Publications
Found 696 results
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"Absil, P., see Karmarkar, AP, TDMR Sept. 2016 402-412 Ahmed, S., see Kuhns, N., TDMR June 2016 105-111 Akbari, M., Virkki, J., Sydanheimo, L., and Ukkonen, L., Toward Graphene-Based Passive UHF RFID Textile Tags: A Reliability Study; TDMR Sept. 2016 429-4", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 1, 2016.
, "Chlorine-based dry etching of β-Ga2O3", Semiconductor Science and Technology, vol. 31, no. 6: IOP Publishing, pp. 065006, 2016.
, "Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 119, no. 16: AIP Publishing, pp. 165704, 2016.
, "Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 109, no. 2: AIP Publishing, pp. 023511, 2016.
, "Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 109, no. 2: AIP Publishing, pp. 023511, 2016.
, "Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission", Gallium Nitride Materials and Devices XI, vol. 9748: International Society for Optics and Photonics, pp. 97481Z, 2016.
, "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 119, no. 1: AIP Publishing, pp. 015303, 2016.
, "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 119, no. 1: AIP Publishing, pp. 015303, 2016.
, "Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy", Applied Physics Letters, vol. 109, no. 4: AIP Publishing, pp. 041107, 2016.
, "High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy", Journal of Crystal Growth, vol. 454: North-Holland, pp. 164–172, 2016.
, "High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy", Journal of Crystal Growth, vol. 454: North-Holland, pp. 164–172, 2016.
, "High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 3: IEEE, pp. 282–289, 2016.
, "High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 3: IEEE, pp. 282–289, 2016.
, "Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition", Semiconductor Science and Technology, vol. 31, no. 8: IOP Publishing, pp. 085003, 2016.
, "Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN", Journal of Crystal Growth, vol. 456: North-Holland, pp. 43–50, 2016.
, "Intrinsic electronic properties of high-quality wurtzite InN", Physical Review B, vol. 94, no. 24: American Physical Society, pp. 245201, 2016.
, , , "Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2\= 1\=) III-nitride laser diodes with chemically assisted ion beam etched facets", Applied Physics Letters, vol. 108, no. 9: AIP Publishing, pp. 091106, 2016.
, "Measurement of internal loss, injection efficiency, and gain for continuous-wave semipolar (202Ø1Ø) III-nitride laser diodes", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
, "Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades", physica status solidi (b), vol. 253, no. 4, pp. 626–629, 2016.
, "Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016)", physica status solidi (b), vol. 253, no. 4, pp. 792–792, 2016.
, , "Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs", Radiation and Its Effects on Components and Systems (RADECS), 2016 16th European Conference on: IEEE, pp. 1–4, 2016.
, "Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs", Radiation and Its Effects on Components and Systems (RADECS), 2016 16th European Conference on: IEEE, pp. 1–4, 2016.
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