Publications

Found 909 results
Author Title Type [ Year(Desc)]
Filters: First Letter Of Last Name is M  [Clear All Filters]
2004
P Alejandro, C., S. Keller, T. Li, UK. Mishra, JS. Speck, and SP. DenBaars, "MOCVD growth of AlGaN films for solar blind photodetectors", physica status solidi (a), vol. 201, no. 9: Wiley Online Library, pp. 2185–2189, 2004.
Chakraborty, A., H. Xing, MD. Craven, S. Keller, T. Mates, JS. Speck, SP. DenBaars, and UK. Mishra, "Nonpolar a-plane p-type GaN and p-n Junction Diodes", Journal of applied physics, vol. 96, no. 8: AIP, pp. 4494–4499, 2004.
Chakraborty, A., H. Xing, MD. Craven, S. Keller, T. Mates, JS. Speck, SP. DenBaars, and UK. Mishra, "Nonpolar a-plane p-type GaN and p-n Junction Diodes", Journal of applied physics, vol. 96, no. 8: AIP, pp. 4494–4499, 2004.
Chakraborty, A., BA. Haskell, S. Keller, JS. Speck, SP. DenBaars, S. Nakamura, and UK. Mishra, "Nonpolar InGaN/ GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak", Applied Physics Letters, vol. 85, no. 22: AIP, pp. 5143–5145, 2004.
Zhang, H., EJ. Miller, ET. Yu, C. Poblenz, and JS. Speck, "Papers from the 31st Conference on the Physics and Chemistry of Semiconductor Interfaces-GaN and Related Materials-Analysis of interface electronic structure in InxGa1-xN/GaN heterostructures", Journal of Vacuum Science and Technology-Section B, vol. 22, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2169–2174, 2004.
Rajan, S., P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE", IEEE Electron Device Letters, vol. 25, no. 5: IEEE, pp. 247–249, 2004.
Moran, B., F. Wu, AE. Romanov, UK. Mishra, SP. DenBaars, and JS. Speck, "Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer", Journal of Crystal Growth, vol. 273, no. 1-2: North-Holland, pp. 38–47, 2004.
Moran, B., F. Wu, AE. Romanov, UK. Mishra, SP. DenBaars, and JS. Speck, "Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer", Journal of Crystal Growth, vol. 273, no. 1-2: North-Holland, pp. 38–47, 2004.
Waltereit, P., C. Poblenz, S. Rajan, F. Wu, U. K. Mishra, and J. S. Speck, "Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors", Japanese journal of applied physics, vol. 43, no. 12A: IOP Publishing, pp. L1520, 2004.
2005
Rajan, S., A. Chini, M. Wong, Y. Fu, F. Wu, JS. Speck, UK. Mishra, M. J. Grundmann, and C. Suh, Advanced Transistor Structures Based on N-face GaN , 2005.
Haskell, BA., TJ. Baker, MB. McLaurin, F. Wu, PT. Fini, SP. DenBaars, JS. Speck, and S. Nakamura, "Defect reduction in (1 1\= 00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy", Applied Physics Letters, vol. 86, no. 11: AIP, pp. 111917, 2005.
Sharma, R., PM. Pattison, H. Masui, RM. Farrell, TJ. Baker, BA. Haskell, F. Wu, SP. DenBaars, JS. Speck, and S. Nakamura, "Demonstration of a semipolar (101¯3¯) In Ga N/ Ga N green light emitting diode", Applied Physics Letters, vol. 87, no. 23: AIP, pp. 231110, 2005.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates", Japanese journal of applied physics, vol. 44, no. 1L: IOP Publishing, pp. L173, 2005.
Poblenz, C., P. Waltereit, S. Rajan, UK. Mishra, JS. Speck, P. Chin, I. Smorchkova, and B. Heying, "Effect of AlN nucleation layer growth conditions on buffer leakage in Al Ga N/ Ga N high electron mobility transistors grown by molecular beam epitaxy (MBE)", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 4: AVS, pp. 1562–1567, 2005.
Heikman, S., S. Keller, S. Newman, Y. Wu, C. Moe, B. Moran, M. Schmidt, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates", Japanese journal of applied physics, vol. 44, no. 3L: IOP Publishing, pp. L405, 2005.
Heikman, S., S. Keller, S. Newman, Y. Wu, C. Moe, B. Moran, M. Schmidt, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates", Japanese journal of applied physics, vol. 44, no. 3L: IOP Publishing, pp. L405, 2005.
Heikman, S., S. Keller, S. Newman, Y. Wu, C. Moe, B. Moran, M. Schmidt, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates", Japanese journal of applied physics, vol. 44, no. 3L: IOP Publishing, pp. L405, 2005.
Chini, A., S. Rajan, M. Wong, Y. Fu, JS. Speck, and UK. Mishra, "Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs", Device Research Conference Digest, 2005. DRC'05. 63rd, vol. 1: IEEE, pp. 63–64, 2005.
Rajan, S., M. Wong, Y. Fu, F. Wu, JS. Speck, and UK. Mishra, "Growth and electrical characterization of N-face AlGaN/GaN heterostructures", Japanese journal of applied physics, vol. 44, no. 11L: IOP Publishing, pp. L1478, 2005.
Palacios, T., A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "High-power AlGaN/GaN HEMTs for Ka-band applications", IEEE Electron Device Letters, vol. 26, no. 11: IEEE, pp. 781–783, 2005.
Armstrong, A., AR. Arehart, D. Green, UK. Mishra, JS. Speck, and SA. Ringel, "Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon", Journal of Applied physics, vol. 98, no. 5: AIP, pp. 053704, 2005.
Yu, H., L. McCarthy, S. Rajan, S. Keller, S. DenBaars, J. Speck, and U. Mishra, "Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts", IEEE electron device letters, vol. 26, no. 5: IEEE, pp. 283–285, 2005.
Yu, H., L. McCarthy, S. Rajan, S. Keller, S. DenBaars, J. Speck, and U. Mishra, "Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts", IEEE electron device letters, vol. 26, no. 5: IEEE, pp. 283–285, 2005.
López-Richard, V., AM. Alcalde, SJ. Prado, GE. Marques, B. T. Langdon, Y. Paltiel, N. Snapi, A. Zussman, C. Mar Blanca, V. Julius Cemine, et al., "LASERS, OPTICS, AND OPTOELECTRONICS", Appl. Phys. Lett, vol. 87, no. 23, pp. 234101, 2005.
Hansen, P. J., Y. Terao, Y. Wu, R. A. York, U. K. Mishra, and JS. Speck, "LiNbO 3 thin film growth on (0001)-GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 1: AVS, pp. 162–167, 2005.

Pages