Publications

Found 374 results
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2016
Lee, S., S. Mishkat-Ul-Masabih, J. T. Leonard, D. F. Feezell, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Smooth and selective photo-electrochemical etching of heavily doped GaN: Si using a mode-locked 355 nm microchip laser", Applied Physics Express, vol. 10, no. 1: IOP Publishing, pp. 011001, 2016.
Dreyer, C. E., A. Alkauskas, J. L. Lyons, J. S. Speck, and C. G. Van de Walle, "Sources of Shockley-Read-Hall recombination in III-nitride light emitters", APS Meeting Abstracts, 2016.
Fortunato, E., B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Sabine Bahrs, 2016.
2015
Lee, C., C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. Khee Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, et al., "2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system", Optics express, vol. 23, no. 23: Optical Society of America, pp. 29779–29787, 2015.
Lee, C., C. Zhang, M. Cantore, R. Farrell, S. Ho Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation", Summer Topicals Meeting Series (SUM), 2015: IEEE, pp. 228–229, 2015.
Lee, C., C. Zhang, M. Cantore, R. M. Farrell, S. Ho Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication", Optics express, vol. 23, no. 12: Optical Society of America, pp. 16232–16237, 2015.
Korhonen, E., V. Prozheeva, F. Tuomisto, O. Bierwagen, JS. Speck, ME. White, Z. Galazka, H. Liu, N. Izyumskaya, V. Avrutin, et al., "Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO", Semiconductor Science and Technology, vol. 30, no. 2: IOP Publishing, pp. 024011, 2015.
Nguyen, X. Sang, K. Lin, Z. Zhang, B. McSkimming, AR. Arehart, JS. Speck, SA. Ringel, E. A. Fitzgerald, and SJ. Chua, "Correlation of a generation-recombination center with a deep level trap in GaN", Applied Physics Letters, vol. 106, no. 10: AIP Publishing, pp. 102101, 2015.
Leonard, JT., EC. Young, BP. Yonkee, DA. Cohen, T. Margalith, SP. DenBaars, JS. Speck, and S. Nakamura, "Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact", Applied Physics Letters, vol. 107, no. 9: AIP Publishing, pp. 091105, 2015.
Yonkee, B. P., R. M. Farrell, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Demonstration of low resistance ohmic contacts to p-type (202Ø1Ø) GaN", Semiconductor Science and Technology, vol. 30, no. 7: IOP Publishing, pp. 075007, 2015.
Yeluri, R., J. Lu, C. A. Hurni, D. A. Browne, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction", Applied Physics Letters, vol. 106, no. 18: AIP Publishing, pp. 183502, 2015.
Keller, S., C. Lund, T. Whyland, Y. Hu, C. Neufeld, S. Chan, S. Wienecke, F. Wu, S. Nakamura, J. S. Speck, et al., "InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105020, 2015.
Shen, C., J. Leonard, A. Pourhashemi, H. Oubei, M. Sharizal Alias, T. Khee Ng, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate", Photonics Conference (IPC), 2015: IEEE, pp. 581–582, 2015.
Ahmadi, E., F. Wu, H. Li, S. W. Kaun, M. Tahhan, K. Hestroffer, S. Keller, J. S. Speck, and U. K. Mishra, "N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055012, 2015.
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, T. Margalith, S. Lee, SP. DenBaars, JS. Speck, and S. Nakamura, "Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture", Applied Physics Letters, vol. 107, no. 1: AIP Publishing, pp. 011102, 2015.
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, T. Margalith, S. Lee, SP. DenBaars, JS. Speck, and S. Nakamura, "Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture", Applied Physics Letters, vol. 107, no. 1: AIP Publishing, pp. 011102, 2015.
Hestroffer, K., F. Wu, H. Li, C. Lund, S. Keller, J. S. Speck, and U. K. Mishra, "Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105015, 2015.
Hestroffer, K., F. Wu, H. Li, C. Lund, S. Keller, J. S. Speck, and U. K. Mishra, "Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105015, 2015.
Megalini, L., L. Y. Kuritzky, J. T. Leonard, R. Shenoy, K. Rose, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 066502, 2015.
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, SP. DenBaars, JS. Speck, and S. Nakamura, "Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts", Journal of Applied Physics, vol. 118, no. 14: AIP Publishing, pp. 145304, 2015.
Wu, Y-R., C-K. Wu, C-K. Li, D. A. Browne, and J. S. Speck, "Study of percolation transport in the InGaN/AlGaN LEDs with random alloy fluctuation", Conference on Lasers and Electro-Optics/Pacific Rim: Optical Society of America, pp. 25H2_2, 2015.
2014
Feneberg, M., C. Lidig, K. Lange, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, and R. Goldhahn, "Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 82–86, 2014.
Feneberg, M., C. Lidig, K. Lange, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, and R. Goldhahn, "Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 82–86, 2014.
Mazumder, B., X. Liu, R. Yeluri, F. Wu, U. K. Mishra, and J. S. Speck, "Atom probe tomography studies of Al2O3 gate dielectrics on GaN", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 134101, 2014.
Giddings, AD., TJ. Prosa, A. Merkulov, FA. Stevie, HG. Francois-Saint-Cyr, NG. Young, JS. Speck, and DJ. Larson, "Elemental Quantification and Visualization of GaN Structures using APT and SIMS", Microscopy and Microanalysis, vol. 20, no. S3: Cambridge University Press, pp. 2112–2113, 2014.

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