Publications

Found 5 results
Author Title Type [ Year(Desc)]
Filters: Author is J. Speck and Keyword is gallium compounds  [Clear All Filters]
2011
Denninghoff, D. J., S. Dasgupta, D. F. Brown, S. Keller, J. Speck, and U. K. Mishra, "N-polar GaN HEMTs with fmax>300 GHz using high-aspect-ratio T-gate design", 69th Device Research Conference, June, 2011.
2019
Mauze, A., Y. Zhang, and J. Speck, "(010) β-Ga2O3 Metal Oxide Catalyzed Epitaxy (MOCATAXY) growth and Sn doping in plasma-assisted molecular beam epitaxy", 2019 Compound Semiconductor Week (CSW), May, 2019.
Wang, J., E. Young, B. SaifAddin, C. Zollner, A. Almogbel, M. Fireman, M. Izza, S. Nakamura, S. Denbaars, and J. Speck, "Hybrid III-Nitride Tunnel Junctions for Low Excess Voltage Blue LEDs and UVC LEDs", 2019 Compound Semiconductor Week (CSW), May, 2019.
Mauze, A., Y. Zhang, T. Mates, and J. Speck, "Investigation of Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", 2019 Compound Semiconductor Week (CSW), May, 2019.
Almogbel, A., B. SaifAddin, C. Zollner, M. Iza, H. Albrithen, A. Alyamani, A. Albadri, S. Nakamura, S. Denbaars, and J. Speck, "Recent progress in AlGaN UV-C LEDs grown on SiC", 2019 Compound Semiconductor Week (CSW), May, 2019.