Publications
Found 696 results
Author Title Type [ Year
] Filters: First Letter Of Last Name is K [Clear All Filters]
, "N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 189–192, 2010.
, "Nitride semiconductors as terahertz sources based on spontaneous and piezoelectric polarization", physica status solidi (c), vol. 7, no. 10: Wiley Online Library, pp. 2455–2458, 2010.
, "N-polar GaN/AlN MIS-HEMT for Ka-band power applications", IEEE Electron Device Letters, vol. 31, no. 12: IEEE, pp. 1437–1439, 2010.
, "N-polar GaN-based MIS-HEMTs for mixed signal applications", Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International: IEEE, pp. 1130–1133, 2010.
, "Optical anisotropy of A-and M-plane InN grown on free-standing GaN substrates", physica status solidi (a), vol. 207, no. 5: Wiley Online Library, pp. 1062–1065, 2010.
, "Optical anisotropy of A-and M-plane InN grown on free-standing GaN substrates", physica status solidi (a), vol. 207, no. 5: Wiley Online Library, pp. 1062–1065, 2010.
, "Optical anisotropy of a-and m-plane InN grown on free-standing GaN substrates", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010.
, "Optical anisotropy of a-and m-plane InN grown on free-standing GaN substrates", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010.
, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2010.
, "Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231907, 2010.
, "Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition", Applied Physics Letters, vol. 97, no. 14: AIP, pp. 142109, 2010.
, "State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Laser Technology for Defense and Security VI, vol. 7686: International Society for Optics and Photonics, pp. 76860L, 2010.
, "Surface, bulk, and interface electronic properties of nonpolar InN", Applied Physics Letters, vol. 97, no. 11: AIP, pp. 112103, 2010.
, "Surface, bulk, and interface electronic properties of nonpolar InN", Applied Physics Letters, vol. 97, no. 11: AIP, pp. 112103, 2010.
, "Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field", Applied Physics Express, vol. 3, pp. 092201, 2010.
, "T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art f MAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs", Device Research Conference (DRC), 2010: IEEE, pp. 155–156, 2010.
, "Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth", Applied physics letters, vol. 96, no. 14: AIP, pp. 143504, 2010.
, "Ultra-low ohmic contacts to N-polar GaN HEMTs by In (Ga) N based source-drain regrowth by Plasma MBE", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 111–114, 2010.
, "Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source", Microwave Measurement Symposium, 2009 74th ARFTG: IEEE, pp. 1–5, 2009.
, "AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm", Applied Physics Express, vol. 3, no. 1: IOP Publishing, pp. 011002, 2009.
, "Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate", Applied physics express, vol. 2, no. 8: IOP Publishing, pp. 082102, 2009.
, "Characterization of blue-green m-plane InGaN light emitting diodes", Applied Physics Letters, vol. 94, no. 26: AIP, pp. 261108, 2009.