Publications

Found 14 results
Author Title Type [ Year(Asc)]
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2024
Quevedo, A., F. Wu, T-Y. Tsai, J. J. Ewing, T. Tak, S. Gandrothula, S. Gee, X. Li, S. Nakamura, S. P. DenBaars, et al., "Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes", Applied Physics Letters, vol. 125, issue 4, 07/2024.
Tak, T., A. Quevedo, F. Wu, S. Gandrothula, J. J. Ewing, S. Gee, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs", Applied Physics Letters, vol. 124, issue 17, 04/2024.
Ewing, J. J., F. Wu, A. Quevedo, T. Tak, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation", Physical Review Applied, vol. 21, issue 6, 06/2024.
2023
Ho, W. Ying, Y. Chao Chow, Z. Biegler, K. Shek Qwah, T. Tak, A. Wissel-Garcia, I. Liu, F. Wu, S. Nakamura, and J. S. Speck, "Atomic layer etching (ALE) of III-nitrides", Applied Physics Letters, vol. 123, issue 6, 2023.
Tsai, T-Y., K. Shek Qwah, J-P. Banon, M. Filoche, C. Weisbuch, Y-R. Wu, and J. S. Speck, "Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrodinger equation", Physical Review Applied, vol. 20, issue 4, 2023.
Li, P., H. Li, Y. Yao, K. Shek Qwah, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes", Opt. Express, vol. 31, pp. 7572–7578, Feb, 2023.
2022
Lynsky, C., G. Lheureux, B. Bonef, K. Shek Qwah, R. C. White, S. P. DenBaars, S. Nakamura, Y-R. Wu, C. Weisbuch, and J. S. Speck, "Improved Vertical Carrier Transport for Green III-Nitride LEDs Using $(\mathrmIn,\mathrmGa)\mathrmN$ Alloy Quantum Barriers", Phys. Rev. Appl., vol. 17, pp. 054048, May, 2022.
Qwah, K. Shek, E. Farzana, A. Wissel, M. Monavarian, T. Mates, and J. S. Speck, "Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy", APL Materials, vol. 10, 08, 2022.
Qwah, K. S., M. Monavarian, W. Y. Ho, Y.-R. Wu, and J. S. Speck, "Vertical hole transport through unipolar InGaN quantum wells and double heterostructures", Phys. Rev. Mater., vol. 6, pp. 044602, Apr, 2022.
2020
Farzana, E., J. Wang, M. Monavarian, T. Itoh, K. S. Qwah, Z. J. Biegler, K. F. Jorgensen, and J. S. Speck, "Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy", IEEE Electron Device Letters, vol. 41, pp. 1806-1809, 2020.
Monavarian, M., J. Xu, M. N. Fireman, N. Nookala, F. Wu, B. Bonef, K. S. Qwah, E. C. Young, M. A. Belkin, and J. S. Speck, "Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions", Applied Physics Letters, vol. 116, pp. 201103, 2020.
Qwah, K. S., M. Monavarian, G. Lheureux, J. Wang, Y.-R. Wu, and J. S. Speck, "Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder", Applied Physics Letters, vol. 117, pp. 022107, 2020.
2019
Robertson, C. A., K. S. Qwah, Y.-R. Wu, and J. S. Speck, "Modeling dislocation-related leakage currents in GaN p-n diodes", Journal of Applied Physics, vol. 126, pp. 245705, 2019.
1996
Tarsa, EJ., EA. Hachfeld, FT. Quinlan, JS. Speck, and M. Eddy, "Growth-related stress and surface morphology in homoepitaxial SrTiO3 films", Applied physics letters, vol. 68, no. 4: AIP, pp. 490–492, 1996.