Publications

Found 909 results
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2018
Hahn, W., J-M. Lentali, P. Polovodov, N. Young, J. S. Speck, C. Weisbuch, M. Filoche, F. Maroun, L. Martinelli, Y. Lassailly, et al., "Experimental evidence of nanometer-scale localized recombination due to random In fluctuations in InGaN/GaN quantum wells (Conference Presentation)", Physics and Simulation of Optoelectronic Devices XXVI, vol. 10526: International Society for Optics and Photonics, pp. 105261N, 2018.
Hahn, W., J-M. Lentali, P. Polovodov, N. Young, J. S. Speck, C. Weisbuch, M. Filoche, F. Maroun, L. Martinelli, Y. Lassailly, et al., "Experimental evidence of nanometer-scale localized recombination due to random In fluctuations in InGaN/GaN quantum wells (Conference Presentation)", Physics and Simulation of Optoelectronic Devices XXVI, vol. 10526: International Society for Optics and Photonics, pp. 105261N, 2018.
Malkowski, T. F., J. S. Speck, S. P. DenBaars, and S. Nakamura, "An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures", Journal of Crystal Growth, vol. 499, pp. 85 - 89, 2018.
Griffiths, S., S. Pimputkar, J. Kearns, T.F. Malkowski, M.F. Doherty, J.S. Speck, and S. Nakamura, "Growth kinetics of basic ammonothermal gallium nitride crystals", Journal of Crystal Growth, vol. 501, pp. 74 - 80, 2018.
Fireman, MN., H. Li, S. Keller, U. K. Mishra, and J. S. Speck, "Growth of N-polar GaN by ammonia molecular beam epitaxy", Journal of Crystal Growth, vol. 481: North-Holland, pp. 65–70, 2018.
Kimmel, A.-C.L., T. F. Malkowski, S. Griffiths, B. Hertweck, T. G. Steigerwald, L. P. Freund, S. Neumeier, M. Göken, J. S. Speck, and E. Schluecker, "High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution", Journal of Crystal Growth, vol. 498, pp. 289 - 300, 2018.
Myers, D. J., K. Gelžinytė, W. Ying Ho, J. Iveland, L. Martinelli, J. Peretti, C. Weisbuch, and J. S. Speck, "Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes", Journal of Applied Physics, vol. 124, pp. 055703, 2018.
Myers, D. J., K. Gelžinytė, W. Ying Ho, J. Iveland, L. Martinelli, J. Peretti, C. Weisbuch, and J. S. Speck, "Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes", Journal of Applied Physics, vol. 124, pp. 055703, 2018.
Uždavinys, T. K., D. L. Becerra, M. D. Mensi, R. Ivanov, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320P, 2018.
Uždavinys, T. K., D. L. Becerra, M. D. Mensi, R. Ivanov, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320P, 2018.
Vogt, P., A. Mauze, F. Wu, B. Bonef, and J. S. Speck, "Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(Al x Ga 1− x ) 2 O 3 /β-Ga 2 O 3 heterostructures", Applied Physics Express, vol. 11, pp. 115503, 2018.
Han, S-H., A. Mauze, E. Ahmadi, T. Mates, Y. Oshima, and J. S. Speck, "n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 33, no. 4: IOP Publishing, pp. 045001, 2018.
Han, S-H., A. Mauze, E. Ahmadi, T. Mates, Y. Oshima, and J. S. Speck, "n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 33, no. 4: IOP Publishing, pp. 045001, 2018.
Mounir, C., I. L. Koslow, T. Wernicke, M. Kneissl, L. Y. Kuritzky, N. L. Adamski, S. Ho Oh, C. D. Pynn, S. P. DenBaars, S. Nakamura, et al., "On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯) InGaN/GaN quantum wells", Journal of Applied Physics, vol. 123, no. 8: AIP Publishing, pp. 085705, 2018.
Borgatti, F., JA. Berger, D. Céolin, J. Sky Zhou, J. J. Kas, M. Guzzo, CF. McConville, F. Offi, G. Panaccione, A. Regoutz, et al., "Revisiting the origin of satellites in core-level photoemission of transparent conducting oxides: The case of n-doped SnO 2", Physical Review B, vol. 97, no. 15: American Physical Society, pp. 155102, 2018.
Khoury, M., H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations", Applied Physics Express, vol. 11, no. 3: IOP Publishing, pp. 036501, 2018.
Jr, R. M. Farrell, T. J. Baker, A. Chakraborty, B. A. Haskell, M. P. Pattison, R. Sharma, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga, Al, In, B) N THIN FILMS, HETEROSTRUCTURES, AND DEVICES, 2018.
2017
Megalini, L., B. Cabinian, B. Bonef, H. Zhao, T. Mates, J. Speck, J. Bowers, and J. Klamkin, "1550-nm InGaAsP multi-quantum-well structures in InP nano-ridges by selective MOCVD growth on SOI substrates", Integrated Photonics Research, Silicon and Nanophotonics: Optical Society of America, pp. ITu2A–3, 2017.
Megalini, L., B. Cabinian, B. Bonef, H. Zhao, T. Mates, J. Speck, J. Bowers, and J. Klamkin, "1550-nm InGaAsP multi-quantum-well structures in InP nano-ridges by selective MOCVD growth on SOI substrates", Integrated Photonics Research, Silicon and Nanophotonics: Optical Society of America, pp. ITu2A–3, 2017.
Megalini, L., B. Bonef, B. C. Cabinian, H. Zhao, A. Taylor, J. S. Speck, J. E. Bowers, and J. Klamkin, "1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates", Applied Physics Letters, vol. 111, no. 3: AIP Publishing, pp. 032105, 2017.
Khoury, M., H. Li, L. Y. Kuritzky, A. J. Mughal, P. DeMierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, "444 nm InGaN light emitting diodes on low-defect-density GaN templates on patterned sapphire", Applied Physics Express, vol. 10, no. 10: IOP Publishing, pp. 106501, 2017.
Foronda, H. M., B. Mazumder, E. C. Young, M. A. Laurent, Y. Li, S. P. DenBaars, and J. S. Speck, "Analysis of Vegardís law for lattice matching InxAl1- xN to GaN by metalorganic chemical vapor deposition", Journal of Crystal Growth, vol. 475: North-Holland, pp. 127–135, 2017.
Li, H., B. Mazumder, B. Bonef, S. Keller, S. Wienecke, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Characterization of N-polar AlN in GaN/AlN/(Al, Ga) N heterostructures grown by metal-organic chemical vapor deposition", Semiconductor Science and Technology, vol. 32, no. 11: IOP Publishing, pp. 115004, 2017.
Li, H., B. Mazumder, B. Bonef, S. Keller, S. Wienecke, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Characterization of N-polar AlN in GaN/AlN/(Al, Ga) N heterostructures grown by metal-organic chemical vapor deposition", Semiconductor Science and Technology, vol. 32, no. 11: IOP Publishing, pp. 115004, 2017.
Ahmadi, E., O. S. Koksaldi, X. Zheng, T. Mates, Y. Oshima, U. K. Mishra, and J. S. Speck, "Demonstration of β-(Al x Ga1- x) 2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy", Applied Physics Express, vol. 10, no. 7: IOP Publishing, pp. 071101, 2017.

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