| Title | High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs |
| Publication Type | Journal Article |
| Year of Publication | 2016 |
| Authors | Chen, J., Y. S. Puzyrev, E. Xia Zhang, D. M. Fleetwood, R. D. Schrimpf, A. R. Arehart, S. A. Ringel, S. W. Kaun, E. C. H. Kyle, J. S. Speck, and others |
| Journal | IEEE Transactions on Device and Materials Reliability |
| Volume | 16 |
| Pagination | 282–289 |