Publications

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2012
Haeger, D. A., E. C. Young, R. B. Chung, F. Wu, N. A. Pfaff, M. Tsai, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., "384 nm laser diode grown on a (20 2\= 1) semipolar relaxed AlGaN buffer layer", Applied Physics Letters, vol. 100, no. 16: AIP, pp. 161107, 2012.
Hsu, P. Shan, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, et al., "444.9 nm semipolar (11 2\= 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer", Applied Physics Letters, vol. 100, no. 2: AIP, pp. 021104, 2012.
Hsu, P. Shan, M. T. Hardy, F. Wu, I. Koslow, E. C. Young, A. E. Romanov, K. Fujito, D. F. Feezell, S. P. DenBaars, J. S. Speck, et al., "444.9 nm semipolar (11 2\= 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer", Applied Physics Letters, vol. 100, no. 2: AIP, pp. 021104, 2012.
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, 2012.
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, 2012.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Anti Reflection (AR) Coating for Indium Gallium Nitride (InGaN) Solar Cells", Army Research Laboratory Report, 08/2012.
Hu, Y-L., S. Krämer, P. T. Fini, and J. S. Speck, "Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers", Applied Physics Letters, vol. 101, no. 11: AIP, pp. 112102, 2012.
Hu, Y-L., S. Krämer, P. T. Fini, and J. S. Speck, "Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers", Applied Physics Letters, vol. 101, pp. 112102, 2012.
Lang, J. R., NG. Young, R. M. Farrell, Y-R. Wu, and JS. Speck, "Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells", Applied Physics Letters, vol. 101, no. 18: AIP, pp. 181105, 2012.
Hardy, M. T., P. Shan Hsu, I. L. Koslow, D. Feezell, S. Nakamura, J. S. Speck, and S. DenBaars, "Demonstration of a Relaxed Waveguide Semipolar (202Ø1) InGaN/GaN Laser Diode", CLEO: Science and Innovations: Optical Society of America, pp. CTu2N–2, 2012.
Hardy, M. T., P. S. Hsu, I. Koslow, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode", Lasers and Electro-Optics (CLEO), 2012 Conference on: IEEE, pp. 1–2, 2012.
Holder, C., J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, "Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers", Applied Physics Express, vol. 5, no. 9: IOP Publishing, pp. 092104, 2012.
Toledo, N. G., D. J. Friedman, R. M. Farrell, E. E. Perl, C-T. Lin, J. E. Bowers, J. S. Speck, and U. K. Mishra, "Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices", Journal of Applied Physics, vol. 111, no. 5: AIP, pp. 054503, 2012.
Toledo, N. G., D. J. Friedman, R. M. Farrell, E. E. Perl, C-T. Lin, J. E. Bowers, J. S. Speck, and U. K. Mishra, "Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices", Journal of Applied Physics, vol. 111, no. 5: AIP, pp. 054503, 2012.
Hu, Y-L., R. M. Farrell, C. J. Neufeld, M. Iza, S. C. Cruz, N. Pfaff, D. Simeonov, S. Keller, S. Nakamura, S. P. DenBaars, et al., "Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 100, no. 16: AIP, pp. 161101, 2012.
Fujiwara, T., S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN HFETs with regrown n+-GaN contact layer", physica status solidi (c), vol. 9, no. 3-4: Wiley Online Library, pp. 891–893, 2012.
Hu, Y., S. Kraemer, JS. Speck, and PT. Fini, "HAADF-STEM and TEM Investigation on the Structure of ${$-2110$}$ Prismatic Stacking Faults in a-plane GaN", Microscopy and Microanalysis, vol. 18, no. S2: Cambridge University Press, pp. 1342, 2012.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting", Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE: IEEE, pp. 003076–003079, 2012.
Zhao, Y., S. Tanaka, C-Y. Huang, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, High indium uptake and high polarization ratio for group-iii nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrate, 2012.
Pan, C-C., S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, "High-power, low-efficiency-droop semipolar (2021) single-quantum-well blue light-emitting diodes", Applied Physics Express, vol. 5, no. 6: IOP Publishing, pp. 062103, 2012.
Farrell, R. M., C. J. Neufeld, N. G. Toledo, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. Nakamura, Iii-nitride flip-chip solar cells, jul # " 19", 2012.
Zhao, Y., Q. Yan, C-Y. Huang, S-C. Huang, P. Shan Hsu, S. Tanaka, C-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, et al., "Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells", Applied Physics Letters, vol. 100, no. 20: AIP, pp. 201108, 2012.
Farahani, SK. Vasheghani, TD. Veal, AM. Sanchez, O. Bierwagen, ME. White, S. Gorfman, PA. Thomas, JS. Speck, and CF. McConville, "Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO 2 on sapphire", Physical Review B, vol. 86, no. 24: American Physical Society, pp. 245315, 2012.

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