Publications

Found 5 results
Author Title Type [ Year(Desc)]
Filters: Author is Dasgupta, Sansaptak and First Letter Of Title is N  [Clear All Filters]
2009
Dasgupta, S., D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others, "N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art f T. L G product of 16.8 GHz-μm", Electron Devices Meeting (IEDM), 2009 IEEE International: IEEE, pp. 1–3, 2009.
2010
Dasgupta, S., Y. Pei, B. L. Swenson, S. Keller, J. S. Speck, U. K. Mishra, and others, "N-polar GaN/AlN MIS-HEMT for Ka-band power applications", IEEE Electron Device Letters, vol. 31, no. 12: IEEE, pp. 1437–1439, 2010.
Mishra, U. K., M. Hoi Wong, S. Dasgupta, D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and others, "N-polar GaN-based MIS-HEMTs for mixed signal applications", Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International: IEEE, pp. 1130–1133, 2010.
2011
Denninghoff, D., S. Dasgupta, J. Lu, D. Brown, S. Keller, J. Speck, and U. Mishra, "N-Polar GaN HEMTs Grown by MBE and MOCVD with fmax of 255 and 250 GHz, Respectively", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Dasgupta, S., S. Keller, J. S. Speck, U. K. Mishra, and others, "N-Polar GaN/AlN MIS-HEMT With $ f_ ${$$\backslash$rm MAX$}$ $ of 204 GHz for Ka-Band Applications", IEEE Electron Device Letters, vol. 32, no. 12: IEEE, pp. 1683–1685, 2011.