| Title | Smooth and selective photo-electrochemical etching of heavily doped GaN: Si using a mode-locked 355 nm microchip laser |
| Publication Type | Journal Article |
| Year of Publication | 2016 |
| Authors | Lee, S., S. Mishkat-Ul-Masabih, J. T. Leonard, D. F. Feezell, D. A. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars |
| Journal | Applied Physics Express |
| Volume | 10 |
| Pagination | 011001 |