Publications

Found 632 results
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2013
Shivaraman, R., Y-R. Wu, S. Choi, R. Chung, and J. Speck, "Atom Probe Tomography of III-Nitrides Based Semiconducting Devices", Microscopy and Microanalysis, vol. 19, no. S2: Cambridge University Press, pp. 956–957, 2013.
Bryant, B. N., E. C. Young, F. Wu, K. Fujito, S. Nakamura, and J. S. Speck, "Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy", Applied Physics Express, vol. 6, no. 11: IOP Publishing, pp. 115502, 2013.
Hsu, P. Shan, F. Wu, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Blue and aquamarine stress-relaxed semipolar (11 2\= 2) laser diodes", Applied Physics Letters, vol. 103, no. 16: AIP, pp. 161117, 2013.
Hsu, P. Shan, R. M. Farrell, J. J. Weaver, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Comparison of Polished and Dry Etched Semipolar $(11$\backslash$bar ${$2$}$ 2) $ III-Nitride Laser Facets", IEEE Photonics Technology Letters, vol. 25, no. 21: IEEE, pp. 2105–2107, 2013.
Farell, R. M., E. C. Young, F. Wu, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Development of high-performance nonpolar III-nitride light-emitting devices", Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International: IEEE, pp. 1–8, 2013.
Iveland, J., L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, "Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop", Physical review letters, vol. 110, no. 17: American Physical Society, pp. 177406, 2013.
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (2021) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, no. 6: IOP Publishing, pp. 062102, 2013.
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, 6, 2013.
Wu, Y-R., S-ting. Yeh, D-W. Lin, C-K. Li, H-C. Kuo, and J. S. Speck, "Influences of indium fluctuation to the carrier transport, auger recombination, and efficiency droop", Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on: IEEE, pp. 111–112, 2013.
Speck, J. S., C. C. A. Weisbuch, N. Pfaff, L. Kuritzky, and C. Lalau Keraly, Light emitting diode with conformal surface electrical contacts with glass encapsulation, 2013.
Bierwagen, O., M. E. White, M-Y. Tsai, and J. S. Speck, "MBE of transparent semiconducting oxides", Molecular Beam Epitaxy, pp. 347–367, 2013.
Weisbuch, C. C. A., and J. S. Speck, Method for producing gallium nitride substrates for electronic and optoelectronic devices, aug # " 15", 2013.
Kaun, S. W., M. Hoi Wong, U. K. Mishra, and J. S. Speck, "Molecular beam epitaxy for high-performance Ga-face GaN electron devices", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074001, 2013.
Wong, M. Hoi, S. Keller, S. Dasgupta Nidhi, D. J. Denninghoff, S. Kolluri, D. F. Brown, J. Lu, N. A. Fichtenbaum, E. Ahmadi, U. Singisetti, et al., "N-polar GaN epitaxy and high electron mobility transistors", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074009, 2013.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Optimization of annealing process for improved InGaN solar cell performance", Journal of electronic materials, vol. 42, no. 12: Springer US, pp. 3467–3470, 2013.
Metcalfe, G., N. Woodward, H. Shen, M. Wraback, P. Shan Hsu, and J. Speck, "Photoreflectance and Strain Relaxation Studies of Semipolar InGaN", APS Meeting Abstracts, 2013.
Metcalfe, G., N. Woodward, H. Shen, M. Wraback, P. Shan Hsu, and J. Speck, "Photoreflectance and Strain Relaxation Studies of Semipolar InGaN", APS Meeting Abstracts, 2013.
Choi, S., F. Wu, O. Bierwagen, and J. S. Speck, "Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 31, no. 3: AVS, pp. 031504, 2013.
Kaun, SW., MH. Wong, J. Lu, UK. Mishra, and JS. Speck, "Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN", Electronics Letters, vol. 49, no. 14: IET Digital Library, pp. 893–895, 2013.
Speck, J. S., E. L. Hu, C. C. A. Weisbuch, Y. Seok Choi, G. Koblmüller, M. Iza, and C. Hurni, SELECTIVE DRY ETCHING OF N-FACE (Al, In, Ga) N HETEROSTRUCTURES, apr # " 25", 2013.
Connelly, B. C., N. T. Woodward, G. D. Metcalfe, L. E. Rodak, N. C. Das, M. L. Reed, A. V. Sampath, H. Shen, M. Wraback, R. M. Farrell, et al., "Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Connelly, B. C., N. T. Woodward, G. D. Metcalfe, L. E. Rodak, N. C. Das, M. L. Reed, A. V. Sampath, H. Shen, M. Wraback, R. M. Farrell, et al., "Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.

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