Publications

Found 548 results
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2015
Zhang, Z., E. Farzana, WY. Sun, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, B. McSkimming, ECH. Kyle, JS. Speck, et al., "Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN", Journal of Applied Physics, vol. 118, no. 15: AIP Publishing, pp. 155701, 2015.
Zhang, Z., E. Farzana, WY. Sun, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, B. McSkimming, ECH. Kyle, JS. Speck, et al., "Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN", Journal of Applied Physics, vol. 118, no. 15: AIP Publishing, pp. 155701, 2015.
2016
Chen, J., YS. Puzyrev, EX. Zhang, DM. Fleetwood, RD. Schrimpf, AR. Arehart, SA. Ringel, SW. Kaun, ECH. Kyle, JS. Speck, et al., "Absil, P., see Karmarkar, AP, TDMR Sept. 2016 402-412 Ahmed, S., see Kuhns, N., TDMR June 2016 105-111 Akbari, M., Virkki, J., Sydanheimo, L., and Ukkonen, L., Toward Graphene-Based Passive UHF RFID Textile Tags: A Reliability Study; TDMR Sept. 2016 429-4", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 1, 2016.
Zhang, Z., D. Cardwell, A. Sasikumar, ECH. Kyle, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, AR. Arehart, et al., "Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 119, no. 16: AIP Publishing, pp. 165704, 2016.
Foronda, H. M., A. E. Romanov, E. C. Young, C. A. Robertson, G. E. Beltz, and J. S. Speck, "Curvature and bow of bulk GaN substrates", Journal of Applied Physics, vol. 120, no. 3: AIP Publishing, pp. 035104, 2016.
Foronda, H. Miguel, A. E. Romanov, E. C. Young, C. A. Robertson, G. E. Beltz, and J. S. Speck, "Curvature of HVPE c-plane grown GaN wafers in the relation to stress gradients caused by inclined threading dislocations", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Jiang, R., X. Shen, J. Chen, GX. Duan, EX. Zhang, DM. Fleetwood, RD. Schrimpf, SW. Kaun, ECH. Kyle, JS. Speck, et al., "Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 109, no. 2: AIP Publishing, pp. 023511, 2016.
Kowsz, S. J., C. D. Pynn, F. Wu, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission", Gallium Nitride Materials and Devices XI, vol. 9748: International Society for Optics and Photonics, pp. 97481Z, 2016.
Hwang, D., B. Yonkee, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Development of c-plane thin-film flip-chip LEDs fabricated by photoelectrochemical (PEC) liftoff", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Lee, C., C. Zhang, D. L. Becerra, S. Lee, C. A. Forman, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, et al., "Dynamic characteristics of 410 nm semipolar (20 2 1) iii-nitride laser diodes with a modulation bandwidth of over 5 ghz", Applied Physics Letters, vol. 109, no. 10: AIP Publishing, pp. 101104, 2016.
Lee, C., C. Zhang, D. L. Becerra, S. Lee, C. A. Forman, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, et al., "Dynamic characteristics of 410 nm semipolar (20 2 1) iii-nitride laser diodes with a modulation bandwidth of over 5 ghz", Applied Physics Letters, vol. 109, no. 10: AIP Publishing, pp. 101104, 2016.
Feneberg, M., J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, and J. S. Speck, "Erratum: Many-electron effects on the dielectric function of cubic In 2 O 3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift [Phys. Rev. B 93, 045203 (2016)]", Physical Review B, vol. 94, no. 23: American Physical Society, pp. 239905, 2016.
Young, NG., RM. Farrell, M. Iza, S. Nakamura, SP. DenBaars, C. Weisbuch, and JS. Speck, "Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications", Journal of Crystal Growth, vol. 455: North-Holland, pp. 105–110, 2016.
Pynn, CD., SJ. Kowsz, SH. Oh, H. Gardner, RM. Farrell, S. Nakamura, JS. Speck, and SP. DenBaars, "Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy", Applied Physics Letters, vol. 109, no. 4: AIP Publishing, pp. 041107, 2016.
Alhassan, A. I., R. M. Farrell, B. Saifaddin, A. Mughal, F. Wu, S. P. DenBaars, S. Nakamura, and J. S. Speck, "High luminous efficacy green light-emitting diodes with AlGaN cap layer", Optics express, vol. 24, no. 16: Optical Society of America, pp. 17868–17873, 2016.
Cantore, M., N. Pfaff, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, "High luminous flux from single crystal phosphor-converted laser-based white lighting system", Optics Express, vol. 24, no. 2: Optical Society of America, pp. A215–A221, 2016.
Pourhashemi, A., R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, High power blue-violet III-nitride semipolar laser diodes, may # " 31", 2016.
Lee, C., C. Zhang, D. Becerra, S. Lee, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 809–810, 2016.
Chen, J., Y. S. Puzyrev, E. Xia Zhang, D. M. Fleetwood, R. D. Schrimpf, A. R. Arehart, S. A. Ringel, S. W. Kaun, E. C. H. Kyle, J. S. Speck, et al., "High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 3: IEEE, pp. 282–289, 2016.
Lee, C., C. Zhang, D. L. Becerra, S. Lee, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "High-speed performance of III-nitride 410 nm ridge laser diode on (202Ø1Ø) plane for visible light communication", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–2, 2016.
Foronda, H. M., M. A. Laurent, B. Yonkee, S. Keller, S. P. DenBaars, and J. S. Speck, "Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition", Semiconductor Science and Technology, vol. 31, no. 8: IOP Publishing, pp. 085003, 2016.
Marcinkevičius, S., T. K. Uždavinys, H. M. Foronda, D. A. Cohen, C. Weisbuch, and J. S. Speck, "Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy", Physical Review B, vol. 94, no. 23: American Physical Society, pp. 235205, 2016.
Fireman, M. N., D. A. Browne, U. K. Mishra, and J. S. Speck, "Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy", Journal of Applied Physics, vol. 119, no. 5: AIP Publishing, pp. 055709, 2016.
Feneberg, M., J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, and J. S. Speck, "Many-electron effects on the dielectric function of cubic In 2 O 3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift", Physical Review B, vol. 93, no. 4: APS, pp. 045203, 2016.
Becerra, D. L., L. Y. Kuritzky, J. Nedy, A. Saud Abbas, A. Pourhashemi, R. M. Farrell, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2\= 1\=) III-nitride laser diodes with chemically assisted ion beam etched facets", Applied Physics Letters, vol. 108, no. 9: AIP Publishing, pp. 091106, 2016.

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