444.9 nm semipolar (11 2\= 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer

Title444.9 nm semipolar (11 2\= 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
Publication TypeJournal Article
Year of Publication2012
AuthorsHsu, P. Shan, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, and others
JournalApplied Physics Letters
Volume100
Pagination021104