Publications

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2008
Hashimoto, T., F. Wu, J. S. Speck, and S. Nakamura, "Ammonothermal growth of bulk GaN", Journal of Crystal Growth, vol. 310, no. 17: Elsevier, pp. 3907–3910, 2008.
McLaurin, M. B., A. Hirai, E. Young, F. Wu, and J. S. Speck, "Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN", Japanese Journal of Applied Physics, vol. 47, no. 7R: IOP Publishing, pp. 5429, 2008.
Sato, H., H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The Blue Laser Diode'The Blue Laser Diode', 1997", Journal of light and visual environment, vol. 32, no. 2, pp. 107–110, 2008.
Law, JJM., ET. Yu, BA. Haskell, PT. Fini, S. Nakamura, JS. Speck, and SP. DenBaars, "Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy", Journal of Applied Physics, vol. 103, no. 1: AIP, pp. 014305, 2008.
Yamada, H., K. Iso, M. Saito, H. Hirasawa, N. Fellows, H. Masui, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates", physica status solidi (RRL)-Rapid Research Letters, vol. 2, no. 2: Wiley Online Library, pp. 89–91, 2008.
Kim, K. Choong, M. C. Schmidt, F. Wu, A. Hirai, M. B. McLaurin, S. P. DenBaars, S. Nakamura, and J. S. Speck, CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B) N ON VARIOUS SUBSTRATES, 2008.
Hol\`y, V., T. Baumbach, D. Lübbert, L. Helfen, M. Ellyan, P. Mikulík, S. Keller, SP. DenBaars, and J. Speck, "Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis", Physical Review B, vol. 77, no. 9: American Physical Society, pp. 094102, 2008.
Hol\`y, V., T. Baumbach, D. Lübbert, L. Helfen, M. Ellyan, P. Mikulík, S. Keller, SP. DenBaars, and J. Speck, "Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis", Physical Review B, vol. 77, no. 9: American Physical Society, pp. 094102, 2008.
McGroddy, K., A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, JS. Speck, C. Weisbuch, and EL. Hu, "Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes", Applied physics letters, vol. 93, no. 10: AIP, pp. 103502, 2008.
Imer, B., B. Haskell, S. Rajan, S. Keller, U. K. Mishra, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Electrical characterization of low defect density nonpolar (11\= 2 0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)", Journal of Materials Research, vol. 23, no. 2: Cambridge University Press, pp. 551–555, 2008.
Metcalfe, G. D., H. Shen, M. Wraback, A. Hirai, F. Wu, and J. S. Speck, "Enhanced terahertz radiation from high stacking fault density nonpolar GaN", Applied Physics Letters, vol. 92, no. 24: AIP, pp. 241106, 2008.
Sato, H., H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High power and high efficiency semipolar InGaN light emitting diodes", Journal of Light & Visual Environment, vol. 32, no. 2: The Illuminating Engineering Institute of Japan, pp. 107–110, 2008.
Imer, B., M. Schmidt, B. Haskell, S. Rajan, B. Zhong, K. Kim, F. Wu, T. Mates, S. Keller, U. K. Mishra, et al., "Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)", physica status solidi (a), vol. 205, no. 7: WILEY-VCH Verlag, pp. 1705–1712, 2008.
Kim, K-C., M. C. Schmidt, F. Wu, M. B. McLaurin, A. Hirai, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth", Applied Physics Letters, vol. 93, no. 14: AIP, pp. 142108, 2008.
Choi, Y-S., M. Iza, G. Koblmüller, C. Hurni, J. S. Speck, C. Weisbuch, and E. L. Hu, "Microcavity InGaN light emitting diodes with a single Fabry-Pérot mode", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 2306–2308, 2008.
Choi, Y-S., M. Iza, G. Koblmüller, C. Hurni, J. S. Speck, C. Weisbuch, and E. L. Hu, "Microcavity InGaN light emitting diodes with a single Fabry-Pérot mode", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 2306–2308, 2008.
Lübbert, D., T. Baumbach, V. Hol\`y, P. Mikulík, L. Helfen, P. Pernot, M. Elyyan, S. Keller, TM. Katona, SP. DenBaars, et al., "Microdiffraction imaging of dislocation densities in microstructured samples", EPL (Europhysics Letters), vol. 82, no. 5: IOP Publishing, pp. 56002, 2008.
Lübbert, D., T. Baumbach, V. Hol\`y, P. Mikulík, L. Helfen, P. Pernot, M. Elyyan, S. Keller, TM. Katona, SP. DenBaars, et al., "Microdiffraction imaging of dislocation densities in microstructured samples", EPL (Europhysics Letters), vol. 82, no. 5: IOP Publishing, pp. 56002, 2008.
Koblmüller, G., A. Hirai, F. Wu, CS. Gallinat, GD. Metcalfe, H. Shen, M. Wraback, and JS. Speck, "Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN", Applied Physics Letters, vol. 93, no. 17: AIP, pp. 171902, 2008.
Wraback, M., GA. Garrett, GD. Metcalfe, H. Shen, MC. Schmidt, A. Hirai, JS. Speck, SP. DenBaars, and S. Nakamura, Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications: DTIC Document, 2008.
Masui, H., H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope", physica status solidi (a), vol. 205, no. 5: Wiley Online Library, pp. 1203–1206, 2008.
Sato, H., R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, et al., "Optical properties of yellow light-emitting diodes grown on semipolar (11 2 2) bulk GaN substrates", Applied Physics Letters, vol. 92, no. 22: AIP, pp. 221110, 2008.

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