic device, jul # " 3", 2014.
Hurni, C. A., H. Kroemer, U. K. Mishra, and J. S. Speck, "m-plane (10 1\= 0) and (20 2\= 1) GaN/AlxGa1–xN conduction band offsets measured by capacitance-voltage profiling", Applied Physics Letters, vol. 105, no. 23: AIP Publishing, pp. 232108, 2014.
2013
Bierwagen, O., M. E. White, M-Y. Tsai, and J. S. Speck, "MBE of transparent semiconducting oxides", Molecular Beam Epitaxy, pp. 347–367, 2013.
Weisbuch, C. C. A., and J. S. Speck, Method for producing gallium nitride substrates for electronic and optoelectronic devices, aug # " 15", 2013.
Nam, K. Bum, H. Mok Kim, and J. S. Speck, Method of forming p-type compound semiconductor layer, 2013.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Miscut semipolar optoelectronic device, 2013.
Kaun, S. W., M. Hoi Wong, U. K. Mishra, and J. S. Speck, "Molecular beam epitaxy for high-performance Ga-face GaN electron devices", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074001, 2013.
2012
Huang, C-Y., S. Nakamura, S. P. DenBaars, and J. S. Speck, Magnesium doping in barriers in multiple quantum well structures of iii-nitride-based light emitting devices, may # " 3", 2012.
Schmidt, M. C., K. Choong Kim, H. Sato, S. P. DenBaars, J. S. Speck, and S. Nakamura, Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices, 2012.
Chung, R. B., H. Tse Chen, C-C. Pan, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for fabrication of (al, in, ga) nitride based vertical light emitting diodes with enhanced current spreading of n-type electrode, jun # " 7", 2012.
Sato, H., H. Hirasawa, R. B. Chung, S. P. DenBaars, J. S. Speck, and S. Nakamura, Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes, 2012.
Chung, R. B., C. Han, S. P. DenBaars, J. S. Speck, and S. Nakamura, METHOD FOR REDUCTION OF EFFICIENCY DROOP USING AN (Al, In, Ga) N/Al (x) In (1-x) N SUPERLATTICE ELECTRON BLOCKING LAYER IN NITRIDE BASED LIGHT EMITTING DIODES, jun # " 7", 2012.
Bierwagen, O., and J. S. Speck, "Mg acceptor doping of In2O3 and overcompensation by oxygen vacancies", Applied Physics Letters, vol. 101, no. 10: AIP, pp. 102107, 2012.
Wong, M. Hoi, F. Wu, C. A. Hurni, S. Choi, J. S. Speck, and U. K. Mishra, "Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source", Applied Physics Letters, vol. 100, no. 7: AIP, pp. 072107, 2012.
2011
Hirai, A., J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for increasing the area of non-polar and semi-polar nitride substrates, 2011.
Marchand, H., B. J. Moran, U. K. Mishra, and J. S. Speck, Method of controlling stress in group-iii nitride films deposited on substrates, 2011.

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