Publications
Found 632 results
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, "Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer", Crystals, vol. 12, pp. 721, 2022.
, "Polarization-Enhanced p-AlGaN Superlattice Optimization for GUV LED", IEEE Journal of Quantum Electronics, vol. 58, pp. 1-9, 2022.
, "Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices", IEEE Journal of Quantum Electronics, vol. 58, pp. 1-11, 2022.
, "Progress of InGaN-Based Red Micro-Light Emitting Diodes", Crystals, vol. 12, pp. 541, 2022.
, "Red InGaN micro-light-emitting diodes (\>620 nm) with a peak external quantum efficiency of 4.5\% using an epitaxial tunnel junction contact", Applied Physics Letters, vol. 120, 03, 2022.
, "Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE", Applied Physics Letters, vol. 121, 09, 2022.
, "Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE", Applied Physics Letters, vol. 121, 09, 2022.
, "Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes", Applied Physics Express, vol. 15, pp. 064003, may, 2022.
, "Vertical hole transport through unipolar InGaN quantum wells and double heterostructures", Phys. Rev. Mater., vol. 6, pp. 044602, Apr, 2022.
, "β-Gallium oxide power electronics", APL Materials, vol. 10, 02, 2022.
, "10.6% external quantum efficiency germicidal UV-LEDs grown on thin highly conductive n-AlGaN", Applied Physics Letters, vol. 123, issue 23, 2023.
, "10.6% external quantum efficiency germicidal UV-LEDs grown on thin highly conductive n-AlGaN", Applied Physics Letters, vol. 123, issue 23, 2023.
, "6.5% external quantum efficiency in V-defect engineered red InGaN LEDs", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
, "6.5% external quantum efficiency in V-defect engineered red InGaN LEDs", Gallium Nitride Materials and Devices XVIII: International Society for Optics and Photonics, 2023.
, "Atomic layer etching (ALE) of III-nitrides", Applied Physics Letters, vol. 123, issue 6, 2023.
, "Atomic layer etching (ALE) of III-nitrides", Applied Physics Letters, vol. 123, issue 6, 2023.
, "Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrodinger equation", Physical Review Applied, vol. 20, issue 4, 2023.
, "Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrodinger equation", Physical Review Applied, vol. 20, issue 4, 2023.
, "Detection of hot electrons originating from an upper valley at 1.7 eV above the Γ valley in wurtzite GaN using electron emission spectroscopy", Phys. Rev. B, vol. 107, pp. 035303, Jan, 2023.
, "Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs", Journal of Luminescence, vol. 257, pp. 119732, 2023.
, "Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs", Applied Physics Letters, vol. 123, issue 20, 2023.
, "First Demonstration of an N-Polar InAlGaN/GaN HEMT", IEEE Electron Device Letters, vol. 45, issue 3, pp. 328-331, 2023.
, "First-Principles Study of Twin Boundaries and Stacking Faults in Beta-Ga2O3", Advanced Materials Interfaces, 2023.
, "High external quantum efficiency (6.5%) InGaN V-defect LEDs to 600 nm and patterned sapphire substrates", Optics Express, vol. 31, issue 25, pp. 41351-41360, 2023.
, "High external quantum efficiency (6.5%) InGaN V-defect LEDs to 600 nm and patterned sapphire substrates", Optics Express, vol. 31, issue 25, pp. 41351-41360, 2023.