Publications

Found 215 results
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2022
Ewing, J., C. Lynsky, J. Zhang, P. Shapturenka, M. Wong, J. Smith, M. Iza, J. S. Speck, and S. P. DenBaars, "Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon", Crystals, vol. 12, pp. 1216, 2022.
Wong, M. S., P. Chan, N. Lim, H. Zhang, R. C. White, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer", Crystals, vol. 12, pp. 721, 2022.
Yao, Y., C. J. Zollner, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Polarization-Enhanced p-AlGaN Superlattice Optimization for GUV LED", IEEE Journal of Quantum Electronics, vol. 58, pp. 1-9, 2022.
Li, P., H. Li, M. S. Wong, P. Chan, Y. Yang, H. Zhang, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Progress of InGaN-Based Red Micro-Light Emitting Diodes", Crystals, vol. 12, pp. 541, 2022.
Li, P., H. Li, H. Zhang, Y. Yang, M. S. Wong, C. Lynsky, M. Iza, M. J. Gordon, J. S. Speck, S. Nakamura, et al., "Red InGaN micro-light-emitting diodes (\>620 nm) with a peak external quantum efficiency of 4.5\% using an epitaxial tunnel junction contact", Applied Physics Letters, vol. 120, 03, 2022.
Yao, Y., H. Li, P. Li, C. J. Zollner, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes", Applied Physics Express, vol. 15, pp. 064003, may, 2022.
Korlacki, R\l., M. Hilfiker, J. Knudtson, M. Stokey, U. Kilic, A. Mauze, Y. Zhang, J. Speck, V. Darakchieva, and M. Schubert, "Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1−x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3(010)", Phys. Rev. Appl., vol. 18, pp. 064019, Dec, 2022.
2023
Wang, M., F. Wu, Y. Yao, C. Zollner, M. Iza, M. Lam, S. P. DenBaars, S. Nakamura, and J. S. Speck, "10.6% external quantum efficiency germicidal UV-LEDs grown on thin highly conductive n-AlGaN", Applied Physics Letters, vol. 123, issue 23, 2023.
Itoh, T., A. Mauze, Y. Zhang, and J. S. Speck, "Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy", APL Materials, vol. 11, 04, 2023.
M Taib, I. Md, M. A. Ahmad, E. A. Alias, A. I. Alhassan, I. A. Ajia, M. M. Muhammed, I. S. Roqan, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., "Growth modification via indium surfactant for InGaN/GaN green LED", Semiconductor Science and Technology, vol. 38, pp. 035025, feb, 2023.
Cadena, R. M., D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, et al., "Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes", IEEE Transactions on Nuclear Science, vol. 70, pp. 363-369, 2023.
Wong, M. S., H. Zhang, E. S. Trageser, R. M. Anderson, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
Islam, S., A. S. Senarath, A. Sengupta, E. Xia Zhang, D. R. Ball, D. M. Fleetwood, R. D. Schrimpf, E. Farzana, A. Bhattacharyya, N. S. Hendricks, et al., "Single-Event Burnout by Cf-252 Irradiation in Vertical Beta-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate", Device Research Conference (DRC), pp. 1-2, 2023.
2024
Wong, M. S., E. S. Trageser, H. Zhang, H-M. Chang, S. Gee, T. Tak, S. Gandrothula, C. Lee, J. S. Speck, S. Nakamura, et al., "III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Optics Express, vol. 32, issue 12, 06/2024.
Islam, S., AS. Senarath, E. Farzana, DR. Ball, A. Sengupta, NS. Hendricks, A. Bhattacharyya, RA. Reed, EX. Zhang, JS. Speck, et al., "Single-Event Burnout in Vertical Beta-Ga2O3 Diodes with Pt/PtOx Schottky Contacts and High-k Field-Plate Dielectrics", IEEE Transactions on Nuclear Science, 2024.

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