Publications

Found 696 results
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2016
Chen, J., YS. Puzyrev, EX. Zhang, DM. Fleetwood, RD. Schrimpf, AR. Arehart, SA. Ringel, SW. Kaun, ECH. Kyle, JS. Speck, et al., "Absil, P., see Karmarkar, AP, TDMR Sept. 2016 402-412 Ahmed, S., see Kuhns, N., TDMR June 2016 105-111 Akbari, M., Virkki, J., Sydanheimo, L., and Ukkonen, L., Toward Graphene-Based Passive UHF RFID Textile Tags: A Reliability Study; TDMR Sept. 2016 429-4", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 1, 2016.
Hogan, J. E., S. W. Kaun, E. Ahmadi, Y. Oshima, and J. S. Speck, "Chlorine-based dry etching of β-Ga2O3", Semiconductor Science and Technology, vol. 31, no. 6: IOP Publishing, pp. 065006, 2016.
Zhang, Z., D. Cardwell, A. Sasikumar, ECH. Kyle, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, AR. Arehart, et al., "Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 119, no. 16: AIP Publishing, pp. 165704, 2016.
Jiang, R., X. Shen, J. Chen, GX. Duan, EX. Zhang, DM. Fleetwood, RD. Schrimpf, SW. Kaun, ECH. Kyle, JS. Speck, et al., "Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 109, no. 2: AIP Publishing, pp. 023511, 2016.
Jiang, R., X. Shen, J. Chen, GX. Duan, EX. Zhang, DM. Fleetwood, RD. Schrimpf, SW. Kaun, ECH. Kyle, JS. Speck, et al., "Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 109, no. 2: AIP Publishing, pp. 023511, 2016.
Kowsz, S. J., C. D. Pynn, F. Wu, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission", Gallium Nitride Materials and Devices XI, vol. 9748: International Society for Optics and Photonics, pp. 97481Z, 2016.
Liu, X., CM. Jackson, F. Wu, B. Mazumder, R. Yeluri, J. Kim, S. Keller, AR. Arehart, SA. Ringel, JS. Speck, et al., "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 119, no. 1: AIP Publishing, pp. 015303, 2016.
Liu, X., CM. Jackson, F. Wu, B. Mazumder, R. Yeluri, J. Kim, S. Keller, AR. Arehart, SA. Ringel, JS. Speck, et al., "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 119, no. 1: AIP Publishing, pp. 015303, 2016.
Pynn, CD., SJ. Kowsz, SH. Oh, H. Gardner, RM. Farrell, S. Nakamura, JS. Speck, and SP. DenBaars, "Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy", Applied Physics Letters, vol. 109, no. 4: AIP Publishing, pp. 041107, 2016.
Kyle, E. C. H., S. W. Kaun, F. Wu, B. Bonef, and J. S. Speck, "High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy", Journal of Crystal Growth, vol. 454: North-Holland, pp. 164–172, 2016.
Kyle, E. C. H., S. W. Kaun, F. Wu, B. Bonef, and J. S. Speck, "High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy", Journal of Crystal Growth, vol. 454: North-Holland, pp. 164–172, 2016.
Chen, J., Y. S. Puzyrev, E. Xia Zhang, D. M. Fleetwood, R. D. Schrimpf, A. R. Arehart, S. A. Ringel, S. W. Kaun, E. C. H. Kyle, J. S. Speck, et al., "High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 3: IEEE, pp. 282–289, 2016.
Chen, J., Y. S. Puzyrev, E. Xia Zhang, D. M. Fleetwood, R. D. Schrimpf, A. R. Arehart, S. A. Ringel, S. W. Kaun, E. C. H. Kyle, J. S. Speck, et al., "High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 3: IEEE, pp. 282–289, 2016.
Foronda, H. M., M. A. Laurent, B. Yonkee, S. Keller, S. P. DenBaars, and J. S. Speck, "Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition", Semiconductor Science and Technology, vol. 31, no. 8: IOP Publishing, pp. 085003, 2016.
Sintonen, S., P. Kivisaari, S. Pimputkar, S. Suihkonen, T. Schulz, J. S. Speck, and S. Nakamura, "Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN", Journal of Crystal Growth, vol. 456: North-Holland, pp. 43–50, 2016.
Eisele, H., J. Schuppang, M. Schnedler, M. Duchamp, C. Nenstiel, V. Portz, T. Kure, M. Bügler, A. Lenz, M. Dähne, et al., "Intrinsic electronic properties of high-quality wurtzite InN", Physical Review B, vol. 94, no. 24: American Physical Society, pp. 245201, 2016.
Lee, C. Hoon, J. S. Speck, H. San Kim, J. Jo Kim, S. Han Kim, and J. Ho Lee, Light emitting device for AC power operation, 2016.
Lee, C. Hoon, J. S. Speck, H. San Kim, J. Jo Kim, S. Han Kim, and J. Ho Lee, Light emitting device for AC power operation, 2016.
Becerra, D. L., L. Y. Kuritzky, J. Nedy, A. Saud Abbas, A. Pourhashemi, R. M. Farrell, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2\= 1\=) III-nitride laser diodes with chemically assisted ion beam etched facets", Applied Physics Letters, vol. 108, no. 9: AIP Publishing, pp. 091106, 2016.
Becerra, D., L. Kuritzky, J. Nedy, A. Abbas, A. Pourhashemi, R. Farrell, D. Cohen, S. DenBaars, J. Speck, and S. Nakamura, "Measurement of internal loss, injection efficiency, and gain for continuous-wave semipolar (202Ø1Ø) III-nitride laser diodes", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Hestroffer, K., C. Lund, H. Li, S. Keller, J. S. Speck, and U. K. Mishra, "Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades", physica status solidi (b), vol. 253, no. 4, pp. 626–629, 2016.
Hestroffer, K., C. Lund, H. Li, S. Keller, J. S. Speck, and U. K. Mishra, "Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016)", physica status solidi (b), vol. 253, no. 4, pp. 792–792, 2016.
Fortunato, E., B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Sabine Bahrs, 2016.
Jiang, R., E. Xia Zhang, X. Shen, J. Chen, K. Ni, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, et al., "Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs", Radiation and Its Effects on Components and Systems (RADECS), 2016 16th European Conference on: IEEE, pp. 1–4, 2016.
Jiang, R., E. Xia Zhang, X. Shen, J. Chen, K. Ni, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, et al., "Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs", Radiation and Its Effects on Components and Systems (RADECS), 2016 16th European Conference on: IEEE, pp. 1–4, 2016.

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