Publications

Found 2098 results
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2000
Chavarkar, P., UK. Mishra, SK. Mathis, and JS. Speck, "Effect of Sb composition on lateral oxidation rates in AlAs 1- x Sb x", Applied Physics Letters, vol. 76, no. 10: AIP, pp. 1291–1293, 2000.
Elsass, CR., T. Mates, B. Heying, C. Poblenz, P. Fini, PM. Petroff, SP. DenBaars, and JS. Speck, "Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 20: AIP, pp. 3167–3169, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Electrical transport of an AlGaN/GaN two-dimensional electron gas", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 619–625, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Electrical transport of an AlGaN/GaN two-dimensional electron gas", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 619–625, 2000.
Elsass, C. R., I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, et al., "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
Kawakami, RK., E. Johnston-Halperin, LF. Chen, M. Hanson, N. Guebels, JS. Speck, AC. Gossard, and DD. Awschalom, "(Ga, Mn) As as a digital ferromagnetic heterostructure", Applied Physics Letters, vol. 77, no. 15: AIP, pp. 2379–2381, 2000.
Moran, B., M. Hansen, MD. Craven, JS. Speck, and SP. DenBaars, "Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 301–304, 2000.
McCarthy, L., Y. Smorchkova, P. Fini, H. Xing, M. Rodwell, J. Speck, S. DenBaars, and U. Mishra, "HBT on LEO GaN", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 85–86, 2000.
McCarthy, L., Y. Smorchkova, P. Fini, H. Xing, M. Rodwell, J. Speck, S. DenBaars, and U. Mishra, "HBT on LEO GaN", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 85–86, 2000.
Hierro, A., SA. Ringel, M. Hansen, JS. Speck, UK. Mishra, and SP. DenBaars, "Hydrogen passivation of deep levels in n–GaN", Applied Physics Letters, vol. 77, no. 10: AIP, pp. 1499–1501, 2000.
Hansen, M., P. Fini, L. Zhao, AC. Abare, LA. Coldren, JS. Speck, and SP. DenBaars, "Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Applied Physics Letters, vol. 76, no. 5: AIP, pp. 529–531, 2000.
Hansen, M., P. Fini, L. Zhao, A. Abare, L. A. Coldren, J. S. Speck, and S. P. DenBaars, "Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 8–13, 2000.
Fini, P., A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, MV. Ramana Murty, O. Auciello, L. Zhao, SP. DenBaars, and JS. Speck, "In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN", Applied Physics Letters, vol. 76, no. 26: AIP, pp. 3893–3895, 2000.
Fini, P., A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, MV. Ramana Murty, O. Auciello, L. Zhao, SP. DenBaars, and JS. Speck, "In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN", Applied Physics Letters, vol. 76, no. 26: AIP, pp. 3893–3895, 2000.
Munkholm, A., GB. Stephenson, JA. Eastman, O. Auciello, MV. Ramana Murty, C. Thompson, P. Fini, JS. Speck, and SP. DenBaars, "In situ studies of the effect of silicon on GaN growth modes", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 98–105, 2000.
Munkholm, A., GB. Stephenson, JA. Eastman, O. Auciello, MV. Ramana Murty, C. Thompson, P. Fini, JS. Speck, and SP. DenBaars, "In situ studies of the effect of silicon on GaN growth modes", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 98–105, 2000.
Hansen, M., P. Fini, L. Zhao, AC. Abare, LA. Coldren, JS. Speck, and SP. DenBaars, "LASERS, OPTICS, AND OPTOELECTRONICS-Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Applied Physics Letters, vol. 76, no. 5: New York [etc.] American Institute of Physics., pp. 529–531, 2000.
Munkholm, A., C. Thompson, MV. Ramana Murty, JA. Eastman, O. Auciello, GB. Stephenson, P. Fini, SP. DenBaars, and JS. Speck, "Layer-by-layer growth of GaN induced by silicon", Applied Physics Letters, vol. 77, no. 11: AIP, pp. 1626–1628, 2000.
Munkholm, A., C. Thompson, MV. Ramana Murty, JA. Eastman, O. Auciello, GB. Stephenson, P. Fini, SP. DenBaars, and JS. Speck, "Layer-by-layer growth of GaN induced by silicon", Applied Physics Letters, vol. 77, no. 11: AIP, pp. 1626–1628, 2000.
Fini, P., L. Zhao, J. S. Speck, S. P. DenBaars, A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, RMV. Murty, and O. Auciello, Measurement and minimization of wing tilt in laterally overgrown GaN on a SiO ${$sub 2$}$ mask.: Argonne National Lab., IL (US), 2000.
Fini, P., L. Zhao, J. S. Speck, S. P. DenBaars, A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, RMV. Murty, and O. Auciello, Measurement and minimization of wing tilt in laterally overgrown GaN on a SiO ${$sub 2$}$ mask.: Argonne National Lab., IL (US), 2000.
Smorchkova, IP., E. Haus, B. Heying, P. Kozodoy, P. Fini, JP. Ibbetson, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: AIP, pp. 718–720, 2000.
Smorchkova, IP., E. Haus, B. Heying, P. Kozodoy, P. Fini, JP. Ibbetson, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: AIP, pp. 718–720, 2000.
York, R., A. Nagra, E. Erker, T. Taylor, P. Periaswamy, J. Speck, S. Streiffer, and O. Auciello, "Microwave integrated circuits using thin-film BST", Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on, vol. 1: IEEE, pp. 195–200, 2000.
York, R., A. Nagra, E. Erker, T. Taylor, P. Periaswamy, J. Speck, S. Streiffer, and O. Auciello, "Microwave integrated circuits using thin-film BST", Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on, vol. 1: IEEE, pp. 195–200, 2000.

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