Publications

Found 632 results
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2004
Craven, MD., F. Wu, A. Chakraborty, B. Imer, UK. Mishra, SP. DenBaars, and JS. Speck, "Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 8: AIP, pp. 1281–1283, 2004.
Rajan, S., P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE", IEEE Electron Device Letters, vol. 25, no. 5: IEEE, pp. 247–249, 2004.
Moran, B., F. Wu, AE. Romanov, UK. Mishra, SP. DenBaars, and JS. Speck, "Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer", Journal of Crystal Growth, vol. 273, no. 1-2: North-Holland, pp. 38–47, 2004.
Waltereit, P., C. Poblenz, S. Rajan, F. Wu, U. K. Mishra, and J. S. Speck, "Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors", Japanese journal of applied physics, vol. 43, no. 12A: IOP Publishing, pp. L1520, 2004.
Waltereit, P., C. Poblenz, S. Rajan, F. Wu, U. K. Mishra, and J. S. Speck, "Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors", Japanese journal of applied physics, vol. 43, no. 12A: IOP Publishing, pp. L1520, 2004.
Craven, MD., P. Waltereit, JS. Speck, and SP. DenBaars, "Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells", Applied physics letters, vol. 84, no. 4: AIP, pp. 496–498, 2004.
2005
Rajan, S., A. Chini, M. Wong, Y. Fu, F. Wu, JS. Speck, UK. Mishra, M. J. Grundmann, and C. Suh, Advanced Transistor Structures Based on N-face GaN , 2005.
Rajan, S., A. Chini, M. Wong, Y. Fu, F. Wu, JS. Speck, UK. Mishra, M. J. Grundmann, and C. Suh, Advanced Transistor Structures Based on N-face GaN , 2005.
Romanov, AE., P. Waltereit, and JS. Speck, "Buried stressors in nitride semiconductors: Influence on electronic properties", Journal of applied physics, vol. 97, no. 4: AIP, pp. 043708, 2005.
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of planar semipolar gallium nitride films on spinel substrates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L920, 2005.
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates", Japanese Journal of Applied Physics, vol. 44, pp. L920, 2005.
Haskell, BA., TJ. Baker, MB. McLaurin, F. Wu, PT. Fini, SP. DenBaars, JS. Speck, and S. Nakamura, "Defect reduction in (1 1\= 00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy", Applied Physics Letters, vol. 86, no. 11: AIP, pp. 111917, 2005.
Sharma, R., PM. Pattison, H. Masui, RM. Farrell, TJ. Baker, BA. Haskell, F. Wu, SP. DenBaars, JS. Speck, and S. Nakamura, "Demonstration of a semipolar (101¯3¯) In Ga N/ Ga N green light emitting diode", Applied Physics Letters, vol. 87, no. 23: AIP, pp. 231110, 2005.
Poblenz, C., P. Waltereit, S. Rajan, UK. Mishra, JS. Speck, P. Chin, I. Smorchkova, and B. Heying, "Effect of AlN nucleation layer growth conditions on buffer leakage in Al Ga N/ Ga N high electron mobility transistors grown by molecular beam epitaxy (MBE)", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 4: AVS, pp. 1562–1567, 2005.
Heikman, S., S. Keller, S. Newman, Y. Wu, C. Moe, B. Moran, M. Schmidt, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates", Japanese journal of applied physics, vol. 44, no. 3L: IOP Publishing, pp. L405, 2005.
Chini, A., S. Rajan, M. Wong, Y. Fu, JS. Speck, and UK. Mishra, "Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs", Device Research Conference Digest, 2005. DRC'05. 63rd, vol. 1: IEEE, pp. 63–64, 2005.
Hashimoto, T., K. Fujino, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "GaN and Related Alloys", MRS Symposia, vol. 831, Pittsburgh, Materials Research Society, 2005.
Rajan, S., M. Wong, Y. Fu, F. Wu, JS. Speck, and UK. Mishra, "Growth and electrical characterization of N-face AlGaN/GaN heterostructures", Japanese journal of applied physics, vol. 44, no. 11L: IOP Publishing, pp. L1478, 2005.
Rajan, S., M. Wong, Y. Fu, F. Wu, JS. Speck, and UK. Mishra, "Growth and electrical characterization of N-face AlGaN/GaN heterostructures", Japanese journal of applied physics, vol. 44, no. 11L: IOP Publishing, pp. L1478, 2005.
Garrett, GA., H. Shen, M. Wraback, B. Imer, B. Haskell, JS. Speck, S. Keller, S. Nakamura, and SP. DenBaars, "Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN", physica status solidi (a), vol. 202, no. 5: Wiley Online Library, pp. 846–849, 2005.
Hansen, P. J., Y. Terao, Y. Wu, R. A. York, U. K. Mishra, and JS. Speck, "LiNbO 3 thin film growth on (0001)-GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 1: AVS, pp. 162–167, 2005.
Rajan, S., A. Chakraborty, U. K. Mishra, C. Poblenz, P. Waltereit, and J. S. Speck, "MBE-Grown AIGaN/GaN HEMTs on SiC", High Performance Devices, pp. 108–113, 2005.
Keller, S., P. Cantu, C. Moe, Y. Wu, S. Keller, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Metalorganic chemical vapor deposition conditions for efficient silicon doping in high Al-composition AlGaN films", Japanese journal of applied physics, vol. 44, no. 10R: IOP Publishing, pp. 7227, 2005.
Haskell, B. A., A. Chakraborty, F. Wu, H. Sasano, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy", Journal of electronic materials, vol. 34, no. 4: Springer-Verlag, pp. 357–360, 2005.
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L945, 2005.

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