Publications
Found 909 results
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, "Al Ga N/ Ga N metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 5: AVS, pp. 2479–2485, 2004.
, "Analysis of interface electronic structure in In x Ga 1- x N/GaN heterostructures", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 4: AVS, pp. 2169–2174, 2004.
, "Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy", Applied physics letters, vol. 84, no. 4: AIP, pp. 535–537, 2004.
, "Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%", Applied physics letters, vol. 84, no. 15: AIP, pp. 2748–2750, 2004.
, "Carbon doping of GaN with CBr 4 in radio-frequency plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 95, no. 12: AIP, pp. 8456–8462, 2004.
, "Carbon-related Deep States in Compensated n-type and Semi-Insulating GaN: C and their Influence on Yellow Luminescence", MRS Online Proceedings Library Archive, vol. 831: Cambridge University Press, 2004.
, "Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing", Applied physics letters, vol. 85, no. 22: AIP, pp. 5254–5256, 2004.
, "Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing", Applied physics letters, vol. 85, no. 22: AIP, pp. 5254–5256, 2004.
, "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 3: AVS, pp. 1145–1149, 2004.
, "Gallium adsorption onto (1120) gallium nitride surfaces", Journal of applied physics, vol. 96, no. 1: AIP, pp. 327–334, 2004.
, "Growth and fabrication of short-wavelength UV LEDs", Third International Conference on Solid State Lighting, vol. 5187: International Society for Optics and Photonics, pp. 250–260, 2004.
, "Growth and fabrication of short-wavelength UV LEDs", Third International Conference on Solid State Lighting, vol. 5187: International Society for Optics and Photonics, pp. 250–260, 2004.
, "Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 3: AIP, pp. 374–376, 2004.
, "Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 3: AIP, pp. 374–376, 2004.
, "Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs", Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes' Late News Papers' volume]: IEEE, pp. 37–38, 2004.
, "Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs", Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes' Late News Papers' volume]: IEEE, pp. 37–38, 2004.
, Low Noise Amplifiers Based on Lattice Engineered Substrates: DTIC Document, 2004.
, "Measurement of polarization charge and conduction-band offset at In x Ga 1- x N/GaN heterojunction interfaces", Applied physics letters, vol. 84, no. 23: AIP, pp. 4644–4646, 2004.
, "Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 8: AIP, pp. 1281–1283, 2004.
, "MOCVD growth of AlGaN films for solar blind photodetectors", physica status solidi (a), vol. 201, no. 9: Wiley Online Library, pp. 2185–2189, 2004.
, "Nonpolar a-plane p-type GaN and p-n Junction Diodes", Journal of applied physics, vol. 96, no. 8: AIP, pp. 4494–4499, 2004.
, "Nonpolar a-plane p-type GaN and p-n Junction Diodes", Journal of applied physics, vol. 96, no. 8: AIP, pp. 4494–4499, 2004.
, "Nonpolar InGaN/ GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak", Applied Physics Letters, vol. 85, no. 22: AIP, pp. 5143–5145, 2004.
, "Papers from the 31st Conference on the Physics and Chemistry of Semiconductor Interfaces-GaN and Related Materials-Analysis of interface electronic structure in InxGa1-xN/GaN heterostructures", Journal of Vacuum Science and Technology-Section B, vol. 22, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2169–2174, 2004.
, "Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE", IEEE Electron Device Letters, vol. 25, no. 5: IEEE, pp. 247–249, 2004.