Publications

Found 631 results
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2005
Hansen, P. J., Y. Terao, Y. Wu, R. A. York, U. K. Mishra, and JS. Speck, "LiNbO 3 thin film growth on (0001)-GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 1: AVS, pp. 162–167, 2005.
Onuma, T., A. Chakraborty, BA. Haskell, S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, UK. Mishra, T. Sota, and SF. Chichibu, "Localized exciton dynamics in nonpolar (11 2\= 0) In x Ga 1- x N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Applied Physics Letters, vol. 86, no. 15: AIP, pp. 151918, 2005.
Murai, A., C. Kruse, K. Samonji, L. McCarthy, J. S. Speck, U. K. Mishra, S. P. DenBaars, and D. Hommel, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L958, 2005.
Murai, A., C. Kruse, K. Samonji, L. McCarthy, J. S. Speck, U. K. Mishra, S. P. DenBaars, and D. Hommel, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese Journal of Applied Physics, vol. 44, pp. L958, 2005.
Haskell, B. A., A. Chakraborty, F. Wu, H. Sasano, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy", Journal of electronic materials, vol. 34, no. 4: Springer-Verlag, pp. 357–360, 2005.
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L945, 2005.
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. Denbaars>, S. Nakamura, and U. K. Mishra, "Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates", Japanese Journal of Applied Physics, vol. 44, pp. L945, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.
Masui, H., A. Chakraborty, B. A. Haskell, U. K. Mishra, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate", Japanese journal of applied physics, vol. 44, no. 10L: IOP Publishing, pp. L1329, 2005.
Chakraborty, A., S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Properties of nonpolar a-plane InGaN/ GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN", Applied Physics Letters, vol. 86, no. 3: AIP, pp. 031901, 2005.
Chichibu, SF., T. Koida, MD. Craven, BA. Haskell, T. Onuma, T. Sota, JS. Speck, SP. DenBaars, and S. Nakamura, "Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr; 0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique", physica status solidi (c), vol. 2, no. 7: WILEY-VCH Verlag, pp. 2700–2703, 2005.
Hansen, PJ., V. Vaithyanathan, Y. Wu, T. Mates, S. Heikman, UK. Mishra, RA. York, DG. Schlom, and JS. Speck, "Rutile films grown by molecular beam epitaxy on GaN and Al Ga N/ Ga N", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 2: AVS, pp. 499–506, 2005.
Hansen, PJ., V. Vaithyanathan, Y. Wu, T. Mates, S. Heikman, UK. Mishra, RA. York, DG. Schlom, and JS. Speck, "Rutile films grown by molecular beam epitaxy on GaN and Al Ga N/ Ga N", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 2: AVS, pp. 499–506, 2005.
Ueda, O., H. Amano, S. Fujita, K. Kishino, K. Hiramatsu, M. Kawasaki, S. Chichibu, S. Niki, H. Hirayama, J. Speck, et al., Selected topics in applied physics III-Physics of UV materials and devices and their applications: JAPAN SOC APPLIED PHYSICS KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, 102-0073, JAPAN, 2005.
Ueda, O., H. Amano, S. Fujita, K. Kishino, K. Hiramatsu, M. Kawasaki, S. Chichibu, S. Niki, H. Hirayama, J. Speck, et al., Selected topics in applied physics III-Physics of UV materials and devices and their applications: JAPAN SOC APPLIED PHYSICS KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, 102-0073, JAPAN, 2005.
Sharma, R., M. P Pattison, T. J. Baker, B. A. Haskell, R. M. Farrell, H. Masui, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "A semipolar (10-1-3) InGaN/GaN green light emitting diode", MRS Online Proceedings Library Archive, vol. 892: Cambridge University Press, 2005.
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia", Japanese journal of applied physics, vol. 44, no. 6L: IOP Publishing, pp. L797, 2005.
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia", Japanese journal of applied physics, vol. 44, no. 6L: IOP Publishing, pp. L797, 2005.
Rudin, S., GA. Garrett, H. Shen, M. Wraback, B. Imer, B. Haskell, JS. Speck, S. Keller, S. Nakamura, and SP. DenBaars, "Temperature-dependent Radiative Lifetimes of Excitons in Non-polar GaN/AlGaN Quantum Wells", Semiconductor Device Research Symposium, 2005 International: IEEE, pp. 225–226, 2005.
2004
Hansen, PJ., L. Shen, Y. Wu, A. Stonas, Y. Terao, S. Heikman, D. Buttari, TR. Taylor, SP. DenBaars, UK. Mishra, et al., "Al Ga N/ Ga N metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 5: AVS, pp. 2479–2485, 2004.
Hansen, PJ., L. Shen, Y. Wu, A. Stonas, Y. Terao, S. Heikman, D. Buttari, TR. Taylor, SP. DenBaars, UK. Mishra, et al., "Al Ga N/ Ga N metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 5: AVS, pp. 2479–2485, 2004.
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia", MRS Online Proceedings Library Archive, vol. 831: Cambridge University Press, 2004.
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia", MRS Online Proceedings Library Archive, vol. 831: Cambridge University Press, 2004.
Gao, Y., MD. Craven, JS. Speck, SP. Den Baars, and EL. Hu, "Dislocation-and crystallographic-dependent photoelectrochemical wet etching of gallium nitride", Applied physics letters, vol. 84, no. 17: AIP, pp. 3322–3324, 2004.
Poblenz, C., P. Waltereit, S. Rajan, S. Heikman, UK. Mishra, and JS. Speck, "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 3: AVS, pp. 1145–1149, 2004.

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