Publications

Found 6 results
Author Title Type [ Year(Desc)]
Filters: Author is Zhao, Lijie  [Clear All Filters]
1999
Fini, P. T., J. P. Ibbetson, H. Marchand, L. Zhao, S. P. DenBaars, and J. S. Speck, "Measurement of crystallographic tilt in the lateral epitaxial overgrowth of GaN", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1044, 1999.
Chavarkar, P. M., L. Zhao, S. Keller, A. Fisher, J. S. Speck, and U. K. Mishra, "Strain relaxation in InxGa1-xAs lattice engineered substrates", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1050–1051, 1999.
2000
Hansen, M., P. Fini, L. Zhao, A. Abare, L. A. Coldren, J. S. Speck, and S. P. DenBaars, "Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 8–13, 2000.
Fini, P., L. Zhao, J. S. Speck, S. P. DenBaars, A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, RMV. Murty, and O. Auciello, Measurement and minimization of wing tilt in laterally overgrown GaN on a SiO ${$sub 2$}$ mask.: Argonne National Lab., IL (US), 2000.
Zhao, L., H. Marchand, P. Fini, SP. DenBaars, UK. Mishra, and JS. Speck, "Polarity determination for MOCVD growth of GaN on Si (111) by convergent beam electron diffraction", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 104–110, 2000.
Zhao, L., JS. Speck, R. Rajavel, J. Jensen, D. Leonard, T. Strand, and W. Hamilton, "Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy", Journal of Electronic Materials, vol. 29, no. 6: Springer-Verlag, pp. 732–735, 2000.