Publications
Found 696 results
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"Tunnel junction devices with monolithic optically pumped and electrically injected InGaN quantum wells for polarized white light emission", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, may # " 26", 2015.
, , "Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO", Semiconductor Science and Technology, vol. 30, no. 2: IOP Publishing, pp. 024011, 2015.
, "Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells", Applied Physics Letters, vol. 107, no. 10: AIP Publishing, pp. 101104, 2015.
, "Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction", Applied Physics Letters, vol. 106, no. 18: AIP Publishing, pp. 183502, 2015.
, "Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN ìdouble miscutî substrates", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 061002, 2015.
, "Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN ìdouble miscutî substrates", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 061002, 2015.
, "Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN", Applied Physics Letters, vol. 106, no. 22: AIP Publishing, pp. 222103, 2015.
, "Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN", Applied Physics Letters, vol. 106, no. 22: AIP Publishing, pp. 222103, 2015.
, "InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105020, 2015.
, "Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN", MRS Communications, vol. 5, no. 3: Cambridge University Press, pp. 463–473, 2015.
, "Low damage dry etch for III-nitride light emitters", Semiconductor Science and Technology, vol. 30, no. 8: IOP Publishing, pp. 085019, 2015.
, "$ m $-Plane GaN Growth on``Double Miscut''Bulk Substrates for Blue Laser Diode Applications", Bulletin of the American Physical Society, vol. 60: APS, 2015.
, "$ m $-Plane GaN Growth on``Double Miscut''Bulk Substrates for Blue Laser Diode Applications", Bulletin of the American Physical Society, vol. 60: APS, 2015.
, "Molecular beam epitaxy of nitrides for advanced electronic materials", Handbook of Crystal Growth: Thin Films and Epitaxy (Second Edition), pp. 705–754, 2015.
, "N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055012, 2015.
, "N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055012, 2015.
, , "Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 106, no. 2: AIP Publishing, pp. 022104, 2015.
, "Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055010, 2015.
, "Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055010, 2015.
, "Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105015, 2015.
, "Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 066502, 2015.
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