Publications

Found 252 results
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2011
Romanov, A. E., E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy", Journal of Applied Physics, vol. 109, no. 10: AIP, pp. 103522, 2011.
Pfüller, C., O. Brandt, T. Flissikowski, HT. Grahn, T. Ive, JS. Speck, and SP. DenBaars, "Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires", Applied Physics Letters, vol. 98, no. 11: AIP, pp. 113113, 2011.
Miller, N., E. E. Haller, G. Koblmüller, C. Gallinat, J. S. Speck, W. J. Schaff, M. E. Hawkridge, K. Man Yu, and J. W. Ager III, "Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN", Physical Review B, vol. 84, no. 7: APS, pp. 075315, 2011.
Ťapajna, M., SW. Kaun, MH. Wong, F. Gao, T. Palacios, UK. Mishra, JS. Speck, and M. Kuball, "Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 22: AIP, pp. 223501, 2011.
Toledo, N. G., S. C. Cruz, C. J. Neufeld, J. R. Lang, M. A. Scarpulla, T. Buehl, A. C. Gossard, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Integrated non-III-nitride/III-nitride tandem solar cell", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 265–266, 2011.
Gao, F., B. Lu, L. Li, S. Kaun, J. S. Speck, C. V. Thompson, and T. Palacios, "Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 22: AIP, pp. 223506, 2011.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Ingeborg Stass: Wiley Online Library, 2011.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Ingeborg Stass: Wiley Online Library, 2011.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Ingeborg Stass: Wiley Online Library, 2011.
Drabold, D. A., A. L. Efros, E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, A. Hoffmann, A. A. Kaminskii, C-S. Lee, et al., Stefan Hildebrandt Ingeborg Stass: Wiley Online Library, 2011.
Toledo, N., C. Neufeld, M. Scarpulla, T. Buehl, S. Cruz, A. Gossard, S. DenBaars, J. Speck, and U. Mishra, "Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
2010
Young, E. C., A. E. Romanov, C. S. Gallinat, A. Hirai, G. E. Beltz, and J. S. Speck, "Anisotropy of tensile stresses and cracking in nonbasal plane Al x Ga 1- x N/GaN heterostructures", Applied Physics Letters, vol. 96, no. 4: AIP, pp. 041913, 2010.
Young, E. C., C. S. Gallinat, A. E. Romanov, A. Tyagi, F. Wu, and J. S. Speck, "Critical thickness for onset of plastic relaxation in (1122) and (2021) semipolar AlGaN heterostructures", Applied physics express, vol. 3, no. 11: IOP Publishing, pp. 111002, 2010.
Gallinat, CS., G. Koblmüller, F. Wu, and JS. Speck, "Evaluation of threading dislocation densities in In-and N-face InN", Journal of Applied Physics, vol. 107, no. 5: AIP, pp. 053517, 2010.
Miller, N., JW. Ager III, HM. Smith III, MA. Mayer, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, G. Koblmüller, et al., "Hole transport and photoluminescence in Mg-doped InN", Journal of Applied Physics, vol. 107, no. 11: AIP, pp. 113712, 2010.
Reurings, F., F. Tuomisto, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "In vacancies in InN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 97, no. 25: AIP, pp. 251907, 2010.
Rauch, C., F. Reurings, F. Tuomisto, TD. Veal, C. F. McConville, H. Lu, WJ. Schaff, CS. Gallinat, G. Koblmüller, JS. Speck, et al., "In-vacancies in Si-doped InN", physica status solidi (a), vol. 207, no. 5: WILEY-VCH Verlag, pp. 1083–1086, 2010.
Young, E. C., F. Wu, A. E. Romanov, A. Tyagi, C. S. Gallinat, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy", Applied physics express, vol. 3, no. 1: IOP Publishing, pp. 011004, 2010.
Metcalfe, G. D., H. Shen, M. Wraback, A. Hirai, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Nitride semiconductors as terahertz sources based on spontaneous and piezoelectric polarization", physica status solidi (c), vol. 7, no. 10: Wiley Online Library, pp. 2455–2458, 2010.
Schley, P., J. Räthel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Bläsing, A. Krost, G. Koblmüller, JS. Speck, and RDAM. Goldhahn, "Optical anisotropy of A-and M-plane InN grown on free-standing GaN substrates", physica status solidi (a), vol. 207, no. 5: Wiley Online Library, pp. 1062–1065, 2010.
Schley, P., J. Räthel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Bläsing, A. Krost, G. Koblmüller, JS. Speck, and RDAM. Goldhahn, "Optical anisotropy of A-and M-plane InN grown on free-standing GaN substrates", physica status solidi (a), vol. 207, no. 5: Wiley Online Library, pp. 1062–1065, 2010.
Raethel, J., P. Schley, E. Sakalauskas, G. Gobsch, R. Mueller, T. A. Klar, J. Pezoldt, R. Goldhahn, G. Koblmueller, J. S. Speck, et al., "Optical anisotropy of a-and m-plane InN grown on free-standing GaN substrates", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010.
Raethel, J., P. Schley, E. Sakalauskas, G. Gobsch, R. Mueller, T. A. Klar, J. Pezoldt, R. Goldhahn, G. Koblmueller, J. S. Speck, et al., "Optical anisotropy of a-and m-plane InN grown on free-standing GaN substrates", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010.
Farrell, RM., DA. Haeger, X. Chen, CS. Gallinat, RW. Davis, M. Cornish, K. Fujito, S. Keller, SP. DenBaars, S. Nakamura, et al., "Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates", Applied Physics Letters, vol. 96, no. 23: AIP, pp. 231907, 2010.
Hurni, C. A., O. Bierwagen, J. R. Lang, B. M. McSkimming, C. S. Gallinat, E. C. Young, D. A. Browne, U. K. Mishra, and J. S. Speck, "pn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents", Applied Physics Letters, vol. 97, no. 22: AIP, pp. 222113, 2010.

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