Publications
Found 252 results
Author Title Type [ Year
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"Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy", Journal of Applied Physics, vol. 109, no. 10: AIP, pp. 103522, 2011.
, "Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires", Applied Physics Letters, vol. 98, no. 11: AIP, pp. 113113, 2011.
, "Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN", Physical Review B, vol. 84, no. 7: APS, pp. 075315, 2011.
, "Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 22: AIP, pp. 223501, 2011.
, "Integrated non-III-nitride/III-nitride tandem solar cell", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 265–266, 2011.
, "Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 22: AIP, pp. 223506, 2011.
, Stefan Hildebrandt Ingeborg Stass: Wiley Online Library, 2011.
, Stefan Hildebrandt Ingeborg Stass: Wiley Online Library, 2011.
, Stefan Hildebrandt Ingeborg Stass: Wiley Online Library, 2011.
, Stefan Hildebrandt Ingeborg Stass: Wiley Online Library, 2011.
, "Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
, "Anisotropy of tensile stresses and cracking in nonbasal plane Al x Ga 1- x N/GaN heterostructures", Applied Physics Letters, vol. 96, no. 4: AIP, pp. 041913, 2010.
, "Critical thickness for onset of plastic relaxation in (1122) and (2021) semipolar AlGaN heterostructures", Applied physics express, vol. 3, no. 11: IOP Publishing, pp. 111002, 2010.
, "Evaluation of threading dislocation densities in In-and N-face InN", Journal of Applied Physics, vol. 107, no. 5: AIP, pp. 053517, 2010.
, "Hole transport and photoluminescence in Mg-doped InN", Journal of Applied Physics, vol. 107, no. 11: AIP, pp. 113712, 2010.
, "In vacancies in InN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 97, no. 25: AIP, pp. 251907, 2010.
, "In-vacancies in Si-doped InN", physica status solidi (a), vol. 207, no. 5: WILEY-VCH Verlag, pp. 1083–1086, 2010.
, "Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy", Applied physics express, vol. 3, no. 1: IOP Publishing, pp. 011004, 2010.
, "Nitride semiconductors as terahertz sources based on spontaneous and piezoelectric polarization", physica status solidi (c), vol. 7, no. 10: Wiley Online Library, pp. 2455–2458, 2010.
, "Optical anisotropy of A-and M-plane InN grown on free-standing GaN substrates", physica status solidi (a), vol. 207, no. 5: Wiley Online Library, pp. 1062–1065, 2010.
, "Optical anisotropy of A-and M-plane InN grown on free-standing GaN substrates", physica status solidi (a), vol. 207, no. 5: Wiley Online Library, pp. 1062–1065, 2010.
, "Optical anisotropy of a-and m-plane InN grown on free-standing GaN substrates", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010.
, "Optical anisotropy of a-and m-plane InN grown on free-standing GaN substrates", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010.
, "Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231907, 2010.
, "pn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents", Applied Physics Letters, vol. 97, no. 22: AIP, pp. 222113, 2010.
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