Publications
Found 52 results
Author Title Type [ Year
] Filters: Author is Speck, JS and First Letter Of Title is C [Clear All Filters]
, "Characterization of the Si/Diamond Interface", MRS Online Proceedings Library Archive, vol. 242: Cambridge University Press, 1992.
, "Common Themes in ther Epitaxial Growth of Oxides on Semiconductors", MRS Online Proceedings Library Archive, vol. 341: Cambridge University Press, 1994.
, "Crystallographic orientation of epitaxial BaTiO3 films: The role of thermal-expansion mismatch with the substrate", Journal of applied physics, vol. 77, no. 4: AIP, pp. 1517–1522, 1995.
, "Cleaved facets in GaN by wafer fusion of GaN to InP", MRS Online Proceedings Library Archive, vol. 421: Cambridge University Press, 1996.
, "Cleaved GaN facets by wafer fusion of GaN to InP", Applied physics letters, vol. 68, no. 15: AIP, pp. 2147–2149, 1996.
, "Crystallization behavior of Li 1–5x Ta 1+ x O 3 glasses synthesized from liquid precursors", Journal of materials research, vol. 11, no. 9: Cambridge University Press, pp. 2376–2387, 1996.
, "Computer simulation of threading dislocation density reduction in heteroepitaxial layers", Philosophical Magazine A, vol. 76, no. 4: Taylor & Francis, pp. 807–835, 1997.
, "Cleaved and etched facet nitride laser diodes", IEEE Journal of selected topics in quantum electronics, vol. 4, no. 3: IEEE, pp. 505–509, 1998.
, "CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES-Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 73, no. 6: New York [etc.] American Institute of Physics., pp. 747–749, 1998.
, "CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES-Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire", Applied Physics Letters, vol. 73, no. 21: New York [etc.] American Institute of Physics., pp. 3090–3092, 1998.
, "Cubic and Hexagonal Fractions in GaN Nucleation Layers Measured Using Grazing Incidence X-Ray Scattering", APS March Meeting Abstracts, 1998.
, "Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride", Applied physics letters, vol. 74, no. 14: AIP, pp. 2035–2037, 1999.
, "Chapter 12: Material Growth and Characterization (Wide Gap and Nitride)-Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapour", Institute of Physics Conference Series, vol. 162: Bristol [England]; Boston: Adam Hilger, Ltd., c1985-, pp. 681–686, 1999.
, "Chapter 5: Field Effect Transistors (FETs and HEMTs)-First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)", Institute of Physics Conference Series, vol. 162: Bristol [England]; Boston: Adam Hilger, Ltd., c1985-, pp. 177–184, 1999.
, "Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 88, no. 4: AIP, pp. 1855–1860, 2000.
, "Controlled ordering and positioning of InAs self-assembled quantum dots", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 18, no. 4: AVS, pp. 2193–2196, 2000.
, "Capture Kinetics of Electron Traps in MBE-Grown n-GaN", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 309–313, 2001.
, "Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN", physica status solidi (b), vol. 228, no. 3: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 937–946, 2001.
, "Chapter 6: III-Nitrides and Related Materials-6.1 Growth and Physical Properties-Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures", Materials Science Forum, vol. 353: Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, pp. 787–790, 2001.
, "Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy", Physical review letters, vol. 87, no. 10: APS, pp. 106802, 2001.
, "Condensed Matter: Electronic Properties, etc.-Characterization of Individual Threading Dislocations in GaN Using Ballistic Electron Emission Microscopy", Physical Review Letters, vol. 87, no. 10: [Woodbury, NY, etc.] American Physical Society., pp. 106802–106802, 2001.
, "Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy", Applied Physics Letters, vol. 81, no. 19: AIP, pp. 3558–3560, 2002.
, "Crosshatch surface morphology in mismatched films", Molecular Beam Epitaxy, 2002 International Conference on: IEEE, pp. 23–24, 2002.
, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope", Journal of applied physics, vol. 94, no. 7: AIP, pp. 4315–4319, 2003.
, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission", Info: Postprints, UC Santa Barbara, 2003.