Publications

Found 34 results
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Filters: Author is Speck, James S and First Letter Of Title is A  [Clear All Filters]
2018
Espenlaub, A. C., A. I. Alhassan, S. Nakamura, C. Weisbuch, and J. S. Speck, "Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes", Applied Physics Letters, vol. 112, no. 14: AIP Publishing, pp. 141106, 2018.
2017
Foronda, H. M., B. Mazumder, E. C. Young, M. A. Laurent, Y. Li, S. P. DenBaars, and J. S. Speck, "Analysis of Vegardís law for lattice matching InxAl1- xN to GaN by metalorganic chemical vapor deposition", Journal of Crystal Growth, vol. 475: North-Holland, pp. 127–135, 2017.
2016
Malkowski, T. F., S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave", Journal of Crystal Growth, vol. 456: North-Holland, pp. 21–26, 2016.
2015
Iza, M., J. S. Speck, S. Nakamura, and S. P. DenBaars, (Al, In, Ga, B) N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE, 2015.
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, may # " 26", 2015.
Pimputkar, S., J. S. Speck, S. Nakamura, and S-ichiro. Kawabata, Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other, 2015.
2014
Da Lin, Y-., H. Ohta, S. Nakamura, S. P. DenBaars, and J. S. Speck, Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes, jun # " 24", 2014.
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations, 2014.
Feneberg, M., C. Lidig, K. Lange, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, and R. Goldhahn, "Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 82–86, 2014.
Hu, Y-L., E. Rind, and J. S. Speck, "Antiphase boundaries and rotation domains in In2O3 (001) films grown on yttria-stabilized zirconia (001)", Journal of Applied Crystallography, vol. 47, no. 1: International Union of Crystallography, pp. 443–448, 2014.
Mazumder, B., X. Liu, R. Yeluri, F. Wu, U. K. Mishra, and J. S. Speck, "Atom probe tomography studies of Al2O3 gate dielectrics on GaN", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 134101, 2014.
Zhao, Y., F. Wu, T-J. Yang, Y-R. Wu, S. Nakamura, and J. S. Speck, "Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells", Applied Physics Express, vol. 7, no. 2: IOP Publishing, pp. 025503, 2014.
2013
Poblenz, C., J. S. Speck, and D. S. Kamber, Ammonothermal method for growth of bulk gallium nitride, 2013.
Pimputkar, S., P. Von Dollen, S. Nakamura, and J. S. Speck, Apparatus used for the growth of group-iii nitride crystals utilizing carbon fiber containing materials and group-iii nitride grown therewith, 2013.
Mazumder, B., S. W. Kaun, J. Lu, S. Keller, U. K. Mishra, and J. S. Speck, "Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 102, no. 11: AIP, pp. 111603, 2013.
Mazumder, B., S. W. Kaun, J. Lu, S. Keller, U. K. Mishra, and J. S. Speck, "Atom probe characterization of an AlN interlayer within HEMT structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition", Bulletin of the American Physical Society, vol. 58: American Physical Society, 2013.
2012
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, 2012.
Raman, A., C. A. Hurni, J. S. Speck, and U. K. Mishra, "AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy", physica status solidi (a), vol. 209, no. 1: Wiley Online Library, pp. 216–220, 2012.
Wu, Y-R., R. Shivaraman, K-C. Wang, and J. S. Speck, "Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure", Applied Physics Letters, vol. 101, no. 8: AIP, pp. 083505, 2012.
Wong, M. Hoi, U. Singisetti, J. Lu, J. S. Speck, and U. K. Mishra, "Anomalous output conductance in N-polar GaN high electron mobility transistors", IEEE Transactions on Electron Devices, vol. 59, no. 11: IEEE, pp. 2988–2995, 2012.
Hu, Y-L., S. Krämer, P. T. Fini, and J. S. Speck, "Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers", Applied Physics Letters, vol. 101, no. 11: AIP, pp. 112102, 2012.
2011
Chung, R. Byung- Kyu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Abnormal Behavior of MOCVD Grown Al x In 1-x N Observed by Various Material Characterizations", 한국재료학회, vol. 17, 10/2011.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Addition of hydrogen and/or nitrogen containing compounds to the nitrogen-containing solvent used during the ammonothermal growth of group-iii nitride crystals, sep # " 1", 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-type AlGaN etch stop layers", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 092105, 2011.
Bryant, B. N., D. S. Kamber, F. Wu, S. Nakamura, and J. S. Speck, "Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy", physica status solidi (c), vol. 8, no. 5: Wiley Online Library, pp. 1463–1466, 2011.

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