Publications
Found 909 results
Author Title Type [ Year
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, "Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures", Materials Science Forum, vol. 353: Trans Tech Publications Ltd., Zurich-Uetikon, Switzerland, pp. 787–790, 2001.
, "GaN HBT: toward an RF device", IEEE Transactions on Electron Devices, vol. 48, no. 3: IEEE, pp. 543–551, 2001.
, "Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 233, no. 4: North-Holland, pp. 709–716, 2001.
, "Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 40, no. 11R: IOP Publishing, pp. 6235, 2001.
, "Investigations of chemical vapor deposition of GaN using synchrotron radiation", Journal of the Electrochemical Society, vol. 148, no. 5: The Electrochemical Society, pp. C390–C394, 2001.
, "Investigations of chemical vapor deposition of GaN using synchrotron radiation", Journal of the Electrochemical Society, vol. 148, no. 5: The Electrochemical Society, pp. C390–C394, 2001.
, "Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP", Journal of Applied Physics, vol. 89, no. 4: AIP, pp. 2458–2464, 2001.
, "Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors", journal of Applied Physics, vol. 89, no. 12: AIP, pp. 7846–7851, 2001.
, "Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors", journal of Applied Physics, vol. 89, no. 12: AIP, pp. 7846–7851, 2001.
, "Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors", journal of Applied Physics, vol. 89, no. 12: AIP, pp. 7846–7851, 2001.
, "Modeling of threading dislocation reduction in growing GaN layers", Journal of crystal growth, vol. 231, no. 3: North-Holland, pp. 371–390, 2001.
, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Two-dimensional electron gas properties-Transport", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 603–606, 2001.
, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part A. 1)-GaN-based transistors-AlGaN/GaN HEMT Optimization", Physica Status Solidi-A-Applied Research, vol. 188, no. 1: Berlin: Akademie-Verlag,[1970]-c2004., pp. 199–202, 2001.
, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Excitons-Radiative and Nonradiative Exciton", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 485–488, 2001.
, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 1)-Point defects and impurities in GaN-Capture Kinetics", Physica Status Solidi-B-Basic Research, vol. 228, no. 1: Berlin: Akademie-Verlag, 1971-, pp. 309–314, 2001.
, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.
, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.
, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.
, "Radiative and nonradiative exciton lifetimes in GaN grown by molecular beam epitaxy", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 485–488, 2001.
, "Transport Properties of Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarisation in AlGaN/GaN Heterostructures", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 603–606, 2001.
, "AlGaN-GaN HEMTs and HBTs for microwave power", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 35–36, 2000.
, "AlGaN-GaN HEMTs and HBTs for microwave power", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 35–36, 2000.
, "Characterization of an AlGaN/GaN two-dimensional electron gas structure", Journal of Applied Physics, vol. 87, no. 1: AIP, pp. 369–374, 2000.
, "Deep levels in n-type Schottky and p+-n homojunction GaN diodes", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 922–928, 2000.
, "Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction", Journal of crystal growth, vol. 209, no. 4: Elsevier, pp. 581–590, 2000.