Publications

Found 215 results
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2014
Zhao, Y., F. Wu, T-J. Yang, Y-R. Wu, S. Nakamura, and J. S. Speck, "Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells", Applied Physics Express, vol. 7, no. 2: IOP Publishing, pp. 025503, 2014.
Marcinkevičius, S., K. Gelžinyt\.e, Y. Zhao, S. Nakamura, SP. DenBaars, and JS. Speck, "Carrier redistribution between different potential sites in semipolar (20 2\= 1) InGaN quantum wells studied by near-field photoluminescence", Applied Physics Letters, vol. 105, no. 11: AIP Publishing, pp. 111108, 2014.
Sasikumar, A., AR. Arehart, SW. Kaun, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, and SA. Ringel, "Defects in GaN based transistors", Gallium Nitride Materials and Devices IX, vol. 8986: International Society for Optics and Photonics, pp. 89861C, 2014.
Zhang, Z., C. M. Jackson, A. R. Arehart, B. McSkimming, J. S. Speck, and S. A. Ringel, "Direct Determination of Energy Band Alignments of Ni/Al 2 O 3/GaN MOS Structures Using Internal Photoemission Spectroscopy", Journal of electronic materials, vol. 43, no. 4: Springer US, pp. 828–832, 2014.
Marcinkevičius, S., R. Ivanov, Y. Zhao, S. Nakamura, SP. DenBaars, and JS. Speck, "Highly polarized photoluminescence and its dynamics in semipolar (20 2\= 1\=) InGaN/GaN quantum well", Applied Physics Letters, vol. 104, no. 11: AIP, pp. 111113, 2014.
Hardy, M. T., F. Wu, C-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes", IEEE Photonics Technology Letters, vol. 26, no. 1: IEEE, pp. 43–46, 2014.
Hardy, M. T., F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes", IEEE Photonics Technology Letters, vol. 26, pp. 43-46, Jan, 2014.
Wu, Y-R., C-Y. Huang, Y. Zhao, and JS. Speck, "Nonpolar and semipolar LEDs", Nitride Semiconductor Light-Emitting Diodes (LEDs), pp. 250–275, 2014.
Chung-Ta, HSU., C-Y. Huang, Y. Zhao, S-C. Haung, D. F. Feezell, S. P. DenBaars, S. Nakamura, and J. S. Speck, Pec etching of (20-2-1) semipolar gallium nitride for external efficiency enhancement in light emitting diode applications, 2014.
Chen, J., E. Xia Zhang, C. Xuan Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, and J. S. Speck, "RF performance of proton-irradiated AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 61, no. 6: IEEE, pp. 2959–2964, 2014.
Chen, J., E. Xia Zhang, C. Xuan Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, and J. S. Speck, "RF performance of proton-irradiated AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 61, no. 6: IEEE, pp. 2959–2964, 2014.
Wu, F., Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stacking faults and interface roughening in semipolar (20 2\= 1\=) single InGaN quantum wells for long wavelength emission", Applied Physics Letters, vol. 104, no. 15: AIP, pp. 151901, 2014.
Zhao, Y., R. M. Farrell, Y-R. Wu, and J. S. Speck, "Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices", Japanese Journal of Applied Physics, vol. 53, no. 10: IOP Publishing, pp. 100206, 2014.
2013
Kawaguchi, Y., S-C. Huang, R. M. Farrell, Y. Zhao, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well III–nitride light-emitting diodes", Applied Physics Express, vol. 6, no. 5: IOP Publishing, pp. 052103, 2013.
DenBaars, S. P., D. Feezell, K. Kelchner, S. Pimputkar, C-C. Pan, C-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, et al., "Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays", Acta Materialia, vol. 61, no. 3: Pergamon, pp. 945–951, 2013.
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (2021) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, no. 6: IOP Publishing, pp. 062102, 2013.
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, 6, 2013.
Zhang, Z., AR. Arehart, E. Cinkilic, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, B. McSkimming, JS. Speck, and SA. Ringel, "Impact of proton irradiation on deep level states in n-GaN", Applied Physics Letters, vol. 103, no. 4: AIP, pp. 042102, 2013.
Zhang, Z., AR. Arehart, E. Cinkilic, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, B. McSkimming, JS. Speck, and SA. Ringel, "Impact of proton irradiation on deep level states in n-GaN", Applied Physics Letters, vol. 103, no. 4: AIP, pp. 042102, 2013.
Marcinkevičius, S., Y. Zhao, KM. Kelchner, S. Nakamura, SP. DenBaars, and JS. Speck, "Near-field investigation of spatial variations of (20 2\= 1\=) InGaN quantum well emission spectra", Applied Physics Letters, vol. 103, no. 13: AIP, pp. 131116, 2013.
Zhao, Y., Q. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Optical polarization characteristics of semipolar (303\= 1) and (303\= 1\=) InGaN/GaN light-emitting diodes", Optics express, vol. 21, no. 101: Optical Society of America, pp. A53–A59, 2013.
Chen, J., Y. S. Puzyrev, C. Xuan Zhang, E. Xia Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, S. W. Kaun, E. C. H. Kyle, et al., "Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 60, no. 6: IEEE, pp. 4080–4086, 2013.
Chen, J., Y. S. Puzyrev, C. Xuan Zhang, E. Xia Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, S. W. Kaun, E. C. H. Kyle, et al., "Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 60, no. 6: IEEE, pp. 4080–4086, 2013.
Zhao, Y., F. Wu, C-Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Suppressing void defects in long wavelength semipolar (20 2 1) InGaN quantum wells by growth rate optimization", Applied Physics Letters, vol. 102, no. 9: AIP, pp. 091905, 2013.
2012
Mazumder, B., MH. Wong, CA. Hurni, JY. Zhang, UK. Mishra, and JS. Speck, "Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 9: AIP, pp. 091601, 2012.

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