Publications
Found 2098 results
Author Title Type [ Year
] Filters: First Letter Of Last Name is S [Clear All Filters]
, "444.9 nm semipolar (11 2\= 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer", Applied Physics Letters, vol. 100, no. 2: AIP, pp. 021104, 2012.
, "Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs", IEEE Electron Device Letters, vol. 33, no. 5: IEEE, pp. 658–660, 2012.
, "Access-region defect spectroscopy of DC-stressed N-polar GaN MIS-HEMTs", IEEE Electron Device Letters, vol. 33, no. 5: IEEE, pp. 658–660, 2012.
, "Advances in GaN semiconductors for energy efficient solid state lighting", Photonics Conference (IPC), 2012 IEEE: IEEE, pp. 427–428, 2012.
, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, 2012.
, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, 2012.
, "AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy", physica status solidi (a), vol. 209, no. 1: Wiley Online Library, pp. 216–220, 2012.
, "Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure", Applied Physics Letters, vol. 101, no. 8: AIP, pp. 083505, 2012.
, "Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure", Applied Physics Letters, vol. 101, no. 8: AIP, pp. 083505, 2012.
, "Anomalous output conductance in N-polar GaN high electron mobility transistors", IEEE Transactions on Electron Devices, vol. 59, no. 11: IEEE, pp. 2988–2995, 2012.
, "Anomalous output conductance in N-polar GaN high electron mobility transistors", IEEE Transactions on Electron Devices, vol. 59, no. 11: IEEE, pp. 2988–2995, 2012.
, "Anti Reflection (AR) Coating for Indium Gallium Nitride (InGaN) Solar Cells", Army Research Laboratory Report, 08/2012.
, "Anti Reflection (AR) Coating for Indium Gallium Nitride (InGaN) Solar Cells", Army Research Laboratory Report, 08/2012.
, "Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 100, no. 8: AIP, pp. 082103, 2012.
, "Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 9: AIP, pp. 091601, 2012.
, "Atom probe tomography of compound semiconductors for photovoltaic and light-emitting device applications", Microscopy Today, vol. 20, no. 3: Cambridge University Press, pp. 18–24, 2012.
, "Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers", Applied Physics Letters, vol. 101, no. 11: AIP, pp. 112102, 2012.
, "Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers", Applied Physics Letters, vol. 101, pp. 112102, 2012.
, "Capacitance-voltage profiling on polar III-nitride heterostructures", Journal of Applied Physics, vol. 112, no. 8: AIP, pp. 083704, 2012.
, "Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN", physica status solidi (b), vol. 249, no. 3: Wiley Online Library, pp. 507–510, 2012.
, "Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN", physica status solidi (b), vol. 249, no. 3: Wiley Online Library, pp. 507–510, 2012.
, "Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells", Applied Physics Letters, vol. 101, no. 18: AIP, pp. 181105, 2012.
, "Charge and Mobility Enhancements in In-Polar InAl (Ga) N/Al (Ga) N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy", Japanese Journal of Applied Physics, vol. 51, no. 11R: IOP Publishing, pp. 115502, 2012.
, "Chip shaping for light extraction enhancement of bulk c-plane light-emitting diodes", Applied Physics Express, vol. 5, no. 3: IOP Publishing, pp. 032104, 2012.
, "Chip shaping for light extraction enhancement of bulk c-plane light-emitting diodes", Applied Physics Express, vol. 5, no. 3: IOP Publishing, pp. 032104, 2012.