Publications
Found 2098 results
Author Title Type [ Year
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, "High performance MBE-grown N-face microwave GaN HEMTs with> 70% PAE", Device Research Conference, 2009. DRC 2009: IEEE, pp. 157–158, 2009.
, "High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation", Applied Physics Letters, vol. 94, no. 18: AIP, pp. 182103, 2009.
, "High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications", Applied Physics Letters, vol. 94, no. 21: AIP, pp. 213512, 2009.
, "High-performance N-face GaN microwave MIS-HEMTs with> 70% power-added efficiency", IEEE Electron Device Letters, vol. 30, no. 8: IEEE, pp. 802–804, 2009.
, "Homoepitaxial growth and characterization of ZnO (0001) thin films grown by metalorganic chemical vapor epitaxy", physica status solidi (c), vol. 6, no. 6: Wiley Online Library, pp. 1460–1463, 2009.
, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: AIP, pp. 091905, 2009.
, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: American Institute of Physics, pp. 091905–091905, 2009.
, "Investigation of (110) Sn O 2 growth mechanisms on Ti O 2 substrates by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 106, no. 2: AIP, pp. 024911, 2009.
, "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy", Applied Physics Letters, vol. 94, no. 12: AIP, pp. 121906, 2009.
, "List of Committee Members", Journal of Crystal Growth, vol. 311, pp. 2760, 2009.
, "m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching", Applied Physics Express, vol. 2, no. 12: IOP Publishing, pp. 121004, 2009.
, "m-plane pure blue laser diodes with p-GaN", Applied physics letters, vol. 95, no. 8: American Institute of Physics, 2009.
, "m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers", Applied Physics Letters, vol. 95, no. 8: AIP, pp. 081110, 2009.
, "Non-alloyed Schottky and ohmic contacts to as-grown and oxygen-plasma treated n-type SnO2 (110) and (101) thin films", Applied Physics Express, vol. 2, no. 10: IOP Publishing, pp. 106502, 2009.
, "Nonpolar and semipolar group III nitride-based materials", MRS bulletin, vol. 34, no. 5: Cambridge University Press, pp. 304–312, 2009.
, "N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art f T. L G product of 16.8 GHz-μm", Electron Devices Meeting (IEDM), 2009 IEEE International: IEEE, pp. 1–3, 2009.
, "Observation of clamping of photoluminescence intensities from nonlinear degenerate electron gas in InN", International Quantum Electronics Conference: Optical Society of America, pp. IMH6, 2009.
, "Observation of clamping of photoluminescence intensities from nonlinear degenerate electron gas in InN", International Quantum Electronics Conference: Optical Society of America, pp. IMH6, 2009.
, "Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al, In) GaN epitaxial layers grown on semipolar (11 2\= 2) GaN free standing substrates", Applied Physics Letters, vol. 95, no. 25: AIP, pp. 251905, 2009.
, "Piezoelectric Field in Semi-Polar InGaN/GaN Quantum Wells", Meeting Abstracts, no. 21: The Electrochemical Society, pp. 885–885, 2009.
, "Piezoelectric Field in Semi-Polar InGaN/GaN Quantum Wells", Meeting Abstracts, no. 21: The Electrochemical Society, pp. 885–885, 2009.